M28W231 2 mbit (256kb x8, boot block) low voltage flash memory data briefing 2.7v to 3.6v supply voltage 12v 5% programming voltage fast access time: 100ns program/erase controller (p/e.c.) automatic static mode memory erase in blocks boot block (top location) with hardware write and erase protection parameter and main blocks 100,000 program/erase cycles low power consumption 20 years data retention defectivity below 1ppm/year electronic signature manufacturer code: 20h device code: e5h description the M28W231 flash memory is a non-volatile memorythat may be erased electricallyat the block level and programmed by byte. the interface is directly compatible with most microprocessors. tsop40 (10 x 20mm) package is used. b28w231/808 1/2 complete data available on data-on-disc cd-rom or at www.st.com a0-a17 address inputs dq0-dq7 data input / outputs e chip enable g output enable w write enable wp write protect rp reset/power down/boot block unlock v pp program & erase supply voltage v cc supply voltage v ss ground signal names ai02003b 18 a0-a17 w dq0-dq7 v pp v cc M28W231 g e v ss 8 rp wp logic diagram tsop40 (n) 10 x 20mm
2/2 example: M28W231 -100 n 1 tr operating voltage w 2.7v to 3.6v array matrix 3 top boot speed -90 (1) 90ns -120 120ns -150 150ns -180 180ns package n tsop40 10 x 20mm temp. range 1 0 to 70 c 5 20 to 85 c 6 40 to 85 c option tr tape & reel packing notes: 1. this speed is obtained with a power supply of v cc = 3.3v 0.3v and a load capacitance at 30pf. devices are shipped from the factory with the memory content erased (to ffh). ordering information scheme for a list of available options or for further informa- tion on any aspect of this device, please contact the stmicroelectronics sales office nearestto you. M28W231 v ss dq1 dq2 a7 a1 e a4 a3 a11 a17 a14 a15 dq7 a9 a16 g nc dq5 dq3 nc v cc dq4 dq6 a8 w nc v pp rp ai02004b M28W231 (normal) 10 1 11 20 21 30 31 40 a0 a12 a13 nc a10 a5 a6 v cc dq0 v ss a2 wp tsop pin connections warning: nc = not connected.
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