data sheet mos field effect transistor 3sk254 features low v dd use : (v ds = 3.5 v) driving battery low noise figure : nf1 = 2.0 db typ. (f = 470 mhz) nf2 = 0.8 db typ. (f = 55 mhz) high power gain : g ps = 19.0 db typ. (f = 470 mhz) suitable for use as rf amplifier in catv tuner. automatically mounting : embossed type taping small package : 4 pins super mini mold absolute maximum ratings (t a = 25 c) drain to source voltage v dsx 18 v gate1 to source voltage v g1s 8 *1 v gate2 to source voltage v g2s 8 *1 v gate1 to drain voltage v g1d 18 v gate2 to drain voltage v g2d 18 v drain current i d 25 ma total power dissipation p d 130 *2 mw channel temperature t ch 125 c storage temperature t stg ?5 to +125 c *1: r l 10 k ? *2: free air precaution: avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. rf amplifier for catv tuner n-channel si dual gate mos field-effect transistor 4 pins super mini mold 2.10.2 1.250.1 2 3 1 4 2.00.2 1.25 0.65 0.60 +0.1 0.05 0.3 +0.1 0.05 0.4 (1.3) +0.1 0.05 0.3 +0.1 0.05 0.3 0.90.1 0.3 0 to 0.1 +0.1 0.05 0.15 package dimensions (unit: mm) pin connections 1. source 2. drain 3. gate2 4. gate1 document no. pu10033ej01v0ds (1st edition) (previous no. p10585ej2v0ds00) date published october 2001 cp(k) printed in japan ? nec corporation 1993 ? nec compound semiconductor devices 2001 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. the mark shows major revised points.
3sk254 2 data sheet pu10033ej01v0ds electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions drain to source breakdown voltage bv dsx 18 v v g1s = v g2s = ? v, i d = 10 a drain current i dsx 0.1 5.0 ma v ds = 3.5 v, v g2s = 3 v, v g1s = 0.5 v gate1 to source cutoff voltage v g1s(off) ?.0 0 +1.0 v v ds = 3.5 v, v g2s = 3 v, i d = 10 a gate2 to source cutoff voltage v g2s(off) 0 0.5 1.0 v v ds = 3.5 v, v g1s = 3 v, i d = 10 a gate1 reverse current i g1ss 20 na v ds = 0, v g2s = 0, v g1s = 6 v gate2 reverse current i g2ss 20 na v ds = 0, v g1s = 0, v g2s = 6 v forward transfer admittance |y fs |141823ms v ds = 3.5 v, v g2s = 3 v, i d = 7 ma f = 1 khz input capacitance c iss 2.4 2.9 3.4 pf v ds = 3.5 v, v g2s = 3 v, i d = 7 ma output capacitance c oss 0.9 1.2 1.5 pf f = 1 mhz reverse transfer capacitance c rss 0.01 0.03 pf power gain g ps 16 19 22 db v ds = 3.5 v, v g2s = 3 v, i d = 7 ma noise figure 1 nf1 2.0 3.0 db f = 470 mhz noise figure 2 nf2 0.8 2.3 db v ds = 3.5 v, v g2s = 3 v, i d = 7 ma f = 55 mhz i dsx classification rank u1e marking u1e i dsx (ma) 0.1 to 5.0
3sk254 3 data sheet pu10033ej01v0ds 3 typical characteristics (t a = 25 ?c) total power dissipation vs. ambient temperature t a ambient temperature c p d total power dissipation mw 0 drain current vs. drain to source voltage v ds drain to source voltage v i d drain current ma drain current vs. gate1 to source voltage v g1s gate1 to source voltage v i d drain current ma 0 forward transfer admittance vs. gate1 to source voltage v g1s gate1 to source voltage v |y fs | forward transfer admittance ms forward transfer admittance vs. drain current i d drain current ma |y fs | forward transfer admittance ms input capacitance vs. gate2 to source voltage v g2s gate2 to source voltage v c iss input capacitance pf 25 50 75 100 125 v g2s = 3 v v g1s = 1.6 v 0 5 10 15 20 25 510 v ds = 3.5 v v g2s = 3.5 v 5 10 15 20 25 0.5 1.0 1.5 2.0 2.5 v ds = 3.5 v f = 1 khz 0 8 16 24 32 40 0.5 1.0 1.5 2.0 2.5 v ds = 3.5 v f = 1 khz 0 8 16 24 32 40 v g2s = 3.5 v 3.0 v 2.5 v 1.5 v 1.0 v i d = 7 ma (at v ds = 3.5 v, v g2s = 3 v) f = 1 mhz 1.0 0 1.0 2.0 3.0 4.0 1.0 2.0 3.0 4.0 3.0 v 2.5 v 2.0 v 1.5 v 1.0 v v g2s = 3.5 v 2.0 v 5.0 0 1.4 v 1.2 v 1.0 v 0.8 v 0.6 v 3.0 v 2.5 v 2.0 v 1.5 v 1.0 v 4 8 12 16 20 130 mw 100 200
3sk254 4 data sheet pu10033ej01v0ds i d = 7 ma (at v ds = 3.5 v, v g2s = 3.0 v) f = 1 mhz output capacitance vs. gate2 to source voltage v g2s gate2 to source voltage v c oss output capacitance pf 1.0 power gain and noise figure vs. gate2 to source voltage v g2s gate2 to source voltage v g ps power gain db 0 0 1.0 2.0 3.0 4.0 1.0 20 1.0 2.0 3.0 4.0 0 0.5 1.0 1.5 2.0 2.5 nf noise figure db 10 0 10 20 i d = 7 ma (at v ds = 3.5 v, v g2s = 3.0 v) f = 470 mhz g ps nf 10 5 0 i d = 7 ma (at v ds = 3.5 v, v g2s = 3.0 v) f = 1 mhz
3sk254 5 data sheet pu10033ej01v0ds 5 g ps and nf test circuit at f = 470 mhz v g2s 22 k ? 1 000 pf ferrite beads 1 000 pf input 1 000 pf 40 pf 22 k ? 1 000 pf v g1s 15 pf 15 pf l 2 l 1 1 000 pf 40 pf output l 3 1 000 pf v ds 50 ? 50 ? l 1 : 1.2 mm u.e.w 5 mm 1t l 2 : 1.2 mm u.e.w 5 mm 1t l 3 : rec 2.2 h nf test circuit at f = 55 mhz v g2s v ds input 50 ? 3.3 k ? 27 pf 1 500 pf 1 000 pf 47 k ? 1 000 pf 47 k ? 2.2 k ? rfc ferrite beads 1 500 pf 27 pf 3.3 k ? output 50 ? v g1s
3sk254 6 data sheet pu10033ej01v0ds m8e 00. 4 - 0110 the information in this document is current as of october, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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