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  TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 1 (12) www.vishay.com document number 82514 serial infrared transceiver sir, 115.2 kbit/s, 2.7 v to 5.5 v operation description the TFDU4100 is a part of the 4000 family of low current consumption infrared transceiver modules compliant to the irda standard for serial infrared (sir) data communication, supporting irda speeds up to 115.2 kbit/s. integrated within the transceiver modules are a photo pin diode, infrared emitter (ired), and a lowpower analog control ic to provide a total frontend solution in a single package. the transceivers are capable of directly interfacing with a wide variety of i/o chips which perform the pulsewidth modulation/demodulation function, including vishay semiconductors' toim4232. at a minimum, a current limiting resistor in series with the infrared emitter and a vcc bypass capacitor are the only external components required to implement a complete solution. features  compliant to the latest irda physical layer specification (up to 115.2 kbit/s), hpsir  and tv remote control  for 3.0 v and 5 v applications  2.7 to 5.5 v wide operating voltage range  lowpower consumption (1.3 ma supply current)  power sleep mode through v cc1 /sd pin (5 na sleep current)  surface mount package universal (9.7 4.7 4.0 mm 3 )  open collector receiver output, with 20 k  internal pullup  babyface (universal) package capable of surface mount solderability to side and top view orientation  directly interfaces with various super i/o and controller devices and vishay semiconductors- toim3232 i/os  builtin emi protection no external shielding necessary  only one external component required  few external components required  backward compatible to all vishay semiconductors sir infrared transceivers  split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs applications  notebook computers, desktop pcs, palmtop computers (win ce, palm pc), pdas  digital still and video cameras  printers, fax machines, photocopiers, screen projectors  telecommunication products (cellular phones, pagers)  internet tv boxes, video conferencing systems  external infrared adapters (dongles)  medical and industrial data collection devices
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 2 (12) package baby face (universal) weight 020g ordering information part number qty / reel description TFDU4100tr3 1000 pcs oriented in carrier tape for side view surface mounting TFDU4100tt3 1000 pcs oriented in carrier tape for top view surface mounting functional block diagram comparator amplifier agc logic driver open collector driver v cc1 /sd sc txd gnd rxd 14876 ired anode ired cathode v cc2 r1 figure 1. functional block diagram
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 3 (12) www.vishay.com document number 82514 pin description pin number function description i/o active 1 ired anode ired anode, should be externally connected to v cc2 through a current control resistor 2 ired cathode ired cathode, internally connected to driver transistor 3 txd transmit data input i high 4 rxd received data output, open collector. no external pullup or pulldown resistor is required (20 k  resistor internal to device). pin is inactive during transmission. o low 5 nc do not connect 6 v cc1 / sd supply voltage / shutdown 7 sc sensitivity control i high 8 gnd ground babyface (universal) ired detector figure 2. pinnings definitions : in the vishay transceiver data sheets the following nomenclature is used for defining the irda operating modes: sir: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version irphy 1.0 mir: 576 kbit/s to 1152 kbit/s fir: 4 mbit/s vfir: 16 mbit/s mir and fir were implemented with irphy 1.1, followed by irphy 1.2, adding the sir low power standard. irphy 1.3 extended the low power option to mir and fir and vfir was added with irphy 1.4.a new version of the standard in any case obsoletes the former version. with introducing the updated versions the old versions are obsolete. therefore the only valid irda standard is the actual version irphy 1.4 (in oct. 2002).
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 4 (12) absolute maximum ratings reference point pin gnd unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit supply voltage range 0 v v cc2 6 v v cc1 0.5 6 v yg g 0 v v cc1 6 v v cc2 0.5 6 v input currents for all pins, except ired anode pin 10 ma output sink current 25 ma power dissipation see derating curve p d 200 mw junction temperature t j 125 c ambient temperature range (operating) t amb 25 +85 c storage temperature range t stg 25 +85 c soldering temperature see recommended sol- der profile 215 240 c average ired current i ired (dc) 100 ma repetitive pulsed ired current t < 90 m s, t on < 20% i ired (rp) 500 ma ired anode voltage v ireda 0.5 6 v transmitter data input voltage v txd 0.5 v cc1 +0.5 v receiver data output voltage v rxd 0.5 v cc1 +0.5 v parameters test conditions symbol min. typ. max. unit virtual source size method: (11/e) encircled energy d 2.5 2.8 mm maximum intensity for class 1 iec608251 or en608251, edition januar 2001 i e *) (500**) mw/sr *) the device is a aclass 1o device **) irda specifies the max. intensity with 500 mw/sr
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 5 (12) www.vishay.com document number 82514 electrical characteristics t amb = 25  c, v cc = 2.7 v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions / pins symbol min. typ. max. unit transceiver supply voltage receive mode transmit mode, r2 = 47  (see recommended application circuit) v cc1 v cc2 2.7 2.0 5.5 5.5 v v supply current pin v cc1 (receive mode) v cc1 = 5.5 v v cc1 = 2.7 v i cc1 (rx) 1.3 1.0 2.5 1.5 ma ma supply current pin v cc1 (avg) (transmit mode) i ired = 210 ma (at ired anode pin) v cc1 = 5.5 v v cc1 = 2.7 v i cc1 (tx) 5.0 3.5 5.5 4.5 ma ma leakage current of ir emitter, ired anode pin v cc1 = off, t xd = low, v cc2 = 6 v, t = 25 to 85 c i l (ireda) 0.005 0.5 m a transceiver power on settling time t pon 50 m s optoelectronic characteristics t amb = 25  c, v cc = 2.7 v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit receiver minimum detection ber = 10 8 (irda specification) threshold irradiance  = 15 , sir mode, sc = low e e 20 35 mw/m 2  = 15 , sir mode, sc = high e e 6 10 15 mw/m 2 maximum detection  = 90 , sir mode, v cc1 = 5 v e e 3.3 5 kw/m 2 threshold irradiance  = 90 , sir mode, v cc1 = 3 v e e 8 15 kw/m 2 logic low receiver input irradiance sc = high or low e e 4 mw/m 2 output voltage rxd active, c = 15 pf, r = 2.2 k  v ol 0.5 0.8 v g nonactive, c = 15 pf, r = 2.2 k  v oh v cc1 0.5 v output current rxd v ol < 0.8 v i ol 4 ma rise time rxd c = 15 pf, r = 2.2 k  t r (rxd) 20 1400 ns fall time rxd c = 15 pf, r = 2.2 k  t f (rxd) 20 200 ns pulse width rxd output input pulse width = 1.6 m s, 115.2 kbit/s t pw 1.41 8 m s jitter, leading edge of output signal over a period of 10 bit, 115.2 kbit/s t i 2 m s latency t l 100 500 m s
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 6 (12) optoelectronic characteristics t amb = 25  c, v cc = 2.7 v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit transmitter ired operating current ired operating current can be adjusted by variation of r1. current limiting resistor is in series to ired: r1 = 14 w, v cc2 = 5.0 v i ired 0.2 0.28 a logic low transmitter input voltage v il (txd) 0 0.8 v logic high transmitter input voltage v ih (txd) 2.4 v cc1 +0.5 v output radiant intensity in agreement with iec825 eye safety limit, if current limiting resistor is in series to ired: r1 = 14 w, v cc2 = 5.0 v, a = 15  i e 45 140 200 mw/sr txd logic low level i e 0.04 mw/sr angle of half intensity a 24  peak wavelength of emission  p 880 900 nm halfwidth of emission spectrum 60 nm optical rise time, fall time t ropt, t fopt 200 600 ns optical overshoot 25 % rising edge peakto- peak jitter of optical output pulse over a period of 10 bits, independent of information content 0.2  s
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 7 (12) www.vishay.com document number 82514 recommended circuit diagram the only required components for designing an irda 1.2 compatible design using vishay semiconductors sir transceivers are a current limiting resistor to the ired. however, depending on the entire system design and board layout, additional components may be required (see figure 3). it is recommended that the capacitors c1 and c2 are positioned as near as possible to the transceiver power supply pins. a tantalum capacitor should be used for c1, while a ceramic capacitor should be used for c2 to suppress rf noise. also, when connecting the described circuit to the power supply, low impedance wiring should be used. ired cathode ired anode rxd v cc1 /sd gnd txd sc nc tfdx4x00 c2 c1 r2 r1 v cc2 rxd gnd v cc1 sc txd note: outlined components are optional depending on the quality of the power supply figure 3. recommended application circuit r1 is used for controlling the current through the ir emitter. for increasing the output power of the ired, the value of the resistor should be reduced. similarly, to reduce the output power of the ired, the value of the resistor should be increased. for typical values of r1 (see figures 4 and 5), e.g. for irda compliant operation (v cc2 = 5 v 5%), a current control resistor of 14 w is recommended. the upper drive current limitation is dependent on the duty cycle and is given by the absolute maximum ratings on the data sheet and the eye safety limitations given by iec8251. r2, c1 and c2 are optional and dependent on the quality of the supply voltage v cc1 and injected noise. an unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. 0 40 80 120 160 200 240 280 320 360 400 440 480 6 8 10 12 14 16 current control resistor (  ) 14377 intensity (mw/sr) v cc = 5.25 v, max. efficiency, center, min. v f , min. v cesat v cc = 4.75 v, min. ef ficiency, 15 off axis, max. v f , max. v cesat figure 4. ie vs. r1 0 40 80 120 160 200 240 280 320 360 400 440 480 520 560 600 640 680 720 760 012345678 serial resistor (  ) 14378 intensity (mw/sr) v cc =2.7v, min. intensity  15 off axis, max. v f , max. v cesat v cc =3.3v, max. intensity on axis, min. v f , min. v cesat figure 5. ie vs. r1 table 1. recommended application circuit components component recommended value vishay part number c1 4.7  f, tantalum 293d 475x9 016b 2t c2 0.1 m f, ceramic vj 1206 y 104 j xxmt r1 14 w , 0.25 w (recommended using two 7 w , 0.125 w resistors in series) crcw12067r00frt1 r2 47 w , 0.125 w crcw120647r0frt1
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 8 (12) the sensitivity control (sc) pin allows the minimum detection irradiance threshold of the transceiver to be lowered when set to a logic high. lowering the irradiance threshold increases the sensitivity to infrared signals and increases transmission range up to 3 meters. however, setting the pin sc to logic high also makes the transceiver more susceptable to transmission errors due to an increased sensitivity to fluorescent light disturbances. it is recommended to set the pin sc to logic low or left open if the increased range is not required or if the system will be operating in bright ambient light. the guide pins on the side-view and top-view packages are internally connected to ground but should not be connected to the system ground to avoid ground loops. they should be used for mechanical purposes only and should be left floating. shutdown the internal switch for the ired in vishay semicon- ductors sir transceivers is designed to be operated like an open collector driver. thus, the v cc2 source can be an unregulated power supply while only a well regulated power source with a supply current of 1.3 ma connected to v cc1 /sd is needed to provide power to the remainder of the transceiver circuitry in receive mode. in transmit mode, this current is slightly higher (approximately 4 ma average at 3 v supply current) and the voltage is not required to be kept as stable as in receive mode. a voltage drop of v cc1 is acceptable down to about 2.0 v when buffering the voltage directly from the pin v cc1 to gnd see figure 3). this configuration minimizes the influence of high current surges from the ired on the internal analog control circuitry of the transceiver and the application circuit. also board space and cost savings can be achieved by eliminating the additional linear regulator normally needed for the ired's high current requirements. the transceiver can be very efficiently shutdown by keeping the ired connected to the power supply v cc2 but switching off v cc1 /sd. the power source to v cc1/sd can be provided directly from a microcontroller (see figure 6). in shutdown, current loss is realized only as leakage current through the current limiting resistor to the ired (typically 5 na). the settling time after switching v cc1/sd on again is approximately 50  s. vishay semiconductor's toim3232 interface circuit is designed for this shutdown feature. the v cc_sd , s0 or s1 outputs on the toim3232 can be used to power the transceiver with the necessary supply current. if the microcontroller or the microprocessor is unable to drive the supply current required by the transceiver, a lowcost sot23 pnp transistor can be used to switch voltage on and off from the regulated power supply (see figure 7). the additional component cost is minimal and saves the system designer additional power supply costs. power supply TFDU4100 (note: typical values listed) receive mode @ 5 v: i ired = 210 ma, i s = 1.3 ma @ 2.7 v: i ired = 210 ma, i s = 1.0 ma transmit mode @ 5 v: i ired = 210 ma, i s = 5 ma (avg.) @ 2.7 v: i ired = 210 ma, i s = 3.5 ma (avg.) regulated power supply 50 ma ired anode v cc1 /sd 14878 microcontroller or microprocessor 20 ma i ired r1 i s + figure 6. power supply TFDU4100 (note: typical values listed) receive mode @ 5 v: i ired = 210 ma, i s = 1.3 ma @ 2.7 v: i ired = 210 ma, i s = 1.0 ma transmit mode @ 5 v: i ired = 210 ma, i s = 5 ma (avg.) @ 2.7 v: i ired = 210 ma, i s = 3.5 ma (avg.) regulated power supply 50 ma ired anode v cc1 /sd 14879 microcontroller or microprocessor 20 ma i ired r1 i s + figure 7.
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 9 (12) www.vishay.com document number 82514 recommended smd pad layout the leads of the device should be soldered in the center position of the pads. 7 x 1 = 7 8 1 1 16524 2.5 ( 2.0) 0.6 ( 0.7) figure 8. TFDU4100, babyface (universal) note: leads of the device should be at least 0.3 mm within the ends of the pads recommended solder profile time ( s ) temperature ( c ) 14874 0 30 60 90 120 150 180 210 240 0 50 100 150 200 250 300 350 2 - 4 c/s 10 s max. @ 230 c 90 s max. 120 - 180 s 2 - 4 c/s figure 9. recommended solder profile current derating diagram 0 100 200 300 400 500 600 40 20 0 20 40 60 80 100 120 140 peak operating current ( ma ) temperature ( 5c ) 14880 current derating as a function of the maximum forward current of ired. maximum duty cycle: 25%. figure 10. current derating diagram
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 10 (12) TFDU4100 babyface (universal) package (mechanical dimensions) 12249
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 11 (12) www.vishay.com document number 82514 revision history: a1.1, 30/10/2002 technically unchanged data sheet of TFDU4100 extracted from the latest vers. a1.1 4000series data sheet.
TFDU4100 vishay semiconductors rev. a1.1, 12-dec-02 www.vishay.com document number 82514 12 (12) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423


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