ne687m33 nec's npn silicon transistor california eastern laboratories ? low noise: nf = 1.5 db typ. @ v ce = 1 v, i c = 3 ma, f = 2 ghz ? 3-pin super lead-less minimold (m33) package features data sheet ordering information remark to order evaluation samples, contact your nearby sales of?ce. the unit sample quantity is 50 pcs. absolute maximum ratings (t a =+25oc) parameter symbol ratings unit collector to base voltage v cbo 5.0 v collector to emitter voltage v ceo 3.0 v emitter to base voltage v ebo 2.0 v collector current i c 30 ma total power dissipation p tot note 90 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb caut ion observe precautions when handling because these devices are sensitive to electrostatic discharge. part number quantity supplying form ne687m33-a 50 pcs (non reel) ? 8 mm wide embossed taping ? pin 2 (base) face the perforation side of the tape NE687M33-T3-A 10 kpcs/reel
ne687m33 electrical characteristics (t a =+25oc) notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank fb marking w2 h fe value 70 to 140 parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma C C 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma C C 100 na dc current gain h fe note 1 v ce = 1 v, i c = 10 ma 70 110 140 C rf characteristics gain bandwidth product f t v ce = 1 v, i c = 10 ma, f = 2 ghz 10 12 C ghz insertion power gain |s 21e | 2 v ce = 1 v, i c = 10 ma, f = 2 ghz 7 9 C db noise figure nf v ce = 1 v, i c = 3 ma, f = 2 ghz, z s = z opt C 1.5 2.0 db reverse transfer capacitance c re note 2 v cb = 0.5 v, i c = 0 ma, f = 1 mhz C 0.4 0.7 pf
ne687m33 typical characteristics (t a =+25oc, unless otherwise speci?ed) remark the graphs indicate nominal characteristics. v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 f = 1 mhz i b = 50 a 500 a 200 a 250 a 300 a 350 a 400 a 450 a 150 a 100 a 0 25 50 75 100 125 150 1 2 3 4 10 20 30 0 35 25 15 5 200 150 100 50 90 250 1 2 3 4 5 0.5 0.2 0.1 0 0.4 0.3 0.6 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) collector current i c (ma ) base to emitter v oltage v be (v ) collector current vs. base to emitter vo lt age collector current i c (ma ) collector to emitter v oltage v ce (v ) collecto r current vs. collecto r to emitter vo lt age reverse transfer capacitance c re (pf) collector to base v oltage v cb (v ) reverse transfer cap acita nc e vs. collecto r to base volt age collector current i c (ma ) base to emitter v oltage v be (v ) collecto r current vs. base to emitter vo lt age total power dissip at io n vs. ambient tempera tur e ambient t emperature t a (oc) t otal power dissipation p to t (mw)
ne687m33 typical characteristics (t a =+25oc, unless otherwise speci?ed) remark the graphs indicate nominal characteristics. v ce = 1 v 1000 100 10 1 0.1 10 100 v ce = 2 v dc current gain h fe collector current i c (ma) dc current gain vs. collect or current dc current gain h fe collector current i c (ma) dc current gain vs. collect or current 1000 100 10 1 0.1 10 100
ne687m33 package dimensions 3-pin super lead-less minimold (m33) (unit: mm) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 06/22/2004 0.15 0.57 0.285 0.125 0.440.05 1 2 3 (bottom v iew) 0.15 0.840.05 0.125 0.15 0.640.05 0.1 1 0.4 1. emitter 2. base 3. collector pin connections w 2 ne package code: m33 sot number: -
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