application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device ?can be driven from 5 v source suitable for motor drive, dc-dc converter, power switch and solenoid drive 1 2 3 2 1 3 to?20ab 1. gate 2. drain (flange) 3. source table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss ?0 v drain current i d 10 a drain peak current i d(pulse) *40 a body to drain diode reverse drain current i dr 10 a channel dissipation pch** 30 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at t c = 25 ? 2SK970 silicon n-channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 60 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.12 0.15 ? i d = 5 a, v gs = 10 v * resistance 0.17 0.22 i d = 5 a, v gs = 4 v * forward transfer admittance |y fs | 3.5 6.0 s i d = 5 a, v ds = 10 v * input capacitance ciss 400 pf v ds = 10 v, v gs = 0, output capacitance coss 220 pf f = 1 mhz reverse transfer capacitance crss 60 pf turn-on delay time t d(on) ? nsi d = 5 a, v gs = 10 v, rise time t r 55 ns r l = 6 ? turn-off delay time t d(off) 140 ns fall time t f ?0ns body to drain diode forward v df 1.2 v i f = 10 a, v gs = 0 voltage body to drain diode reverse t rr 125 ns i f = 10 a, v gs = 0, recovery time di f /dt = 50 a/? * pulse test 2SK970
50 100 0 case temperature t c (?) 150 20 channel dissipation pch (w) power vs. temperature derating 40 60 maximum safe operation area drain current i d (a) 0.3 1.0 3 1.0 3 10 10 30 100 drain to source voltage v ds (v) 0.1 100 0.3 30 0.1 10 s 100 s 1 ms pw = 10 ms (1 shot) dc operation (t c = 25?) operation in this area is limited by r ds (on) ta = 25? typical output characteristics 6 drain to source voltage v ds (v) 8 4 2 10 drain current i d (a) v gs = 2.0 v pulse test 10 v 4 v 5 v 3.5 v 3.0 v 2.5 v 0 2 4 6 8 0 10 typical transfer characteristics 3 gate to source voltage v gs (v) 4 2 1.0 05 2 4 6 8 10 0 drain current i d (a) t c = 25? 75? v ds = 10 v pulse test ?5? 2SK970
2SK970 drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage 6 gate to source voltage v gs (v) 8 4 2 010 0.8 1.2 1.6 2.0 0 0.4 pulse test i d = 2 a 5 a 10 a 5 drain current i d (a) 10 2 1.0 50 0.05 0.1 0.2 0.5 1.0 0.5 0.02 0.01 20 static drain to source on state resistance vs. drain current static drain to source on state resistance r ds (on) ( ? ) v gs = 4 v 10 v pulse test 40 case temperature t c (?) 80 0 ?0 160 0.1 0.2 0.3 0.4 0.5 0 120 static drain to source on state resistance vs. temperature static drain to source on state resistance r ds (on) ( ? ) i d = 10 a 5 a 2 a 2 a 5 a 10 a pulse test v gs = 4 v v gs = 10 v forward transfer admittance vs. drain current 50 20 10 5 2 1.0 0.5 0.1 0.2 0.5 1.0 2 10 drain current i d (a) 5 forward transfer admittance ? yfs ? (s) t c = 25? v ds = 10 v pulse test ?5? 75?
2SK970 reverse recovery time t rr (ns) 500 200 100 50 20 10 5 0.5 1.0 5 50 reverse drain current i dr (a) 10 2 20 body to drain diode reverse recovery time di/dt = 50 a/ s, ta = 25? v gs = 0 pulse test typical capacitance vs. drain to source voltage 10000 3000 1000 300 30 10 capacitance c (pf) 01020 50 drain to source voltage v ds (v) 30 100 40 v gs = 0 f =1mhz ciss coss crss 100 80 60 40 20 04 12 16 gate charge qg (nc) 8 20 16 12 8 4 0 dynamic input characteristics drain to source voltage v ds (v) gate to source voltage v gs (v) 20 i d = 10 a v ds v gs v dd = 50 v 25 v 10 v 25 v 10 v v dd = 50 v switching characteristics switching time t (ns) 500 200 100 50 20 10 5 0.1 0.2 0.5 1.0 2 10 drain current i d (a) 5 t d (off) t f t r t d (on) v gs = 10 v pw = 2 s, duty < 1 %
2SK970 20 16 12 8 4 0 0.4 1.2 1.6 2.0 source to drain voltage v sd (v) 0.8 reverse drain current vs. source to drain voltage reverse drain current i dr (a) v gs = 0, ?5 v pulse test 10 v 15 v 5 v 3 1.0 0.3 0.1 0.03 0.01 10 1 m 10 m 100 m pulse width pw (s) 100 110 normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) p dm pw d = pw t t t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse ch? (t) = s (t) ? ch? ch? = 4.17?/w, t c = 25?
2SK970 vin monitor vout monitor r l 50 ? vin = 10 v d.u.t . v dd = 30 v . switching time test circuit vin 10 % 90 % 90 % 90 % 10 % t d (on) t d (off) t r t f vout 10 % wavewforms
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