ds30274 rev. a-2 1 of 3 bc847at, bt, ct bc847at, bt, ct npn small signal surface mount transistor features maximum ratings @ t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6.0 v collector current i c 100 ma power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient r ja 833 c/w operating and storage temperature range t j ,t stg -55 to +150 c epitaxial die construction complementary pnp type available (bc857at,bt,ct) ultra-small surface mount package type marking bc847a 1e bc847b 1f bc847c 1m case: sot-523, molded plastic terminals: solderable per mil-std-202, method 208 terminal connections: see diagram weight: 0.002 grams (approx.) mechanical data a b c c b top view g m l j d h n k e notes: 1. device mounted on fr-4 pc board with recommended pad layout. 2. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. new product sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 all dimensions in mm ordering information device packaging shipping bc847at-7 sot-523 3000/tape & reel BC847BT-7 sot-523 3000/tape & reel bc847ct-7 sot-523 3000/tape & reel (note 2)
ds30274 rev. a-2 2 of 3 bc847at, bt, ct electrical characteristics @ t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition dc current gain (note 3) current gain a b c current gain a b c h fe 110 200 420 150 270 290 520 220 450 800 v ce = 5.0v, i c = 2.0ma collector-emitter saturation voltage (note 3) v ce(sat) 250 600 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage (note 3) v be(sat) 700 900 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter voltage (note 3) v be 580 660 700 770 mv v ce = 5.0v, i c = 2.0ma v ce =5.0v, i c = 10ma collector-emitter cutoff current (note 3) i cbo i cbo 15 5.0 na a v cb = 30v v cb = 30v, t a = 150c gain bandwidth product f t 100 mhz v ce = 5.0v, i c = 10ma, f = 100mhz output capacitance c obo 4.5 pf v cb = 10v, f = 1.0mhz bc847bt noise figure bc847ct nf 10 4.0 db v ce = 5v, r s = 2.0k f = 1.0khz, bw = 200hz new product notes: 3. short duration test pulse used to minimize self-heating effect.
ds30274 rev. a-2 3 of 3 bc847at, bt, ct 1 10 100 1000 1.0 10 100 0.1 0.01 h dc current gain fe, i , collector current (ma) fi g . 2, dc current gain vs collector current c v=5v ce 100 c t=25c a -50 c 0 0.1 0.2 0.3 0.4 0 .5 0.1 1.0 10 100 v , collect or saturation vol tage (v) ce i , collector current (ma) fi g . 3, collector saturation volta g e vs collector current c i/i=20 cb t = 100 c a 25 c -50 c 10 100 1000 0.1 1.0 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) fi g . 4, gain bandwidth product vs collector current c t=25c a v = 10v ce 5v 2v 0 100 150 50 200 2 5 0 0 100 200 p , power dissip ation (mw) d fi g . 1, power deratin g curve t , ambient temperature (c) a (see note 1) notes: 1. device mounted on fr-4 pc board with recommended pad layout. new product
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