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savantic semiconductor product specification silicon pnp power transistors 2SA1262 d escription with to-220 package complement to type 2sc3179 applications audio and general purpose pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -60 v v ceo collector- emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -4 a i b base current -1 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1262 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ,i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -0.6 v i cbo collector cut-off current v cb =-60v; i e =0 -100 a i ebo emitter cut-off current v eb =-6v; i c =0 -100 a h fe dc current gain i c =-1a ; v ce =-4v 40 f t transition frequency i e =0.2a ; v ce =-12v 15 mhz c ob output capacitance i e =0 ; v cb =-10v ;f=1mhz 90 pf switching times t on turn-on time 0.25 s t s storage time 0.75 s t f fall time i c =-2a ;i b1 =- i b2 =-0.2a r l =10 a ;v cc =-20v 0.25 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1262 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1262

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