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savantic semiconductor product specification silicon npn power transistors 2SC4123 description with to-3pml package high breakdown voltage, high reliability . high speed built in damper diode applications ultrahigh-definition crt display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter maximum absolute ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i cm collector current-peak 16 a t c =25 60 w p c collector power dissipation 3 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4123 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a;i b =1.2 a 5 v v besat base-emitter saturation voltage i c =5a;i b =1.2 a 1.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma;i b =0 800 v i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma i cbo collector cut-off current v cb =800v; i e =0 10 a i ces collector cut-off current v ce =1500v; r be =0 1 ma h fe-1 dc current gain i c =1 a ; v ce =5v 8 h fe-2 dc current gain i c =5a ; v ce =5v 4 6 v f diode forward voltage i ec =7a 2.0 v switching times t stg storage time 3.0 s t f fall time i c =5a;r l =33.3 a i b1 =1a;- i b2 =2a v cc =200v 0.1 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4123 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SC4123

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