r.1.072099 ghz technology inc. reserves the right to make changes without further notice. to verify the current version please check our web site at www.ghz.com or contact our factory direct. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1516-35 35 watt, 28v, pulsed microwave 1450 - 1550 mhz proposed product general description the 1516-35 is a common base transistor capable of providing 35 watts of class c, rf output power over the band 1450-1550 mhz. this transistor is designed for microwave broadband class c amplifier applications. it includes input and output prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. case outline 55aw, style 1 absolute maximum ratings maximum power dissipation @25 ! ! ! ! c 135 w maximum voltage and current bv ces collector to emitter voltage 45v bv ebo emitter to base voltage 3.5v i c collector current 12a temperatures storage temperature -65 to +200 ! c operating junction temperature +200 ! c electrical characteristics @ 25 ! ! ! ! c symbol characteristics test conditions min typ max units p out power out f = 1450-1550 35 w p in power input 7w pg power gain 7.0 db " c collector efficiency v cb = 28 volts p in = 7 watts as above 40 % vswr load mismatch tolerance f = 1.45 ghz, p in = 7 w 10:1 bv ces collector to emitter breakdown i c = 20ma 45 v bv ebo emitter to base breakdown ie = 15ma 3.5 v h fe current gain v ce = 5v, i c = 1a 10 100 c ob * output capacitance f = 1mhz, v cb = 28v pf # jc thermal resistance 1.3 o c/w *not measurable due to output match issued july 1999
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