semiconductor group 1 silicon switching diode bas 16 maximum ratings type ordering code (tape and reel) marking package 1) pin configuration bas 16 q62702-f739 a6s sot-23 parameter symbol values unit reverse voltage v r 75 v forward current i f 250 ma junction temperature t j 150 ?c total power dissipation, t s =54?c p tot 370 mw storage temperature range t stg C 65 + 150 peak reverse voltage v rm 85 surge forward current, t = 1 m s i fs 4.5 a thermal resistance junction - ambient 2) r th ja 330 k/w junction - soldering point r th js 260 1) for detailed information see chapter package outlines. 2) package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 cu. l for high-speed switching 07.94
semiconductor group 2 bas 16 electrical characteristics at t a = 25 ?c, unless otherwise specified. test circuit for reverse recovery time pulse generator: t p = 100 ns, d = 0.05 oscillograph: r = 50 w t r = 0.6 ns, r j = 50 w t r = 0.35 ns c 1pf unit values parameter symbol min. typ. max. dc characteristics v breakdown voltage i (br) = 100 m a v (br) 75 C C m a reverse current v r = 75 v v r = 25 v, t a = 150 ?c v r = 75 v, t a = 150 ?c i r C C C C C C 1 30 50 ac characteristics ns reverse recovery time i f = 10 ma, i r = 10 ma, r l = 100 w measured at i r = 1 ma t rr CC6 mv forward voltage i f = 1ma i f = 10 ma i f = 50 ma i f = 150 ma v f C C C C C C C C 715 855 1000 1250 pf diode capacitance v r = 0 v, f = 1 mhz c d CC2 v forward recovery voltage i f = 10 ma, t p = 20 ns v fr C C 1.75
semiconductor group 3 bas 16 forward current i f = f ( t a *; t s ) * package mounted on epoxy forward current i f = f ( v f ) t a = 25 ?c reverse current i r = f ( t a ) peak forward current i fm = f ( t ) t a = 25 ?c
semiconductor group 4 bas 16 forward voltage v f = f ( t a )
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