feb.1999 mitsubishi transistor modules QM30TX-HB medium power switching use insulated type QM30TX-HB outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, inverters, dc motor controllers, nc equipment, welders 68 8 20 20 62.5 0 ?.2 10.5 14 14 74 0.25 86 (10) 18.5 18.5 18.5 18.5 (10) 80 0.25 94 11?4 4 f 5.4 0.1 b1 b2 u b3 b4 v b5 b6 w (n) (p)+ 10 7 4 2 13 13 24.8 26 28.2max. label b1 b2 b3 b4 u b5 b6 vw p( + ) n( ) ? i c collector current .......................... 30a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 mitsubishi transistor modules QM30TX-HB medium power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m4 mounting screw m5 b(e) terminal screw m4 typical value ratings 600 600 600 7 30 30 250 1.8 300 C40~+150 C40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 520 unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm g electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v, collector open i c =30a, i b =40ma i c =C30a (diode forward voltage) i c =30a, v ce =2.5v v cc =300v, i c =30a, i b1 =60ma, Ci b2 =0.6a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 1.0 1.0 60 2.5 3.0 1.8 2.0 8.0 3.0 0.5 2.0 0.2
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM30TX-HB medium power switching use insulated type 0 10 ? 10 ? 10 ? 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.2 2.6 3.0 3.4 3.8 4.2 v ce =2.5v t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 v ce =2.5v t j =25? t j =125? v ce =5.0v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? i b =40ma v be(sat) v ce(sat) 100 80 60 40 20 0 01 23 4 5 t j =25? i b =100ma i b =20ma i b =10ma i b =0.5a i b =200ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 i c =10a t j =25? t j =125? i c =30a i c =20a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t f t on t s t j =25? t j =125? i b2 =?.6a v cc =300v i b1 =60ma
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM30TX-HB medium power switching use insulated type z th (jCc) ( c/ w) 0 10 0 10 1 10 2 10 ? 10 ? 10 ? 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 80 20 0 0 100 800 60 40 300 400 500 70 50 30 10 t j =125? i b2 =?.0a i b2 =?.6a 200 600 700 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 ? 10 23457 0 10 23457 1 10 v cc =300v t j =25? t j =125? i c =30a i b1 =60ma t s t f 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? dc 1m s 100 s 500 s 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 23457 0.2 7 5 3 24 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 second breakdown area collector dissipation non-repetitive
feb.1999 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) t rr ( m s) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) z th (jCc) ( c/ w) mitsubishi transistor modules QM30TX-HB medium power switching use insulated type 0 10 1 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 0 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 ? 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 i rr t rr q rr v cc =300v i b1 =60ma t j =25? t j =125? i b2 =?.6a 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 23 57 3 2
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