? 2008 ixys corporation, all rights reserved genx3 tm 600v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 64 a i cm t c = 25c, 1ms 400 a ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 100 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g ds100003(06/08) IXGH64N60A3 ixgt64n60a3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 50 a v ge = 0v t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 1.20 1.35 v v ces = 600v i c110 = 64a v ce(sat) 1.35v preliminary technical information to-247 (ixgh) g c e c (tab) to-268 (ixgt) g e c (tab) ultra-lowvsat pt igbts for up to 5 khz switching features z optimized for low conduction losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits
ixys reserves the right to change limits, test conditions and dimensions. IXGH64N60A3 ixgt64n60a3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 40 70 s c ies 4850 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 270 pf c res 66 pf q g 167 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 60 nc t d(on) 26 ns t ri 40 ns e on 1.42 mj t d(off) 268 ns t fi 222 ns e off 3.28 mj t d(on) 25 ns t ri 40 ns e on 2.76 mj t d(off) 415 ns t fi 362 ns e off 6.00 mj r thjc 0.27 c/w r thcs 0.25 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 480v, r g = 3 inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 480v, r g = 3 to-268 (ixgt) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2008 ixys corporation, all rights reserved IXGH64N60A3 ixgt64n60a3 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.2 1.6 2.0 2.4 2.8 3.2 56789101112131415 v ge - volts v ce - volts i c = 100a 50a 25a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXGH64N60A3 ixgt64n60a3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 300v i c = 50a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_64n60a3(75) 7-02-08-b
? 2008 ixys corporation, all rights reserved IXGH64N60A3 ixgt64n60a3 fig. 12. inductive switching energy loss vs. gate resistance 4 5 6 7 8 9 10 11 12 13 14 15 16 0 5 10 15 20 25 30 35 r g - ohms e off - millijoules 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 15. inductive turn-off switching times vs. gate resistance 340 350 360 370 380 390 400 410 0 5 10 15 20 25 30 35 r g - ohms t f - nanoseconds 300 400 500 600 700 800 900 1000 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 100a fig. 14. inductive switching energy loss vs. collector current 0 2 4 6 8 10 12 14 16 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 13. inductive switching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 16 18 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 180 200 220 240 260 280 300 320 340 360 380 400 420 20 30 40 50 60 70 80 90 100 i c - amperes t f - nanoseconds 240 260 280 300 320 340 360 380 400 420 440 460 480 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 200 220 240 260 280 300 320 340 360 380 400 420 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 200 225 250 275 300 325 350 375 400 425 450 475 t d(off) - nanoseconds t f t d(off ) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 100a, 50a
ixys reserves the right to change limits, test conditions and dimensions. IXGH64N60A3 ixgt64n60a3 ixys ref: g_64n60a3(75) 7-02-08-b fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 5 101520253035404550 r g - ohms t r - nanoseconds 0 20 40 60 80 100 120 140 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 120 20 30 40 50 60 70 80 90 100 i c - amperes t r - nanoseconds 22 23 24 25 26 27 28 29 30 31 32 33 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 19. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 20 22 24 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 , v ge = 15v v ce = 480v i c = 50a i c = 100a
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