specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 1 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier product features ? 800 ? 2400 mhz ? +32.5 dbm p1db ? -51 dbc aclr @ ?w p avg ? -55 dbc imd3 @ ?w pep ? 17% efficiency @ ?w p avg ? internal active bias ? internal temp compensation ? capable of handling 7:1 vswr @ 28 vcc, 2.14 ghz, 1w cw pout ? lead-free/rohs-compliant 5x6 mm power dfn package applications ? mobile infrastructure hpa ? wibro hpa product description the ap601 is a high dynamic range power amplifier in a lead-free/rohs-compliant 5x6mm power dfn smt package. the single stage amplifier has 13.5 db gain, while being able to achieve high performance for 800-2400 mhz applications with up to +32.5 dbm of compressed 1db power. the ap601 uses a high reliability, high voltage ingap/gaas hbt process technology. the device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. the module does not require any negative bias voltage; an internal active bias allows the ap601 to operate directly off a commonly used high voltage supply (typically +24 to +32v). an added feature allows the quiescent bias to be adjusted externally to meet specific system requirements. the ap601 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. this combination makes the device an excellent candidate for next generation multi-carrier 3g mobile infrastructure. functional diagram aclr1 vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ? c -60 -55 -50 -45 -40 -35 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 20 ma 40 ma 50 ma specifications w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, icq = 40 ma parameter units min typ max operational bandwidth mhz 800 2200 test frequency mhz 2140 output channel power dbm +24 power gain db 13.5 input return loss db 12 output return loss db 8 aclr dbc -51 imd3 @ +24 dbm pep dbc -55 pin_vpd current, ipd ma 1 operating current, icc ma 52 collector efficiency % 17 output p1db dbm +32.5 quiescent current, icq ma 40 vpd, vbias v +5 vcc v +28 absolute maximum rating parameter rating storage temperature, t stg -55 to +125 oc junction temperature, t j for 10 6 hours mttf 192 oc rf input power (cw tone), p in input p6db breakdown voltage c-b, bv cbo 80 v @ 0.1 ma breakdown voltage c-e, bv ceo 51 v @ 0.1 ma quiescent bias current, i cq 80 ma power dissipation, p diss 2.3 w operation of this device above any of th ese parameters may cause permanent damage. typical performance w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, icq = 40 ma parameter units typical test frequency mhz 940 1960 2140 channel power dbm +24 +24 +24 power gain db 15.8 15 13.5 input return loss db 13 11 12 output return loss db 7 10 8 aclr dbc -50 -49 -51 imd3 @ +24 dbm pep dbc -51 -62 -55 operating current, icc ma 52 52 52 collector efficiency % 17 17 17 output p1db dbm +32.5 +32.7 +32.5 quiescent current, icq ma 40 vpd, vbias v +5 vcc v +28 notes: 1. the reference designs shown in this datasheet have the device optimized for wcdma aclr performance at +25 c. biasing for the amplifier is suggested at vcc = +28v and icq = 40 ma to achieve the best tradeoff in term s of efficiency and linearity. increasing icq will improve upon the device linearity (imd3 and aclr), but will decrease the efficiency performance slightly. more information is given in the ot her parts of this datasheet. 2. the ap601 evaluation board has been tested for ruggedness to be capable of handling: 7:1 vswr @ +28 vcc, 2140 mhz, 1w cw pout, 5:1 vswr @ +30 vcc, 2140 mhz, 1w cw pout, 3:1 vswr @ +32 vcc, 2140 mhz, 1w cw pout. ordering information part no. description AP601-F high dynamic range 28v 1.8w hbt amplifier ap601-pcb900 869-960 mhz evaluation board ap601-pcb1960 1930-1990 mhz evaluation board ap601-pcb2140 2110-2170 mhz evaluation board
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 2 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier typical device data s-parameters (v cc = +28 v, v pd = v bias = 5 v, i cq = 40 ma, t = 25 c, unmatched 50 ohm system, calibrated to device leads) 0 0.5 1 1.5 2 2.5 frequency (ghz) gain / maximum stable gain -10 -5 0 5 10 15 20 25 30 35 40 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 3.00001ghz swp min 3e-005ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 3.00001ghz swp min 3e-005ghz the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the marked red line. the impedance plots are shown from 50 ? 3000 mhz, with markers placed at 0. 5 ? 3.0 ghz in 0.5 ghz increments. freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -9.60 -165.86 22.23 169.20 -46.52 80.76 -0.25 -5.41 100 -8.20 -156.90 21.64 160.86 -41.16 69.46 -0.38 -14.13 200 -5.47 -154.63 20.66 144.37 -36.22 55.53 -1.13 -26.14 400 -2.93 -164.90 18.00 121.17 -32.88 35.73 -2.85 -41.81 600 -2.02 -173.51 15.57 107.46 -31.96 24.64 -3.92 -51.12 800 -1.58 -179.10 13.78 98.50 -31.66 18.33 -4.42 -58.97 1000 -1.69 177.02 12.16 89.73 -30.97 22.20 -4.57 -65.06 1200 -1.49 173.06 11.02 82.27 -30.27 13.95 -4.73 -70.40 1400 -1.52 168.28 10.09 75.95 -29.97 9.68 -4.46 -74.09 1600 -1.70 162.02 9.48 69.46 -29.41 5.89 -4.15 -77.84 1800 -2.01 153.47 9.14 61.67 -28.83 1.59 -3.85 -81.69 2000 -2.35 142.58 8.93 52.54 -28.18 -4.64 -3.63 -85.86 2200 -2.78 130.51 8.73 42.07 -27.42 -11.50 -3.42 -90.97 2400 -3.34 119.29 8.50 30.77 -26.75 -20.45 -3.20 -97.68 2600 -4.04 111.03 8.34 17.30 -26.07 -30.92 -2.86 -106.74 2800 -5.00 109.46 8.17 1.87 -25.45 -44.10 -2.39 -119.23 3000 -5.86 118.67 8.03 -16.70 -25.11 -62.65 -1.91 -134.59 device s-parameters are available for download off of the website at: http://www.wj.com
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 3 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier application circuit pc board layout circuit board material: 0.0147? rogers ul tralam 2000, single layer, 1 oz copper, r = 2.45, microstrip line details: width = .042?, spacing = .050? baseplate configuration notes: 1. please note that for reliable operation, the evalua tion board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing is recommended. evaluation board bias procedure following bias procedure is recommended to ensure proper functiona lity of ap601 in a laboratory environment. the sequencing is not required in the final system application. bias. voltage (v) vcc +28 vbias +5 vpd +5 turn-on sequence: 1. attach input and output lo ads onto the evaluation board. 2. turn on power supply vcc = +28v. 3. turn on power supply vbias = +5v. at this point, the only current drawn by the devi ce is leakage current (< 25 a). 4. turn on power supply vpd = +5v. power supply vcc should now be drawing typical icq = 40 ma. 5. turn on rf power. turn-off sequence: 1. turn off rf power. 2. turn off power supply vpd = +5v. 3. turn off power supply vbias = +5v. 4. turn off power supply vcc = +28v. notes: 1. icq can be adjusted with the resistor r2 from the vpd (+5v ) supply and the pin_vpd (pin14) of the amplifier. increasing r2 results in a lower icq. icq shoul d not be increased above 80ma. 2. vpd is used as a reference for the internal active bias circui try. it can be used to turn on/off the amplifier. ipd depends on the icq quiescent current setting. ipd can be up to 2ma at a quiescent current setting of 40ma. 3. vbias should be maintained fixed at +5v. ibias will change based on rf input power level. it can be up to 2ma on the ap601 . ipd vs icq 0 0.5 1 1.5 2 020406080100 icq setting (ma) ipd (ma) ibias vs output power 0 0.5 1 1.5 2 18 20 22 24 26 28 output average power (dbm) ibias (ma)
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 4 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 869-960 application circ uit (ap601-pcb900) typical wcdma perf ormance at 25 c at a channel power of +24 dbm frequency (mhz) 880 940 units w-cdma ch. power +24 +24 dbm power gain 16.5 15.8 db input return loss 8.9 14 db output return loss 15 7.5 db aclr -50 -50 dbc imd3 @ +24 dbm pep -51 -51 dbc operating current, icc 54 52 ma collector efficiency 16.6 17 % output p1db +32.5 +32.5 dbm quiescent current, icq 40 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. the center of c1 is at 0.710? (29.1 @ 940 mhz) from the center of c24. 4. the center of c24 is placed at 0.285? (11.7 @ 940 mhz) from the edge of the ap601 (u1). 5. the center of c26 is placed at 0.055? (2.3 @ 940 mhz) from the edge of the ap601 (u1). 6. the center of l4 is at 0.095? (3.9 @ 940 mhz) from the center of c26. 7. the bold-faced rf trace is for the dc bias feed. the stub?s length is approximately a ? . 8. the main rf trace is cut at components l3 and l4 for this particular reference design. 869-960 mhz application circuit performance plots gain vs. frequency vcc = 28v, icq = 40 ma, 25 ? c 13 14 15 16 17 18 0.8 0.84 0.88 0.92 0.96 1 frequency (ghz) gain (db) s11, s22 vs. frequency vcc = 28v, icq = 40 ma, 25 ? c -25 -20 -15 -10 -5 0 0.8 0.85 0.9 0.95 1 1.05 1.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 0 10 20 30 40 50 60 17 21 25 29 33 output power (dbm) collector efficiency (%) 920 mhz 940 mhz 960 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 40 ma, 25 ? c -60 -55 -50 -45 -40 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 869 mhz 920 mhz 880 mhz 940 mhz 894 mhz 960 mhz wcdma 3gpp test model 1+64dpch, 60% clipping, par = 8.6 db @ 0.01% imd vs. output power cw 2-tone signal, 940 mhz, ? f = 1 mhz, 28v, 40 ma icq, 25 ? c -70 -60 -50 -40 20 22 24 26 28 30 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 acpr vs. output power vs. frequency is-95a, 9 ch. fwd, 940 mhz, vcc = 28v, icq = 40 ma, 25 ? c -70 -60 -50 -40 17 19 21 23 25 27 average output power (dbm) acpr (dbc) unconditionally stable circuit version of th is application circuit is available for download off of the website at: http://ww w.wj.com c24 1.8pf see note 4 c26 0.5pf see note 5 v bias v pd gnd v cc 5.1 ohm 3.3pf see note 3 c7 1000pf 15nh see note 6
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 5 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 1930-1990 mhz application circuit (ap601-pcb1960) typical wcdma perf ormance at 25 c at a channel power of +24 dbm frequency 1960 mhz w-cdma channel power +24 dbm power gain 15 db input return loss 11 db output return loss 10 db aclr -49 dbc imd3 @ +24 dbm pep -62 dbc operating current, icc 52 ma collector efficiency 17 % output p1db +32.7 dbm quiescent current, icq 40 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. the center of l3 is placed at 0.035? (3.0 @ 1960 mhz) from the center of c5. 4. the center of c5 is placed at 0.085? (7.3 @ 1960 mhz) from the edge of the ap601 (u1). 5. the center of c19 is placed at 0.755? (64.5 @ 1960 mhz) from the edge of the ap601 (u1). 6. the center of c18 is placed at 0.300? (25.6 @ 1960 mhz) from the center of c19. 7. the bold-faced rf trace is for the dc bias feed. the stub?s length is approximately a ? . 8. the main rf trace is cut at component loca tion l3 for this particular reference design. 1930-1990 mhz application circuit performance plots gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 11 12 13 14 15 16 23 25 27 29 31 33 output power (dbm) gain (db) 1930 mhz 1960 mhz 1990 mhz s11, s22 vs. frequency vcc = 28v, icq = 40 ma, 25 ? c -25 -20 -15 -10 -5 0 1.8 1.85 1.9 1.95 2 2.05 2.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 0 10 20 30 40 50 18 22 26 30 34 output power (dbm) collector efficiency (%) 1930 mhz 1960 mhz 1990 mhz aclr1 vs. output power vs. frequency vcc = 28v, icq = 40 ma, 25 ? c -65 -60 -55 -50 -45 -40 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 1930 mhz 1960 mhz 1990 mhz wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db imd vs. output power cw 2-tone signal, 940 mhz, ? f = 1 mhz, 28v, 40 ma icq, 25 ? c -80 -70 -60 -50 -40 22 24 26 28 30 32 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 acpr vs. output power vs. frequency is-95a, 9 ch. fwd, 1960 mhz, vcc = 28v, icq = 40 ma, 25 ? c -80 -70 -60 -50 -40 17 19 21 23 25 27 average output power (dbm) acpr (dbc) c5 2.2pf see note 4 4.7 nh see note 3 c19 2.4pf see note 5 v bias v pd gnd v cc c28 0.8pf see note 6 c7 1000pf c27 0.1 f w = .030? l = .980?
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 6 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 2110-2170 mhz application circuit (ap601-pcb2140) typical wcdma perf ormance at 25 c at a channel power of +24 dbm frequency 2140 mhz w-cdma channel power +24 dbm power gain 13.5 db input return loss 12 db output return loss 8 db aclr -51 dbc imd3 @ +24 dbm pep -55 dbc operating current, icc 52 ma collector efficiency 17 % output p1db +32.5 dbm quiescent current, icq 40 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. the center of c22 is placed at 0.090? (8.4 @ 2140 mhz) from the center of c1. 4. the center of c1 is placed at 0.910? (84.9 @ 2140 mhz) from the center of c5. 5. the center of c5 is placed at 0.100? (9.3 @ 2140 mhz) from the edge of the ap601 (u1). 6. the center of c19 is placed at 0.760? (70.9 @ 2140 mhz) from the edge of the ap601 (u1). 7. the bold-faced rf trace is for the dc bi as feed. the stub?s length is approximately a ? . 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 9 10 11 12 13 14 22 24 26 28 30 32 output power (dbm) gain (db) 2110 mhz 2140 mhz 2170 mhz s11, s22 vs. frequency vcc = 28v, icq = 40 ma, 25 ? c -25 -20 -15 -10 -5 0 2 2.05 2.1 2.15 2.2 2.25 2.3 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 0 10 20 30 40 50 12 16 20 24 28 32 output power (dbm) collector efficiency (%) 2110 mhz 2140 mhz 2170 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 40 ma, 25 ? c -60 -55 -50 -45 -40 -35 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 2110 mhz 2140 mhz 2170 mhz icc vs. output power vs. frequency wcdma, vcc = 28v, icq = 40 ma, 25 ? c 40 45 50 55 60 65 16 18 20 22 24 26 average output power (dbm) collector current (ma) 2110 mhz 2140 mhz 2170 mhz aclr1 vs. output power vs. vcc wcdma, icq = 40 ma, 2140 mhz, 25 ? c -60 -55 -50 -45 -40 -35 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 26 v 28 v 30 v 32 v unconditionally stable circuit version of th is application circuit is available for download off of the website at: http://ww w.wj.com c19 1.8pf see note 6 c5 2.4pf see note 5 c22 1.2pf see note 3 v bias v pd gnd v cc c7 1000pf 3,3pf see note 4
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 7 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. temperature cw tone, vcc = 28v, icq = 40 ma, 2140 mhz 10 11 12 13 14 15 14 18 22 26 30 34 output power (dbm) gain (db) -40 ? c 25 ? c 85 ? c icc vs. output power vs. temperature cw tone, vcc = 28v, icq = 40 ma, 2140 mhz 0 25 50 75 100 125 150 14 18 22 26 30 34 output power (dbm) collector current (ma) -40 ? c 25 ? c 85 ? c efficiency vs. output power vs. temperature cw tone, vcc = 28v, icq = 40 ma, 2140 mhz 0 10 20 30 40 50 14 18 22 26 30 34 output power (dbm) collector efficiency (%) -40 ? c 25 ? c 85 ? c aclr1 vs. output power vs. temperature wcdma, vcc = 28v, icq = 40 ma, 2140 mhz -60 -55 -50 -45 -40 -35 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) -40 ? c 25 ? c 85 ? c icc vs. output power vs. temperature wcdma, vcc = 28v, icq = 40 ma, 2140 mhz 30 40 50 60 70 16 18 20 22 24 26 average output power (dbm) collector current (ma) -40 ? c 25 ? c 85 ? c efficiency vs. output power vs. temperature wcdma, vcc = 28v, icq = 40 ma, 2140 mhz 0 5 10 15 20 25 16 18 20 22 24 26 average output power (dbm) collector efficiency (%) -40 ? c 25 ? c 85 ? c gain vs. frequency vs. temperature wcdma, vcc = 28v, icq = 40 ma, +24 dbm pout 10 11 12 13 14 15 2110 2130 2150 2170 frequency (mhz) gain (db) -40 ? c 25 ? c 85 ? c aclr1 vs. output power vs. vcc wcdma, icq = 40 ma, 2140 mhz, 25 ? c -60 -55 -50 -45 -40 -35 16 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc wcdma, icq = 40 ma, 2140 mhz, 25 ? c 0 5 10 15 20 25 30 16 18 20 22 24 26 average output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v gain vs. output power vs. vcc cw tone, icq = 40 ma, 2140 mhz, 25 ? c 9 10 11 12 13 14 12 16 20 24 28 32 output power (dbm) gain (db) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc cw tone, icq = 40 ma, 2140 mhz, 25 ? c 0 10 20 30 40 50 60 12 16 20 24 28 32 output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v imd vs. output power cw 2-tone signal, 2140 mhz, ? f = 1 mhz, 28v, 40 ma icq, 25 ? c -80 -70 -60 -50 -40 22 24 26 28 30 32 output power, pep (dbm) imd (dbc) imd3l imd3u imd5
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 8 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 2110-2170 mhz application note: changing icq biasing configurations the ap601 can be configured to operate with lower bias current by varying the bias-adjust resistor ? r2. the recommended circuit configurations shown previously in this datasheet have the device operating with a 40 ma as the quiescent current (i cq ). this biasing level represents th e best tradeoff in terms of linearity and efficiency. lowering i cq will improve upon the efficiency of the device, but de graded linearity. increasing i cq has nominal improvement upon the linearity, but will degrade the device?s efficiency. measured data shown in the plots below represents the ap601 measured and configured for 2.14 ghz applications. it is expected that variation of the bias cu rrent for other frequency applications will produce similar performa nce results. icq (ma) r2 ( ? ) v pd (v) pin_v pd (v) 10 12k 5 2.50 20 5.44k 5 2.58 30 3.48k 5 2.63 40 2.61k 5 2.68 50 2.06k 5 2.72 60 1.67k 5 2.77 70 1.42k 5 2.81 80 1.22k 5 2.85 thermal rise vs. output power vs. icq vcc = 28v 0 20 40 60 80 14 16 18 20 22 24 26 output power (dbm) thermal rise ( ? c) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma c19 1.8pf c5 2.4pf c22 1.2pf v bias v pd gnd v cc c7 1000pf 3,3pf aclr1 vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ? c -60 -50 -40 -30 18 20 22 24 26 average output power (dbm) aclr1 (dbc) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma efficiency vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ? c 0 20 40 60 80 100 120 18 20 22 24 26 average output power (dbm) collector current (ma) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma efficiency vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ? c 0 5 10 15 20 25 30 18 20 22 24 26 average output power (dbm) collector efficiency (%) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma gain vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ? c 10 11 12 13 14 15 18 22 26 30 34 output power (dbm) gain (db) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma output power vs. input power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ? c 18 22 26 30 34 4 8 12 16 20 input power (dbm) output power (dbm) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma efficiency vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ? c 0 10 20 30 40 50 60 18 22 26 30 34 output power (dbm) collector efficiency (%) 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 9 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier 2320-2380 mhz wibro application circuit typical wcdma perf ormance at 25 c at a channel power of +23 dbm frequency 2350 mhz w-cdma channel power +23 dbm power gain 14 db aclr -50 dbc operating current, icc 50 ma collector efficiency 14 % output p1db +32.5 dbm quiescent current, icq 40 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. the center of c3 is placed at 0.050? (5.1 @ 2.35 ghz) from the edge of the ap601 (u1). 4. the center of c19 is placed at 0.650? (66.6 @ 2.35 ghz) from the edge of the ap601 (u1). 5. the center of c30 is placed at 0.110? (11.3 @ 2.35 ghz) from the center of c19. 6. the center of c31 is placed at 0.040? (4.1 @ 2.35 ghz) from the center of c19. 7. the bold-faced rf trace is for the dc bias feed. the stub?s length is approximately a ? . 2320-2380 mhz application circuit performance plots gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 10 11 12 13 14 15 22 24 26 28 30 32 34 output power (dbm) gain (db) 2320 mhz 2350 mhz 2380 mhz efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 40 ma, 25 ? c 0 10 20 30 40 50 60 22 24 26 28 30 32 34 output power (dbm) collector efficiency (%) 2320 mhz 2350 mhz 2380 mhz aclr1 vs. output power vs. frequency vcc = 28v, icq = 40 ma, 25 ? c -60 -55 -50 -45 -40 20 21 22 23 24 25 average output power (dbm) aclr1 (dbc) 2320 mhz 2350 mhz 2380 mhz wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db evm vs. output power vcc = 28v, icq = 40 ma, 25 ? c, 2350 mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 output power (dbm) evm (%) wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 40 ma, 25 ? c 0 5 10 15 20 25 20 21 22 23 24 25 average output power (dbm) collector efficiency (%) 2320 mhz 2350 mhz 2380 mhz wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db c3 1.6pf see note 3 v bias v pd gnd v cc c30 0.2pf see note 5 c7 1000pf c32 22pf w = .030? l = .590? c31 1.1pf see note 6 c19 0.6pf see note 4 22pf 22pf c33 c34 c31 c30 c19 c32 c33 c34
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 10 of 10 may 2007 ver 1 ap601 high dynamic range 1.8w 28v hbt amplifier AP601-F mechanical information this package is lead-free and rohs -compliant. it is compatible with both lead-fr ee (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the pins is ann ealed matte tin over copper. drawing outline drawing mounting configuration / land pattern thermal specifications parameter rating thermal resistance, jc referenced from peak junction to the center of the bottomside ground paddle 33.3 c / w junction temperature, t j for 10 6 hours mttf 192 oc max junction temperature, t j,max for catastrophic failure 250 oc product marking the component will be laser marked with a ?AP601-F? product label wi th an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. functional pin layout pin function 1 pin_vbias 2, 3, 7, 8, 12, 13 n/c 4, 5, 6 rf in 9, 10, 11 rf output / vcc 14 pin_vpd backside paddle gnd msl / esd rating esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mttf vs. junction temperature 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 120 140 160 180 200 junction temperature (c) mttf (hours)
|
