1 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? 30 - 40 ghz bandwidth ? > 33 dbm nominal psat @ pin = 20dbm ? 18 db nominal gain ? bias: 6 v, 1050 ma idq (1.9a under rf drive) ? 0.15 um 3mi phemt technology ? chip dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in primary applications ? military radar systems ? ka-band sat-com ? point to point radio fixtured data v d = 6v, i d = 1050ma -25 -20 -15 -10 -5 0 5 10 15 20 25 30 32 34 36 38 40 frequency (ghz) s-parameters (db) s21 s22 s11 pout @ pin =20dbm 30 31 32 33 34 35 30 32 34 36 38 40 frequency (ghz) pout (dbm) product description the triquint TGA4516 is a high power mmic amplifier for ka-band applications. the part is designed using triquint?s 0.15um power phemt process. the small chip size is achieved by utilizing triquint?s 3 metal layer interconnect (3mi) design technology that allows com paction of the design over competing products. the TGA4516 provides >33 dbm saturated output power, and has typical gain of 18 db at a bias of 6v and 1050ma (idq). the current rises to 1.9a under rf drive. this hpa is ideally suited for many applications such as military radar system s, ka-band sat-com, and point-to-point radios. the TGA4516 is 100% dc and rf tested on-wafer to ensure performance compliance . lead-free & rohs compliant. ka band 2w power amplifier datasheet subject to change without notice
2 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com symbol parameter value notes v + positive supply voltage 6.5 v 2/ v - negative supply voltage range -5 to 0 v i + positive supply current 3 a 2 / 3 / ? i g ? gate supply current 85 ma 3 / p in input continuous wave power 267 mw p d power dissipation 12.7 w 2 / 4 / t ch operating channel temperature 200 c 5 / 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 c, the median life is 7.3e3 hrs. 5/ junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. table i maximum ratings 1 /
3 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii electrical characteristics (ta = 25 o c, nominal) parameter typical units drain operating 6 v quiescent current 1050 ma frequency range 30 - 40 ghz small signal gain, s21 18 db input return loss, s11 10 db output return loss, s22 7 db power @ saturated, psat 33 dbm q1- q4 are 400 um fets, q5 is 2560 um fet, q6 is 4160 um fet symbol parameter min. max. units i dss,q1 saturated drain current 80 240 ma v bvgs,q1 breakdown voltage gate-source -18 -8 v v bvgd,q1-q6 breakdown voltage gate-drain -18 -11 v v p,q1-q6 pinch_off voltage -1.5 -0.5 v table ii dc probe tests (ta = 25 o c, nominal)
4 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com parameter test conditions t ch ( o c) jc ( o c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 6 v id = 1700 ma freq = 35 ghz pdiss = 7.8 w 150 10.2 1e+6 table iv thermal information note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case is at saturated output power when dc power consumption rises to 10.6 w with 2.3 w rf pow er delivered to load. power dissipated is 8.2 w and the temperature rise in the channel is 84 c. median lifetime (tm) vs. channel temperature
5 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com fixtured performance TGA4516 pout @ pin =20dbm vds=6v, idq=1050ma 25 26 27 28 29 30 31 32 33 34 35 28 30 32 34 36 38 40 42 frequency (ghz) pout (dbm) pin=20dbm vds=6v, idq=1050ma -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 28 30 32 34 36 38 40 42 frequency (ghz) s-parameters (db) s11 s22 s21
6 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com fixtured performance TGA4516 pout vs. pin freq=35ghz, vds=6v, idq=1050ma 10 15 20 25 30 35 40 -10-5 0 5 10152025 pin (dbm) pout (dbm) 0 5 10 15 20 25 30 gain (db) pout large signal gain TGA4516 ids vs. pin freq=35ghz, vds=6v, idq=1050ma 10 15 20 25 30 35 40 -10-5 0 5 10152025 pin (dbm) pout (dbm) 1000 1200 1400 1600 1800 2000 2200 ids (ma) pout ids
7 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. units: millimeters [inches] thickness: 0.100 [0.004] (reference only) chip edge to bond pad dimensions are shown to center of bond pad chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002] rf ground is backside of mmic bond pad #1 (rf input) 0.100 x 0.200 [0.004 x 0.008] bond pad #2 (vg2) 0.100 x 0.100 [0.004 x 0.004] bond pad #3 (vd12) 0.100 x 0.200 [0.004 x 0.008] bond pad #4 (vg3) 0.100 x 0.100 [0.004 x 0.004] bond pad #5 (vd3) 0.100 x 0.100 [0.004 x 0.004] bond pad #6 (rf output) 0.100 x 0.200 [0.004 x 0.008] bond pad #7 (vd3) 0.100 x 0.200 [0.004 x 0.008] bond pad #8 (vg3) 0.100 x 0.100 [0.004 x 0.004] bond pad #9 (vd12) 0.100 x 0.200 [0.004 x 0.008] bond pad #10 (vg2) 0.100 x 0.100 [0.004 x 0.004]
8 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.
9 TGA4516 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c.
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