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1/11 may 2004 stb60nh02l n-channel 24v - 0.0085 ? - 60a d2pak stripfet? iii power mosfet typical r ds (on) = 0.0085 ? @ 10 v typical r ds (on) = 0.012 ? @ 5 v r ds(on) * qg industry?s benchmark conduction losses reduced switching losses reduced low threshold device surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix ?t4?) description the stb60nh02l utilizes the latest advanced design rules of st?s proprietary stripfet? technology. this is suitable fot the most demanding dc-dc converter application where high efficiency is to be achieved. applications specifically designed and optimised for high efficiency dc/dc convertes type v dss r ds(on) i d stb60nh02l 24 v < 0.0105 ? 60 a 1 3 d 2 pak to-263 (suffix ?t4?) internal schematic diagram ordering information absolute maximum ratings sales type marking package packaging STB60NH02LT4 b60nh02l to-263 tape & reel symbol parameter value unit v spike(1) drain-source voltage rating 30 v v ds drain-source voltage (v gs = 0) 24 v v dgr drain-gate voltage (r gs = 20 k ? ) 24 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 60 a i d drain current (continuous) at t c = 100c 43 a i dm (2) drain current (pulsed) 240 a p tot total dissipation at t c = 25c 70 w derating factor 0.47 w/c e as (3) single pulse avalanche energy 280 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature
stb60nh02l 2/11 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (4 ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 2.14 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25 ma, v gs = 0 24 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 11.82.5v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a v gs = 5 v i d = 15 a 0.0085 0.012 0.0105 0.020 ? ? symbol parameter test conditions min. typ. max. unit g fs (4) forward transconductance v ds = 15 v i d =25 a 27 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v f = 1 mhz v gs = 0 1400 400 55 pf pf pf r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain 1 ?
3/11 stb60nh02l switching on switching off source drain diode (1) garanted when external rg=4.7 ? and t f < t fmax . (4) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area (5) q oss = c oss * ? v in , c oss = c gd + c ds . see appendix a ( 3 ) starting t j = 25 o c, i d = 25a, v dd = 15v . . symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 10 v i d = 30 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 10 130 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10 v i d = 60 a v gs = 10 v 24 5 3.4 32 nc nc nc q oss (5) output charge v ds = 16 v v gs = 0 v 9.4 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 30 a r g =4.7 ?, v gs = 10 v (resistive load, figure 3) 27 16 21.6 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 60 240 a a v sd (4) forward on voltage i sd = 30 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a di/dt = 100a/s v dd = 18 v t j = 150c (see test circuit, figure 5) 36 36 2 48 48 ns nc a electrical characteristics (continued) safe operating area thermal impedance
stb60nh02l 4/11 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/11 stb60nh02l normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature . .
stb60nh02l 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 stb60nh02l dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 4 0 4 d 2 pak mechanical data
stb60nh02l 8/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ?t4?)* d 2 pak footprint tape mechanical data
9/11 stb60nh02l
stb60nh02l 10/11
11/11 stb60nh02l i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com

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