process parameters 2m (5 volts & 3volts) units metal i pitch (width / space) 2 / 2 m m metal ii pitch (width / space) 2.6 / 2.4 m m poly pitch (width / space) 2 / 2 m m contact 2 x 2 m m via 2.4 x 2.4 m m gate geometry 2 m m p-well junction depth 4 m m n+ junction depth 0.20 m m p+ junction depth 0.28 m m gate oxide thickness 325 ? inter poly oxide thick. 500 ? mosfet electrical parameters features ?double poly / double metal 4 m m poly and metal 1 pitch 320 ps delay per stage (ring osc.) 5.5 volts maximum operating voltage 2.7~3.6 volts low voltage option shrinkable to mitel 1.5 m m process protoduction tm option for low cost prototypes 150mm wafers description the 2 m m p-well process provides flexibility, speed and pack- ing density needed in mixed signal designs. the aggressive de- sign rules make it comparable to most 1.5 m m processes. also, the mosfet transistors are designed with very shallow source- drain junctions and a thin gate oxide to improve speed. a low voltage option is available for 3 volts applications. it offers low and matched threshold voltages for improved dynamic range needed in mixed analog/digital applications. 2 micron cmos process family process parameters electrical parameters 2 micron - 5 volts 2 micron - 3 volts units conditions n channel min. typ. max. p channel min. typ. max. n channel min. typ. max. p channel min. typ. max. vt (10x 2m m) 0.55 0.70 0.85 0.55 0.70 0.85 0.35 0.50 0.65 0.35 0.50 0.65 v saturation ids (10x 2m m) 160 70 175 80 a/m vds=vgs=5volts gain b (10x 2m m) 325 120 325 120 a/v 2 body factor (50x50 m m) 0.40 0.40 0.35 0.35 e v bvdss 10 12 10 13 10 12 10 13 v ids=100na subthreshold slope 100 100 mv/dec. vds=0.1v substrate current 0.25 0.34 0.25 0.34 a/m vds=5.5v; vgs=2.7v field threshold 10 18 10 17 10 18 10 17 v ids = 14a l effective 1.8 1.7 1.8 1.7 m l drawn = 2m for more information: dalsa semiconductor sales tel : (450) 534-2321 ext. 1448 18 boulevard de l?aroport (800) 718-9701 bromont, qubec, canada fax (450) 534-3201 j2l 1s7 email: dalsasales@dalsasemi.com www.dalsasemi.com
2 m m 5 volts min. typ. max. npn vertical 300 bipolar gain 1 1 test condition : vce = 5 volts 2 m m 5 volts & 3 volts min. typ. max. temp. coef. ( w /s q / o c) pwell 13000 140 pfield in pwell 3000 3600 4200 32 n+ 35 45 55 .06 p+ 80 100 120 .15 poly gate 15 20 25 .02 poly capacitor 75 100 125 .06 metal i 0.038 metal ii 0.038 2 m m 5 volts & 3 volts min. typ. max. inter-poly .62 .73 .84 gate oxide 0.99 1.06 1.15 n+ junction .195 p+ junction .138 resistances ( ? /sq.) note: these values are for guidance only. many of them can be adjusted to suit customer requirements. for full process specifications contact a dalsa semiconductor sales office or representative. i d s ( m a ) vds (volts) i d s ( m a ) vds (volts) vgs (volts) vgs (volts) i d s ( a ) i d s ( a ) 10 -13 10 -12 10 -11 10 -10 10 -09 10 -08 10 -07 10 -06 10 -05 10 -04 10 -03 180 150 120 90 60 30 0 i d s ( a ) 10 -13 10 -12 10 -11 10 -10 10 -09 10 -08 10 -07 10 -06 10 -05 10 -04 i d s ( a ) -60 -50 -40 -30 -20 -10 0 vgs = -2 volts vgs = -3 volts vgs = -4 volts vgs = -5 volts vgs = 2 volts vgs = 3 volts vgs = 4 volts vgs = 5 volts 8 7 6 5 4 3 2 1 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 1 2 3 4 5 0 -1 -2 -3 -4 -5 0 0.5 1.0 1.5 2.0 0 -0.5 -1.0 -1.5 -2.0 capacitances (ff/ m 2 ) fig 1: i-v characteristics for a 50x2 m n-mosfet (2 m 5 volts process) fig 2: i-v characteristics for a 50x2 m p-mosfet (2 m 5 volts process) fig 3: subthreshold characteristics at vds=0.1 volts for a 50x2 m n-mosfet (2 m 5 volts process) fig 4: subthreshold characteristics at vds=-0.1 volts for a 50x2 m p-mosfet (2 m 5 volts process) 2 micron cmos process family (cont?d)
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