bav99 high conductance ultra fast diode sourced from process 1p. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units w iv working inverse voltage 70 v i o average rectified current 200 ma i f dc forward current 600 ma i f recurrent peak forward current 700 ma i f(surge) peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 2.0 a a t stg storage temperature range -55 to +150 c t j operating junc tion temperature 150 c symbol characteristic max units bav99 p d total device dissipation derate above 25 c 350 2.8 mw mw/ c r q ja thermal resistanc e, j unction to ambient 357 c/w bav99 3 2 1 connection diagram a7 3 12 sot-23 3 1 2 discrete power & signal technologies ? 1997 fairchild semiconductor corporation
bav99 electrical characteristics ta = 25c unless otherwise noted typical characteristics symbol parameter test conditions min max units b v breakdown voltage i r = 100 m a70v i r reverse current v r = 70 v v r = 25 v, t a = 150 c v r = 70 v, t a = 150 c 2.5 30 50 m a m a m a v f forward voltage i f = 1.0 ma i f = 10 ma i f = 50 ma i f = 150 ma 715 855 1.0 1.25 mv mv v v c o diode capacitance v r = 0, f = 1.0 mhz 1.5 pf t rr reverse recover y time i f = i r = 10 ma, i rr = 1.0 ma, r l = 100 w 6.0 ns v fm peak forward voltage i f = 10 ma, t r = 20 ns 1.75 v 50 0 05 reverse voltage vs reverse current bv - 1.0 to 100 ua 1 2 3 5 10 20 30 50 100 11 0 120 130 140 150 i - reverse current (ua) v - reverse voltage (v) r r ta= 25c r r ta= 25c 1n4150 mmbd1201 1205 reverse current vs reverse voltage ir - 10 to 100 v gener al r ule: t he reverse current of a di ode will approximately double for every ten (10) degree c increase in temperature 10 20 30 50 70 100 0 50 100 150 200 250 300 v - reverse voltage (v) i - reverse current (na) 225 forward voltage vs forward current vf - 1.0 to 100 ua 1 2 3 5 10 20 30 50 100 250 300 350 400 450 i - forward current (ua) v - forward voltage (mv) f f 485 ta= 25c forward voltage vs forward current vf - 0.1 to 10 ma 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 i - forward current (ma) v - forward voltage (mv) f f 725 ta= 25c i f v f v r v f high conductance ultra fast diode (continued)
bav99 typical characteristics (continued) average rectified current (io) & forward current (i ) versus ambient temperature (t ) 050100150 0 100 200 300 400 500 t - ambient temperature ( c) p - power dissipation (mw) i - forward current steady state - ma o d r a f io - average rectified current - ma a forward voltage vs forward current vf - 10 - 800 ma 10 20 30 50 100 200 300 500 0.6 0.8 1 1.2 1.4 i - forward current (ma) v - forward voltage (v) f f 1.5 ta= 25c capacitance vs reverse voltage vr - 0.0 to 15 v 02468101214 1 1.1 1.2 1.3 reverse voltage (v) capacitance (pf) ta= 25c 15 reverse recovery time vs reverse current trr - ir 10 ma vs 60 ma irr (r everse recov ery current) = 1.0 ma - rloop = 100 ohms 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 4 reverse current (ma) reverse recovery (ns) ta= 25c power derating curve 0 50 100 150 200 0 100 200 300 400 500 i - average temperature ( c) p - power dissipation (mw) o d o do-35 pkg sot-23 pkg v f p d high conductance ultra fast diode (continued)
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