document number: 83672 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 639 optocoupler, phototransistor output, high reliability, 5300 v rms sfh615aa, sfh615agb, sfh615agr, sfh 615abm, sfh615abl, sfh615ay, sfh615ab vishay semiconductors description the sfh615xxx features a larg e assortment of current transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal transmission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm lead spacing. creepage and clearance distances of > 8 mm are achieved with option 6. this version complies with 60950 (din vde 0805) for reinforced insulation up to operation voltage of 400 v rms or dc. features ? low ctr degradation ? good ctr linearity depending on forward current ? isolation test voltage, 5300 v rms ? high collector emitter voltage, v ceo = 70 v ? low saturation voltage ? fast switching times ? temperature stable ? low coupling capacitance ? end stackable, 0.100" (2.54 mm) spacing ? high common mode interference immunity (unconnected base) ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179060 1 2 4 3 e c a c order information part remarks sfh615aa ctr 50 to 600 %, dip-4 sfh615ab ctr 80 to 260 %, dip-4 sfh615abl ctr 200 to 600 %, dip-4 sfh615abm ctr 200 to 400 %, dip-4 sfh615agb ctr 100 to 600 %, dip-4 sfh615agr ctr 100 to 300 %, dip-4 sfh615ay ctr 50 to 150 %, dip-4 sfh615aa-x006 ctr 50 to 600 %, dip-4 400 mil (option 6) sfh615aa-x007 ctr 50 to 600 %, smd-4 (option 7) sfh615abm-x006 ctr 200 to 400 %, dip-4 400 mil (option 6) sfh615abm-x007 ctr 200 to 400 %, smd-4 (option 7) sfh615agb-x006 ctr 100 to 600 %, dip-4 400 mil (option 6) sfh615agb-x009 ctr 100 to 600 %, smd-4 (option 9) sfh615agr-x006 ctr 100 to 300 %, dip-4 400 mil (option 6) sfh615agr-x007 ctr 100 to 300 %, smd-4 (option 7) sfh615ay-x006 ctr 50 to 150 %, dip-4 400 mil (option 6) sfh615ay-x008 ctr 50 to 150 %,smd-4 (option 8) sfh615ay-x009 ctr 50 to 150 %,smd-4 (option 9)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83672 640 rev. 1.7, 10-dec-08 sfh615aa, sfh615agb, sfh615agr, sfh615 abm, sfh615abl, sfh615ay, sfh615ab vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v dc forward current i f 60 ma surge forward current t p 10 ms i fsm 2.5 a power dissipation p diss 100 mw output collector emitter voltage v ce 70 v emitter collector voltage v ec 7v collector current i c 50 ma t p 10 ms i c 100 ma total power dissipation p diss 150 mw coupler isolation test voltage between emitter and detector v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c soldering temperature (2) max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 13 pf thermal resistance r thja 750 k/w output collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 5.2 pf thermal resistance r thja 500 k/w collector emitter saturation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.4 pf
document number: 83672 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 641 sfh615aa, sfh615agb, sfh615agr, sfh 615abm, sfh615abl, sfh615ay, sfh615ab optocoupler, phototransistor output, high reliability, 5300 v rms vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - switching operation (with saturation) fig. 2 - current transfer ratio (typ.) vs. temperature coupler collector emitter leakage current v ceo = 10 v sfh615aa i ceo 10 100 na sfh615agb i ceo 10 100 na sfh615agr i ceo 10 100 na sfh615abm i ceo 10 100 na sfh615abl i ceo 10 100 na sfh615ay i ceo 10 100 na sfh615ab i ceo 10 100 na electrical characteristics parameter test condition part symbol min. typ. max. unit current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f i f = 5 ma, v ce = 5 v sfh615aa ctr 50 600 % sfh615agb ctr 100 600 % sfh615agr ctr 100 300 % sfh615abm ctr 200 400 % sfh615abl ctr 200 600 % sfh615ay ctr 50 150 % sfh615ab ctr 80 260 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time i f = 5 ma t on 2s turn-off time i f = 5 ma t off 25 s isfh615aa_01 1k v cc =5 v 47 i f % 10 3 5 10 2 10 1 - 25 75 25 050c 5 t a isfh615aa_02 i f = 10 ma, v cc = 5.0 v 1 2 3 4 i c i f
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83672 642 rev. 1.7, 10-dec-08 sfh615aa, sfh615agb, sfh615agr, sfh615 abm, sfh615abl, sfh615ay, sfh615ab vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms fig. 3 - transistor capacitance (typ .) vs. collector emitter voltage fig. 4 - permissible diode forward current vs. ambient temperature fig. 5 - output characteristic s (typ.) collector current vs. collector emitter voltage fig. 6 - permissible pulse handli ng capability forward current vs. pulse width fig. 7 - diode forward volt age (typ.) vs. forward current fig. 8 - permissible power dissipation vs. temperature 0 5 10 15 20 pf 10 -2 10 -1 10 0 10 1 10 2 v c v e isfh615aa_03 f = 1.0 mhz c ce ma 0 30 60 90 120 0 50 100 75 25 c i f t a isfh615aa_04 ma 30 10 20 0 015 10 5v i c v ce isfh615aa_05 i f = 14 ma i f = 12 ma i f = 10 ma i f = 6 ma i f = 8 ma i f = 4 ma i f = 2 ma i f = 1 ma ma 5 5 10 1 5 10 2 10 3 10 4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s i f t p isfh615aa_06 t p i f t t d = t p d = 0 0.005 0.01 0.02 pulse cycle d = parameter t p i f 0.05 0.1 0.2 0.5 dc 1.2 v 1.1 1.0 0.9 10 -1 10 1 10 2 5 ma 55 10 0 v f i f isfh615aa_07 25 c 50 c 75 c mw 0 50 100 150 200 0 50 100 75 25 c p tot t a isfh615aa_08 transistor diode
document number: 83672 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 643 sfh615aa, sfh615agb, sfh615agr, sfh 615abm, sfh615abl, sfh615ay, sfh615ab optocoupler, phototransistor output, high reliability, 5300 v rms vishay semiconductors package dimensions in inches (millimeters) i17 8 027 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 1 2 4 3 0.179 (4.55) 0.190 (4. 8 3) pin one id 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.50 8 ) 0.035 (0. 8 9) 10 3 to 9 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.031 (0.79) typ. 0.050 (1.27) typ. 0.300 (7.62) typ. 0.110 (2.79) 0.130 (3.30) 0.230 (5. 8 4) 0.250 (6.35) 0.050 (1.27) iso method a min. 15 max. option 9 1 8 4 8 6 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.020 (0.51) 0.040 (1.02) 0.315 ( 8 .00) 0.040 (0.102) 0.09 8 (0.249) 0.012 (0.30) typ.
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83672 644 rev. 1.7, 10-dec-08 sfh615aa, sfh615agb, sfh615agr, sfh615 abm, sfh615abl, sfh615ay, sfh615ab vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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