? 2009 ixys corporation, all rights reserved ds100194(9/09) IXFH340N075T2 ixft340n075t2 trencht2 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c75 v v dgr t j = 25 c to 175 c, r gs = 1m 75 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 340 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 850 a i a t c = 25 c 170 a e as t c = 25 c 960 mj p d t c = 25 c 935 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 75 v v gs(th) v ds = v gs , i d = 3ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 1.5 ma r ds(on) v gs = 10v, i d = 100a, note 1 3.2 m v dss = 75v i d25 = 340a r ds(on) 3.2m features z international standard packages z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic diode z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc/dc converters and off-line ups z primary- side switch z high current switching applications advance technical information g = gate d = drain s = source tab = drain to-247 (ixfh) to-268 (ixft) g s d (tab) s g d (tab) d
ixys reserves the right to change limits, test conditions, and dimensions. IXFH340N075T2 ixft340n075t2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 65 110 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2230 pf c rss 490 pf r gi gate input resistance 1.7 t d(on) 26 ns t r 50 ns t d(off) 60 ns t f 35 ns q g(on) 300 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 68 nc q gd 70 nc r thjc 0.16 c/w r thch to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 340 a i sm repetitive, pulse width limited by t jm 1360 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 75 ns i rm 4.4 a q rm 165 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) i f = 170a, v gs = 0v -di/dt = 100a/ s v r = 37.5v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2009 ixys corporation, all rights reserved IXFH340N075T2 ixft340n075t2 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 4v 5v 6v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v 4 v fig. 4. r ds(on) normalized to i d = 170a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 340a i d = 170a fig. 5. r ds(on) normalized to i d = 170a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 40 80 120 160 200 240 280 320 360 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.00.51.01.52.02.53.03.54.04.5 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 4v 5v 6v
ixys reserves the right to change limits, test conditions, and dimensions. IXFH340N075T2 ixft340n075t2 ixys ref: f_340n075t2(v8)9-15-09 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 37.5v i d = 170a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes 25s 100s 1ms 10ms dc r ds(on) limit t j = 175oc t c = 25oc single pulse external lead current limit 100ms
? 2009 ixys corporation, all rights reserved IXFH340N075T2 ixft340n075t2 fig. 14. resistive turn-on rise time vs. drain current 40 45 50 55 60 65 70 100 110 120 130 140 150 160 170 180 190 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 37.5v fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 123456789101112131415 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc , v gs = 10v v ds = 37.5v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 10 15 20 25 30 35 40 45 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 55 60 65 70 75 80 85 90 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 37.5v i d = 100a, 200a fig. 17. resistive turn-off switching times vs. drain current 20 24 28 32 36 40 44 48 100 110 120 130 140 150 160 170 180 190 200 i d - amperes t f - nanoseconds 50 55 60 65 70 75 80 85 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 37.5v t j = 25oc, 125oc fig. 13. resistive turn-on rise time vs. junction temperature 40 45 50 55 60 65 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 37.5v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 123456789101112131415 r g - ohms t f - nanoseconds 0 40 80 120 160 200 240 280 320 360 400 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc , v gs = 10v v ds = 37.5v i d = 100a i d = 200a
ixys reserves the right to change limits, test conditions, and dimensions. IXFH340N075T2 ixft340n075t2 ixys ref: f_340n075t2(v8)9-15-09 fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance afaf 0.20
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