? semiconductor components industries, llc, 2008 july, 2008 ? rev. 1 1 publication order number: nsbc114epdp6/d nsbc114epdp6t5g series preferred devices dual digital transistors (brt) complementary silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor t ransistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the nsbc114epdp6t5g series, two complementary brt devices are housed in the sot ? 963 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? available in 4 mm, 8000 units tape and reel ? these are pb ? free devices ? these are halide ? free devices maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com marking diagram device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. nsbc114epdp6t5g sot ? 963 (pb ? free) 8000 / tape & reel x = specific device code m = date code = pb ? free package sot ? 963 case 527ad xm 1
nsbc114epdp6t5g series http://onsemi.com 2 thermal characteristics characteristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) derate above 25 c p d 269 2.2 mw mw/ c thermal resistance (note 2) junction-to-ambient r ja 464 c/w dual heated (note 3) total device dissipation t a = 25 c (note 1) derate above 25 c p d 339 2.7 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 369 c/w total device dissipation t a = 25 c (note 2) derate above 25 c p d 408 3.3 mw mw/ c thermal resistance (note 2) junction-to-ambient r ja 306 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces, still air. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces, still air. 3. dual heated values assume total power is sum of two equally powered channels. device marking and resistor values device package marking (clockwise rotation) r1 (k ) r2 (k ) nsbc114epdp6t5g sot ? 963 l 10 10 nsbc124epdp6t5g sot ? 963 r (90 ) 22 22 NSBC144EPDP6T5G sot ? 963 k (180 ) 47 47 nsbc114ypdp6t5g sot ? 963 q (90 ) 10 47 nsbc115tpdp6t5g sot ? 963 j (180 ) 100 nsbc123tpdp6t5g sot ? 963 a (180 ) 2.2 nsbc143epdp6t5g sot ? 963 v (90 ) 4.7 4.7 nsbc143zpdp6t5g sot ? 963 y (90 ) 4.7 47 nsbc144wpdp6t5g sot ? 963 t (90 ) 47 22 nsbc123jpdp6t5g sot ? 963 d (180 ) 2.2 47
nsbc114epdp6t5g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) tcharacteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current nsbc114epdp6t5g (v eb = 6.0 v, i c = 0) nsbc124epdp6t5g nsbc144epdp5t5g nsbc114ypdp6t5g nsbc115tpdp6t5g nsbc123tpdp6t5g nsbc143epdp6t5g nsbc143zpdp6t5g nsbc144wpdp6t5g nsbc123jpdp6t5g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.1 4.0 1.5 0.18 0.13 0.2 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 4) dc current gain nsbc114epdp6t5g (v ce = 10 v, i c = 5.0 ma) nsbc124epdp6t5g nsbc144epdp5t5g nsbc114ypdp6t5g nsbc115tpdp6t5g nsbc123tpdp6t5g nsbc143epdp6t5g nsbc143zpdp6t5g nsbc144wpdp6t5g nsbc123jpdp6t5g h fe 35 60 80 80 160 160 15 80 80 80 60 100 140 140 350 350 30 200 140 140 ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) nsbc114epdp6t5g nsbc124epdp6t5g NSBC144EPDP6T5G nsbc114ypdp6t5g nsbc144wpdp6t5g nsbc123jpdp6t5g (i c = 10 ma, i b = 1 ma) nsbc115tpdp6t5g nsbc143epdp6t5g nsbc143zpdp6t5g nsbc123tpdp6t5g v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) nsbc114epdp6t5g/nsbc124epdp6t5g nsbc114ypdp6t5g/nsbc123tpdp6t5g nsbc143epdp6t5g/nsbc143zpdp6t5g nsbc123jpdp6t5g (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) nsbc144wpdp6t5g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) NSBC144EPDP6T5G/nsbc115tpdp6t5g v ol ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) nsbc114epdp6t5g/nsbc124epdp6t5g NSBC144EPDP6T5G/nsbc114ypdp6t5 nsbc143zpdp6t5g/nsbc144wpdp6t5g nsbc123jpdp6t5g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) nsbc123tpdp6t5g/nsbc115tpdp6t5g nsbc143epdp6t5g v oh 4.9 4.9 4.9 4.9 4.9 4.9 ? ? ? ? ? ? ? ? ? ? ? ? vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsbc114epdp6t5g series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) tcharacteristic unit max typ min symbol on characteristics (note 4) input resistor nsbc114epdp6t5g nsbc124epdp6t5g nsbc144epdp5t5g nsbc114ypdp6t5g nsbc115tpdp6t5g nsbc123tpdp6t5g nsbc143epdp6t5g nsbc143zpdp6t5g nsbc144wpdp6t5g nsbc123jpdp6t5g r1 7.0 15.4 32.9 7.0 70 1.54 3.3 3.3 15.4 1.54 10 22 47 10 100 2.2 4.7 4.7 47 2.2 13 28.6 61.1 13 130 2.86 6.1 6.1 28.6 2.86 k resistor ratio nsbc114epdp6t5g nsbc124epdp6t5g nsbc144epdp5t5g nsbc114ypdp6t5g nsbc115tpdp6t5g nsbc123tpdp6t5g nsbc143epdp6t5g nsbc143zpdp6t5g nsbc144wpdp6t5g nsbc123jpdp6t5g r1/r2 0.8 0.8 0.8 0.17 ? ? 0.8 0.055 1.7 0.038 1.0 1.0 1.0 0.21 ? ? 1.0 0.1 2.1 0.047 1.2 1.2 1.2 0.25 ? ? 1.2 0.185 2.6 0.056 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsbc114epdp6t5g series http://onsemi.com 5 typical electrical characteristics ? nsbc114epdp6 npn transistor 0.01 0.10 1.0 0 5 10 15 20 25 30 35 40 45 50 figure 1. v ce(sat) vs. i c i c , collector current (ma) v ce(sat) , collector ? to ? emitter saturation voltage (v) t a =25 c t a = 150 c t a = ? 55 c 1.0 10 100 1000 0.1 1 10 100 v ce = 10 v 150 c 25 c ? 55 c figure 2. dc current gain i c , collector current (ma) h fe , dc current gain 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 0 5 10 15 20 25 30 35 40 45 50 figure 3. output capacitance v cb , collector base voltage (v) c obo , output capacitance (pf) 0.01 0.1 1 10 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 150 c 25 c ? 55 c i c , collector current (ma) figure 4. output current vs. input voltage v in , input voltage (v) 0.10 1.0 10 0 5 10 15 20 25 30 35 40 45 50 figure 5. input voltage vs. output current i c , collector current (ma) v in , input voltage (v) 150 c 25 c ? 55 c i c /i b = 10
nsbc114epdp6t5g series http://onsemi.com 6 typical electrical characteristics ? nsbc114epdp6 pnp transistor 0.01 0.10 1.0 0 5 10 15 20 25 30 35 40 45 50 figure 6. v ce(sat) vs. i c i c , collector current (ma) v ce(sat) , collector ? to ? emitter saturation voltage (v) t a =25 c t a = 150 c t a = ? 55 c i c /i b = 10 1.0 10 100 1000 0.1 1 10 100 v ce = 10 v 150 c 25 c ? 55 c figure 7. dc current gain i c , collector current (ma) h fe , dc current gain 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 5 10 15 20 25 30 35 40 45 50 figure 8. output capacitance reverse bias voltage (v) c obo , output capacitance (pf) 0.01 0.1 1.0 10 100 012345 150 c 25 c ? 55 c i c , collector current (ma) figure 9. output current vs. input voltage v in , input voltage (v) 0.1 1.0 10 0 5 10 15 20 25 30 35 40 45 50 figure 10. input voltage vs. output current i c , collector current (ma) v in , input voltage (v) 25 c ? 55 c 150 c
nsbc114epdp6t5g series http://onsemi.com 7 package dimensions sot ? 963 case 527ad ? 01 issue c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim min nom max millimeters a 0.34 0.37 0.40 b 0.10 0.15 0.20 c 0.07 0.12 0.17 d 0.95 1.00 1.05 e 0.75 0.80 0.85 e 0.35 bsc l 0.05 0.10 0.15 0.95 1.00 1.05 h e e b e d c a l c 0.08 h e 6x a 12 3 4 5 6 0.004 0.006 0.008 0.003 0.005 0.007 0.037 0.039 0.041 0.03 0.032 0.034 0.014 bsc 0.002 0.004 0.006 0.037 0.039 0.041 min nom max inches notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 0.35 0.014 0.20 0.08 mm inches scale 20:1 0.90 0.0354 0.35 0.014 0.20 0.08 a b b c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. nsbc114epdp6/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
