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| nmos linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. the scanning circuit is made up of n-channel mos transistors, operates at low power consumption and is easy to handle. each photodiode has a large active area, high uv sensitivity yet very low noise, delivering a high s/n even at low light levels. nmos linear image sensors also of fer excellent output linearity and wide dynamic range. the photodiodes of S3902 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 m. the photodiodes of s390 3 series also have a height of 0.5 mm but are arrayed at a spacing of 25 m. the photodiodes are available in 3 different pixel quantities fo r each series: 128 (S3902-128q), 256 (S3902-256q, s3903-256q), 512 (S3902-512q, s3903-512q) and 1024 (s3903-1024q). quartz glass is the standard w indow material. features l wide active area pixel pitch: 50 m (S3902 series) 25 m (s3903 series) pixel height: 0.5 mm l high uv sensitivity with good stability l low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l excellent output linearity and sensitivity spatial uniformity l lower power consumption: 1 mw max. l start pulse and clock pulses are cmos logic compatible applications l multichannel spectrophotometry l image readout system image sensor nmos linear image sensor current output, high uv sensitivity, excellent linearity, low power consumption S3902/s3903 series 0.5 mm 1.0 m 1.0 m 400 m oxidation silicon n type silicon p type silicon S3902 series: a=50 m, b=45 m s3903 series: a=25 m, b=20 m b a kmpdc0020ea figure 1 equivalent circuit vss start st clock clock 1 2 active photodiode saturation control gate saturation control drain dummy diode dummy video active video end of scan degital shift re gister (mos shift re gister) figure 2 active area structure kmpda0107ea ! " # ! $ %&'() *+ $ %&'(, *+ !- . /' !-0 1 nmos linear image sensor S3902/s3903 series 2 3 45'% ,6 45'% )6 45'% 6 45'4% )6 45'4% 6 45'4% '&6 0 3 , ) ) '& % 7 2 4/8 &'/) 4/8 &'/) 0 3 % " 1 ! 4 6 9 6 9 % " 2 4/' 4/ 4/' 4/ !4-: / 3 $ . *+ 45' 45'4 ; / $/ ; / ; / $/ ; / 2 % % '% % % 2 2 % % '/ % % '/ % '<3 7 ''''' ''''' 7 2 % )'' % % )'' % 21 1 1 7 ! & = % '/', '/ % '/'& '/', 21 1 ! & +2 % & % % % : ! & ! > % ,' % % ,' % lx ? 2 ! & 6 % ' % % % + 2 % 3 ! ) @0%%a4%%a4 < !&-./' . /' ! - , )b !)- '<3 1 2 1 > 2 $ . *+ 45' 45'4 ; / $/ ; / ; / $/ ; / c 2 c % &/ ' &/ ' + 7 d d %'%'/&'%'/& c 2 c % &/ ' &/ ' d d % ' % '/& ' % '/& 1 ! 8 % / %4/' %/ / %4/' %/ % % ' % % ' % 1 1 % % % % % 3 3 % % ' % % ' % + 7 12 %''% %''% % e3 3 % % ' % % ' % 12 %''% %''% % 1 7 % '' % % '' % % + 7 f f % 3%' % % 3%' % % = ! 5 3 % '/ % ''' '/ % ''' 7c9 % %% % % %% % 1 1 1 % %% % % % % % : % % % % : + 7 + % % % % : % %% %: % %% %: + % %% %: % % % % : % % % % : 1 + % % % % : !8- 3 3 , !,-3 2 7 3 / 7 3 g e3 %' h 1 21 32 7 3 2 ' / 3 3 8 !5-./' . /' !'-; 1 2+8,,41 / nmos linear image sensor S3902/s3903 series figure 3 dimensional outlines (unit: mm) S3902-128q, s3903-256q S3902-256q, s3903-512q 0.51 25.4 2.54 3.0 31.75 10.4 5.2 0.2 5.2 0.2 3.2 0.3 active area 6.4 0.5 0.25 10.16 1.3 0.2* photosensitive surface * optical distance from the outer surface of the quartz window to the chip surface 0.51 25.4 2.54 3.0 active area 12.8 0.5 6.4 ?0.3 31.75 10.4 5.2 ?0.2 5.2 ?0.2 0.25 10.16 1.3 ?0.2* photosensitive surface * optical distance from the outer surface of the quartz window to the chip surface kmpda0108ea kmpda0109ea S3902-512q, s3903-1024q 0.51 25.4 3.0 40.6 10.4 5.2 ?0.2 5.2 ?0.2 12.8 ?0.3 active area 25.6 0.5 0.25 10.16 1.3 ?0.2 * photosensitive surface * optical distance from the outer surface of the quartz window to the chip surface 2.54 kmpda0110ea nc nc nc nc nc nc nc nc nc nc end of scan 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 2 1 st vss vscg nc vscd vss active video dummy video vsub vss, vsub and nc should be grounded. kmpdc0056ea figure 4 pin connection nmos linear image sensor S3902/s3903 series 0.3 0.2 0.1 0 200 400 600 800 1000 1200 wavelength (nm) photo sensitivity (a/w) (ta=25 ?c) $ = +;# 3 2 ;#2 3 /$2 1 1 i 2 7 3 i 2 1 1 2 22 3 / +;# 3 2 ;#2 3 /$2 i 2 / % + 1 2 1 3 2 21 1 / $2 21 1 1/ 13 /$2 21 1 1/ 1 13 /$2 21 1 i 2 1 / 1 # 1 / + 21 1 21 2 2 11 / 21 1 2 1 1 21 1 2 /"2 2 1 3 1 1 3 1 1/ = 1 # $2 2 2 2 1 1 21 1 7 / $2 21 1 i 2 1 3 % 2 1 1/ % + 12 /$2 21 1 1/ >13 # +;# $2 21 1 '7 ? /$2 2 2 2 2 2 3 2 21 1 11 1/ 0+ % 21 1 1/ 10 5 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 3 10 2 10 1 10 0 output charge (pc) exposure ( lx s) (typ. vb=2 v, v =5 v, light source: 2856 k) s3903 series S3902 series saturation exposure saturation charge kmpdb0149ea figure 5 spectral response (typical example) figure 6 output charge vs. exposure kmpdb0117ea construction of image sensor the nmos image sensor consists of a scanning circuit made up of mos transistors, a photodiode array, and a switching transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip. figure 1 shows the circuit of a nmos linear image sensor. the mos scanning circuit operates at low power consump- tion and generates a scanning pulse train by using a start pulse and 2-phase clock pulses in order to turn on each ad- dress sequentially. each address switch is comprised of an nmos transistor using the photodiode as the source, the video line as the drain and the scanning pulse input section as the gate. the photodiode array operates in charge integration mode so that the output is proportional to the amount of light expo- sure (light intensity integration time). each cell consists of an active photodiode and a dummy photodiode, which are respectively connected to the active video line and the dummy video line via a switching transis- tor. each of the active photodiodes is also connected to the saturation control drain via the saturation control transistor, so that the photodiode blooming can be suppressed by grounding the saturation control gate. applying a pulse sig- nal to the saturation control gate triggers all reset. (see ?aux- iliary functions?.) figure 2 shows the schematic diagram of the photodiode active area. this active area has a pn junction consisting of an n-type diffusion layer formed on a p-type silicon substrate. a signal charge generated by light input accumulates as a capacitive charge in this pn junction. the n-type diffusion layer provides high uv sensitivity but low dark current. nmos linear image sensor S3902/s3903 series driver circuit S3902/s3903 series do not require any dc voltage supply for operation. however, the vss, vsub and all nc terminals must be grounded. a start pulse st and 2-phase clock pulses 1, 2 are needed to drive the shift register. these start and clock pulses are positive going pulses and cmos logic com- patible. the 2-phase clock pulses 1, 2 can be either completely separated or complementary. however, both pulses must not be ? high ? at the same time. a clock pulse space (x 1 and x 2 in figure 7) of a ? rise time/fall time - 20 ? ns or more should be input if the rise and fall times of 1, 2 are longer than 20 ns. the 1 and 2 clock pulses must be held at ? high ? at least 200 ns. since the photodiode signal is obtained at the rise of each 2 pulse, the clock pulse frequency will equal the video data rate. the amplitude of start pulse st is the same as the 1 and 2 pulses. the shift register starts the scanning at the ? high ? level of st, so the start pulse interval determines the length of signal accumulation time. the st pulse must be held ? high ? at least 200 ns and overlap with 2 at least for 200 ns. to operate the shift register correctly, 2 must change from the ? high ? level to the ? low ? level only once during ? high ? level of st. the timing chart for each pulse is shown in figure 7. end of scan the end of scan (eos) signal appears in synchronization with the 2 timing right after the last photodiode is addressed, and the eos terminal should be pulled up at 5 v using a 10 k ? resistor. tvd tpw 1 tpw 2 tpw s st v s (h) v s (l) v 1 (h) v 1 (l) v 2 (h) v 2 (l) 1 2 end of scan st 1 2 tr s tf s tr 1 tf 1 x1 x2 t ov tf 2 tr 2 active video output kmpdc0022ea figure 7 timing chart for driver circuit signal readout circuit there are two methods for reading out the signal from an nmos linear image sensor. one is a current detection method using the load resistance and the other is a current integration method using a charge amplifier. in either readout method, a positive bias must be applied to the video line because photodiode anodes of nmos linear image sensors are set at 0 v (vss). figure 8 shows a typical video bias voltage margin. as the clock pulse amplitude is higher, the video bias volt age can be set larger so the saturation charge can be increased. the rise and fall times of the video output waveform can be shortened if the video bias voltage is reduced while the clock pulse amplitude is still higher. when the amplitude of 1, 2 and st is 5 v, setting the video bias v oltage at 2 v is recommended. to obtain good linearity, using the current integration method is advised. in this method, the integration capacitance is reset to the reference voltage level immediately before each photodiode is addressed and the signal charge is then stored as an integra- tion capacitive charge when the address switch turns on. fig- ures 9 and 10 show a typical current integration circuit and its pulse timing chart. to ensure stable output, the rise of a reset pulse must be delayed at least 50 ns from the fall of 2. hamamatsu provides the following driver circuits and related products (sold separately). kmpdb0043ea figure 8 video bias voltage margin 4 0 6 8 10 45678 10 clock pulse amplitude (v) video bias voltage (v) 2 9 min. video bias range max. recommended bias 1 $ 0/ + : +8,,4 c 2% 1 1 +8,,4j +8,,4 (+, %' +8,,& 1 +8,,&j +8,,& (+, %' +8,,&%' 1 = +8,,&%' (+, %' +, %' + ,) k0+ 2 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 5 hamamatsu photonics k.k. nmos linear image sensor S3902/s3903 series cat. no. kmpd1043e01 oct. 2005 dn : 5@ 1 1 2 st 2 1 vscg vss vsub nc eos eos 10 k +5 v +2 v + + e reset 10 pf op-amp (jfet input) open dummy video active video vscd st 2 1 kmpdc0023ea 50 ns min. st 1, reset 2 kmpdc0024ea anti-blooming function if the incident light intensity is higher than the saturation charge level, even partially, a signal charge in excess of the sa turation charge cannot accumulate in the photodiode. this excessive charge flows out into the video line degrading the signal purity. to avoid this problem and maintain the signal purity, applying the same voltage as the video bias voltage to the saturation contro l drain and grounding the saturation control gate are effective. if the incident light intensity is extremely high, a positive bi as should be applied to the saturation control gate. the larger the voltage applied to the saturation control gate, the higher the functi on for suppressing the excessive saturation charge will be. however, this voltage also lowers the amount of saturation charge, so an optimum bias voltage should be selected. auxiliary functions 1) all reset in normal operation, the accumulated charge in each photodiode is reset when the signal is read out. besides this method that uses the readout line, S3902/s3903 series can reset the photodiode charge by applying a pulse to the saturation control gate. the amplitude of this pulse should be equal to the 1, 2 and st pulses and the pulse width should be longer than 5 s. when the saturation control gate is set at the ? high ? level, all photodiodes are reset to the saturation control drain potential (equal to video bias). conversely, when the saturation control gate is set at the ? low ? level (0 v), the signal charge accumulates in each photodiode without being reset. 2) dummy video S3902/s3903 series have a dummy video line to eliminate spike noise contained in the video output waveform. video signal with lower spike noise can be obtained by differential amplification applied between the active video line and dummy video line outputs. when not needed, leave this unconnected. handling precautions 1) electrostatic countermeasures nmos linear image sensors are designed to resist static electrical charges. however, take sufficient cautions and countermea- sures to prevent damage from static charges when handling the sensors. 2) window if dust or grime sticks to the surface of the light input window, it appears as a black blemish or smear on the image. before u sing the image sensor, the window surface should be cleaned. wipe off the window surface with a soft cloth, cleaning paper or cotton swab slightly moistened with organic solvent such as alcohol, and then lightly blow away with compressed air. do not rub the window with dry cloth or cotton swab as this may generate static electricity. output voltage vout is vout [ v ] = output charge [ c ] 10 10 -12 [ f ] shown in. |
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