up to 6 ghz medium power silicon bipolar transistor technical data features high output power: 21.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz 9.5 db typical g 1 db at 4.0 ghz low noise figure: 1.9 db typical nf o at 2.0 ghz high gain-bandwidth product: 8.0 ghz typical f t cost effective ceramic microstrip package at-42035 35 micro-x package description agilent s at-42035 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the at-42035 is housed in a cost effective surface mount 100 mil micro-x package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 ? up to 1 ghz, makes this device easy to use as a low noise amplifier. the at-42035 bipolar transistor is fabricated using agilent s 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
2 at-42035 absolute maximum ratings [1] absolute symbol parameter units maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 600 t j junction temperature c 150 t stg storage temperature [4] c -65 to 150 thermal resistance [2,5] : jc = 175 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.7 mw/ c for t c > 95 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. see measure- ments section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 10.0 11.0 f = 4.0 ghz 5.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 21.0 v ce = 8 v, i c = 35 ma f= 4.0 ghz 20.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 2.0 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 13.5 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v a 0.2 i ebo emitter cutoff current; v eb = 1 v a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.28 notes: 1. for this test, the emitter is grounded.
3 at-42035 typical performance, t a = 25 c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 304050 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 at-42035 typical scattering parameters, common emitter, z o = 50 ? , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14 0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27 1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29 1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33 2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38 2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42 3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51 3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63 4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72 4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80 5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87 5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94 6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105 at-42035 typical scattering parameters, common emitter, z o = 50 ? , t a =25 c, v ce =8 v, i c = 35 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22 0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25 1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26 1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30 2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36 2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40 3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49 3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61 4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71 4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78 5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84 5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91 6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102 a model for this device is available in the device models section. at-42035 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o opt ghz db mag ang r n /50 0.1 1.0 .04 10 0.13 0.5 1.1 .04 66 0.12 1.0 1.3 .07 150 0.12 2.0 2.0 .20 -178 0.12 4.0 3.0 .51 -110 0.36
5 35 micro-x package dimensions 13 4 2 emitter dia. emitter collector base .085 2.15 016 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25 420
www.semiconductor.agilent.com data subject to change. copyright ? 2001 agilent technologies, inc. obsoletes 5965-8911e october 31, 2001 5988-4734en
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