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vishay siliconix si4388dy document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? ccfl inverter ? notebook logic dc/dc product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) channel-1 30 0.016 at v gs = 10 v 10.7 8 0.024 at v gs = 4.5 v 8.6 channel-2 30 0.015 at v gs = 10 v 11.3 19 0.017 at v gs = 4.5 v 10.6 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 30 0.43 v at 2.0 a 2.0 d 1 g 1 d 1 s 1 /d 2 g 2 s 1 /d 2 s 2 s 1 /d 2 so-8 5 6 7 8 t op v i e w 2 3 4 1 ordering information: si4388dy-t1-e3 (lead (pb)-free) SI4388DY-T1-GE3 (lead (pb)-free and halogen-free) d 1 g 2 s 2 n-channel 2 mosfet schottky diod e g 1 n-channel 1 mosfet s 1 /d 2 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 112 c/w (channel-1) and 107 c/w (channel-2). absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 12 continuous drain current (t j = 150 c) t c = 25 c i d 10.7 11.3 a t c = 70 c 8.5 - 9 t a = 25 c 8.1 b, c 8.6 b, c t a = 70 c 6.4 b, c 6.9 b, c pulsed drain current (10 s pulse width) i dm 40 40 source-drain current diode current t c = 25 c i s 3.0 3.2 t a = 25 c 1.7 b, c 1.8 b, c pulsed source-drain current i sm 40 40 single pulse avalanche current l = 0.1 mh i as 15 20 single pulse avalanche energy e as 11.2 20 mj maximum power dissipation t c = 25 c p d 3.3 3.5 w t c = 70 c 2.1 2.2 t a = 25 c 1.9 b, c 2.2 b, c t a = 70 c 1.2 b, c 1.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, d t 10 s r thja 54 65 47 60 c/w maximum junction-to-foot (drain) steady state r thjf 32 38 30 35
www.vishay.com 2 document number: 74344 s09-0392-rev. b, 09-mar-09 vishay siliconix si4388dy specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v v gs = 0 v, i d = 1 ma ch-2 30 v ds temperature coefficient v ds /t j i d = 250 a ch-1 27 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch-1 - 6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 3 v ds = v gs , i d = 1 ma ch-2 0.6 1.6 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 a v ds = 0 v, v gs = 12 v ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 0.001 ma v ds = 30 v, v gs = 0 v ch-2 0.22 1 v ds = 30 v, v gs = 0 v, t j = 100 c ch-1 0.025 v ds = 30 v, v gs = 0 v, t j = 100 c ch-2 12 100 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch-1 20 a v ds = 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 8 a ch-1 0.013 0.016 v gs = 10 v, i d = 8 a ch-2 0.0125 0.015 v gs = 4.5 v, i d = 5 a ch-1 0.017 0.024 v gs = 5 v, i d = 5 a ch-2 0.014 0.017 forward transconductance b g fs v ds = 15 v, i d = 8 a ch-1 20 s v ds = 15 v, i d = 8 a ch-2 38 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 946 pf ch-2 2230 output capacitance c oss ch-1 173 ch-2 350 reverse transfer capacitance c rss ch-1 84 ch-2 133 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 5 a ch-1 18 27 nc v ds = 15 v, v gs = 10 v, i d = 5 a ch-2 41 62 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 5 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 5 a ch-1 8 12 ch-2 19 29 gate-source charge q gs ch-1 2.55 ch-2 3.5 gate-drain charge q gd ch-1 2.45 ch-2 3.7 gate resistance r g f = 1 mhz ch-1 2.8 4.2 ch-2 1.8 2.7
document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 3 vishay siliconix si4388dy notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 channel-2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 ch-1 8 15 ns ch-2 7 14 rise time t r ch-1 10 15 ch-2 10 15 turn-off delay time t d(off) ch-1 20 30 ch-2 40 60 fall time t f ch-1 8 15 ch-2 7 14 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 channel-2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 ch-1 13 20 ch-2 14 22 rise time t r ch-1 17 26 ch-2 15 24 turn-off delay time t d(off) ch-1 16 25 ch-2 35 53 fall time t f ch-1 8 15 ch-2 7 14 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 3 a ch-2 3.2 pulse diode forward current a i sm ch-1 40 ch-2 40 body diode voltage v sd i s = 2 a ch-1 0.8 1.1 v i s = 2 a ch-2 0.37 0.43 body diode reverse recovery time t rr channel-1 i f = 1.3 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 2.2 a, di/dt = 100 a/s, t j = 25 c ch-1 29 44 ns ch-2 32 48 body diode reverse recovery charge q rr ch-1 19 29 nc ch-2 21 32 reverse recovery fall time t a ch-1 12 ns ch-2 13 reverse recovery rise time t b ch-1 17 ch-2 19
www.vishay.com 4 document number: 74344 s09-0392-rev. b, 09-mar-09 vishay siliconix si4388dy channel-1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-source voltage (v) v gs = 10 thru 5 v 3 v 4 v ) a ( t n e r r u c n i a r d - i d 0 8 16 24 32 40 i d - drain c u rrent (a) ( e c n a t s i s e r - n o - r ) n o ( s d ) 0.010 0.014 0.01 8 0.022 0.026 0.030 v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 048121620 q g - total gate charge (nc) i d = 5 a ) v ( e g a t l o v e c r u o s - o t - e t a g - v s g v ds = 10 v v ds = 15 v v ds = 20 v transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) 0.0 0.4 0.8 1.2 1.6 2.0 012345 25 c - 55 c t c = 125 c ) a ( t n e r r u c n i a r d - i d c rss v ds - drain-to-source voltage (v) 0 240 480 720 960 1200 0 6 12 18 24 30 c oss c iss ) f p ( e c n a t i c a p a c - c t j - j u nction temperat u re ( c) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d = 8 a r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 10 v v gs = 4.5 v
document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 5 vishay siliconix si4388dy channel-1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.001 10 100 0.0 0.2 0.4 0.6 0.8 25 c 150 c v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 1 0.1 0.01 t j - temperature (c) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient v gs - gate-to-so u rce v oltage ( v ) 0.00 0.02 0.04 0.06 0.0 8 0.10 01234567 8 9 10 i d = 8 a ( e c n a t s i s e r - n o - r ) n o ( s d ) 125 c 25 c 0 20 40 60 8 0 100 120 0.001 1 10 0.01 time (s) ) w ( r e w o p 0.1 safe operating area, junction-to-ambient 100 1 0.1 1 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 10 s t a = 25 c single p u lse 100 s 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 ms 10 ms limited b y r ds(on) * 10
www.vishay.com 6 document number: 74344 s09-0392-rev. b, 09-mar-09 vishay siliconix si4388dy channel-1 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 5 7 10 12 0 255075100125150 i d ) a ( t n e r r u c n i a r d - t c - case temperature (c) power derating, junction-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 255075100125150 t c - case temperature (c) ) w ( n o i t a p i s s i d r e w o p power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 7 vishay siliconix si4388dy channel-1 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 0.1 0.01
www.vishay.com 8 document number: 74344 s09-0392-rev. b, 09-mar-09 vishay siliconix si4388dy channel-2 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-source voltage (v) v gs = 10 thru 3 v 2 v ) a ( t n e r r u c n i a r d - i d 0 8 16 24 32 40 i d - drain c u rrent (a) ( e c n a t s i s e r - n o - r ) n o ( s d ) 0.011 0.012 0.013 0.014 0.015 0.016 v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 9 18 27 36 45 q g - total gate charge (nc) i d = 5 a ) v ( e g a t l o v e c r u o s - o t - e t a g - v s g v ds = 10 v v ds = 15 v v ds = 20 v transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.6 1.2 1.8 2.4 3.0 25 c - 55 c t j = 125 c ) a ( t n e r r u c n i a r d - i d c rss v ds - drain-to-source voltage (v) 0 600 1200 1800 2400 3000 0 6 12 18 24 30 c oss c iss ) f p ( e c n a t i c a p a c - c t j - j u nction temperat u re ( c) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d = 8 a r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 10 v v gs = 4.5 v
document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 9 vishay siliconix si4388dy channel-2 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage reverse current (schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 c 150 c v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 0.1 1.0 10 100 0 25 50 75 100 125 150 24 v 30 v t j - temperature (c) i r ) a ( e s r e v e r - 0.00001 0.0001 0.001 0.01 0.1 1.0 on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient v gs - gate-to-so u rce v oltage ( v ) 0.00 0.02 0.04 0.06 0.0 8 0.10 01234567 8 910 i d = 8 a ( e c n a t s i s e r - n o - r ) n o ( s d ) 125 c 25 c 0 40 8 0 120 160 200 0.001 1 10 0.01 time (s) ) w ( r e w o p 0.1 safe operating area, junction-to-ambient 100 1 0.1 1 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 10 s t a = 25 c single p u lse 100 s 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 ms 10 ms limited b y r ds(on) * 10
www.vishay.com 10 document number: 74344 s09-0392-rev. b, 09-mar-09 vishay siliconix si4388dy channel-2 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 3 5 8 10 13 0 255075100125150 i d ) a ( t n e r r u c n i a r d - t c - case temperature (c) power derating, junction-to-foot 0.0 0.9 1.8 2.7 3.6 4.5 0 255075100125150 t c - case temperature (c) ) w ( n o i t a p i s s i d r e w o p power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
document number: 74344 s09-0392-rev. b, 09-mar-09 www.vishay.com 11 vishay siliconix si4388dy channel-2 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74344. normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 110 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 0.1 0.01
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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