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1997 data sheet mos integrated circuit m pd16818 monolithic dual h bridge driver circuit description the m pd16818 is a monolithic dual h bridge driver ic which uses n-channel power mos fets in its output stage. by employing the power mos fets for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. in addition, the drive current can be adjusted by an external resistor in power-saving mode. the m pd16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head actuator of an fdd. features ? compatible with 3v-/5v- supply voltage ? pin compatible with m pd16803 ? low on resistance (sum of on resistors of top and bottom mos fets) r on1 = 1.2 w (v m = 3.0 v) r on2 = 1.0 w (v m = 5.0 v) ? low current consumption: i dd = 0.4 ma typ. (v dd = 2.7 v to 3.6 v) ? stop mode function that turns off all output mos fets ? drive current can be set in power-saving mode (set by external resistor) ? compact surface mount package ordering information part number package m pd16818gs 20-pin plastic sop (300 mil) m pd16818gr-8jg 20-pin plastic ssop (225 mil) absolute maximum ratings (t a = 25 c) parameter symbol condition rating unit supply voltage motor block v m C0.5 to +7.0 v control block v dd C0.5 to +7.0 power m pd16818gs p d1 1.0 note 1 w consumption p d2 1.25 note 2 m pd16818gr-8jg p d2s 0.79 note 2 instantaneous h bridge drive current i d (pulse) pw 5 ms, duty 40 % 1.0 note 2 a input voltage v in C0.5 to v dd + 0.5 v operating temperature range t a 0 to 60 c operation junction temperature t j (max) 150 c storage temperature range t stg C55 to +150 c notes 1. ic only 2. when mounted on a glass epoxy printed circuit board (100 mm 100 mm 1 mm) the information in this document is subject to change without notice. document no. s11365ej2v0ds00 (2nd edition) date published december 1997 n printed in japan
m pd16818 2 recommended operaing conditions parameter symbol min. typ. max. unit supply voltage motor block v m 2.7 6.0 v control block v dd 2.7 6.0 rx pin connection resistance r x 2k w h bridge drive current m pd16818gs i dr 430 ma (v dd = v m = 3 v) note m pd16818gr-8jg i drs 340 charge pump capacitor capacitance c 1 -c 3 520nf operating temperature t a 060 c note when mounted on a glass epoxy printed circuit board (100 mm 100 mm 1 mm) electrical specifications (within recommended operating conditions unless otherwise specified) v dd = v m = 4.0 v to 6.0 v parameter symbol conditions min. typ. max. unit off v m pin current i m inc pin low 1.0 m a v m = v dd = 6 v v dd pin current i dd note 1 1.0 2.0 ma high-level input current i ih1 t a = 25 c, v in = v dd 1.0 m a (in 1 , in 2 , inc) 0 t a 60 c, v in = v dd 2.0 low-level input current i il1 t a = 25 c, v in = 0 C0.15 ma (in 1 , in 2 , inc) 0 t a 60 c, v in = 0 C0.2 ps pin high-level input current i ih2 t a = 25 c, v in = v dd 0.15 ma 0 t a 60 c, v in = v dd 0.2 ps pin low-level input voltage i il2 t a = 25 c, v in = 0 C1.0 m a 0 t a 60 c, v in = 0 C2.0 input pull-up resistance r inu t a = 25 c 355065k w (in 1 , in 2 , inc) 0 t a 60 c2575 ps pin input pull-down resistance r ind t a = 25 c 355065k w 0 t a 60 c2575 control pin high-level input voltage v ih 3.0 v dd + 0.3 v control pin low-level input voltage v il C0.3 0.8 v h bridge on resistance note 2 r on2 v dd = v m = 5 v 1.0 2.0 w r on relative accuracy d r on excitation direction <1>, <3> 15 % excitation direction <2>, <4> note 3 5 charge pump circuit turn on time t ong v dd = v m = 5 v 0.3 2.0 ms h bridge turn on time t onh c 1 = c 2 = c 3 = 10nf 2.0 m s h bridge turn off time t offh r m = 20 w 5.0 m s notes 1. when in 1 = in 2 = inc = h, ps = l 2. sum of on resistances of top and bottom mos fets 3. for the excitation direction, refer to function table .
m pd16818 3 electrical specifications (within recommended operating conditions unless otherwise specified) v dd = v m = 2.7 v to 3.6 v parameter symbol conditions min. typ. max. unit off v m pin current i m inc pin low 1.0 m a v m = v dd = 3.6 v v dd pin current i dd note 1 0.4 1.0 ma high-level input current i ih1 t a = 25 c, v in = v dd 1.0 m a (in 1 , in 2 , inc) 0 t a 60 c, v in = v dd 2.0 low-level input current i il1 t a = 25 c, v in = 0 C0.09 ma (in 1 , in 2 , inc) 0 t a 60 c, v in = 0 C0.12 ps pin high-level input current i ih2 t a = 25 c, v in = v dd 0.09 ma 0 t a 60 c, v in = v dd 0.12 ps pin low-level input voltage i il2 t a = 25 c, v in = 0 C1.0 m a 0 t a 60 c, v in = 0 C2.0 input pull-up resistance r inu t a = 25 c 355065k w (in 1 , in 2 , inc) 0 t a 60 c2575 ps pin input pull-down resistance r ind t a = 25 c 355065k w 0 t a 60 c2575 control pin high-level input voltage v ih 2.0 v dd + 0.3 v control pin low-level input voltage v il C0.3 0.8 v h bridge on resistance note 2 r on1 v dd = v m = 3 v 1.2 2.4 w r on relative accuracy d r on excitation direction <1>, <3> 15 % excitation direction <2>, <4> note 3 5 vx voltage in power-saving v x v dd = v m = 3 v 1.0 1.2 1.4 v mode note 4 r x = 270 k w vx relative accuracy in power- d v x excitation direction <1>, <3> 5% saving mode excitation direction <2>, <4> 5 charge pump circuit turn on time t ong v dd = v m = 3 v 0.3 2.0 ms h bridge turn on time t onh c 1 = c 2 = c 3 = 10nf 2.0 m s h bridge turn off time t offh r m = 20 w 5.0 m s notes 1. when in 1 = in 2 = inc = h, ps = l 2. sum of on resistances of top and bottom mos fets 3. for the excitation direction, refer to function table . 4. vx is a voltage at point a (forward) or b (reverse) of the h bridge in function table.
m pd16818 4 pin configuration (top view) 20-pin plastic sop (300 mil) 20-pin plastic ssop (225 mil) 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 c1h c2l v m1 1a pgnd 2a v dd in 1 in 2 inc c1l c2h v g 1b pgnd 2b v m2 r x ps dgnd function table excitation direction in c in 1 in 2 h 1 h 2 <1> h h h f f <2> h l h r f <3> h l l f r <4> h h l r r Cl stop f: forward r: reverse ab v m on off off on forward ab v m off on on off reverse ab v m off off off off stop h 1 f h 1 r h 2 rh 2 f < 4 >< 1 > < 3 >< 2 >
m pd16818 5 block diagram osc circuit charge pump level control circuit ? bridge 1 ? bridge 2 switch circuit control circuit level shift band gap reference v dd c1l c1h 0.01 f c2l c2h v g r x ps in 1 in 2 inc 50 k w 50 k w 50 k w 50 k w dgnd v m v m1 1a 1b pgnd v m2 2a 2b pgnd m 0.01 f m 0.01 f m note note the power-saving mode is set when the ps pin goes high. in this mode, the voltage of the charge pump circuit is lowered and the on resistance of the h bridge driver transistor increases, limiting the current. remark is connected in diffusion layer.
m pd16818 6 characteristic curves 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.3 0.2 0.1 0 2 1.5 1 0.5 0 0 20406080100 200 20406080 200 20406080 p d vs. t a characteristics ( pd16818gs) m i dd vs. t a characteristics ambient temperature t a (?) ambient temperature t a (?) average power consumption p d (w) supply current i dd (ma) i dd vs. t a characteristics ambient temperature t a (?) supply current i dd (ma) ic only when mounted on a printed circuit board 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20406080100 p d vs. t a characteristics ( pd16818gr-8jg) m ambient temperature t a (?) average power consumption p d (w) when mounted on a printed circuit board v dd = 3.6 v v dd = 6 v
m pd16818 7 ?.1 ?.08 ?.06 ?.04 ?.02 0 ?.1 ?.08 ?.06 ?.04 ?.02 0 ?.2 ?.15 ?.1 ?.05 0 ?.2 ?.15 ?.1 ?.05 0 2.8 3 3.2 3.4 3.6 4 5 6 i ihl1 vs. v dd characteristics supply voltage v dd (v) input current i ih1 , i il1 (ma) i ihl1 vs. v dd characteristics supply voltage v dd (v) input current i ih1 , i il1 (ma) in 1 , in 2 , and inc pins in 1 , in 2 , and inc pins v in = v dd = 3 v in 1 , in 2 , and inc pins v in = v dd = 5 v in 1 , in 2 , and inc pins i il1 i il1 i il1 i ih1 i ih1 i il1 i ih1 i ih1 i ihl1 vs. t a characteristics ambient temperature t a (?) input current i ih1 , i il1 (ma) i ihl1 vs. t a characteristics ambient temperature t a (?) input current i ih1 , i il1 (ma) 200 20406080 200 20406080
m pd16818 8 0.1 0.08 0.06 0.04 0.02 0 0.1 0.08 0.06 0.04 0.02 0 0.2 0.15 0.1 0.05 0 0.2 0.15 0.1 0.05 0 2.8 3 3.2 3.4 3.6 4 5 6 i ihl2 vs. v dd characteristics supply voltage v dd (v) input current i ih2 , i il2 (ma) i ihl2 vs. v dd characteristics supply voltage v dd (v) input current i ih2 , i il2 (ma) i il2 i il2 i ih2 i ih2 i il2 i ih2 i il2 i ih2 i ihl2 vs. t a characteristics ambient temperature t a (?) input current i ih2 , i il2 (ma) i ihl2 vs. t a characteristics ambient temperature t a (?) input current i ih2 , i il2 (ma) 200 20406080 200 20406080 ps pin v in = 0 ps pin v in = 0 ps pin v in = 0 v dd = 3 v ps pin v in = 0 v dd = 5 v
m pd16818 9 v ih v il v ih v il 2 1.5 1 0.5 0 3 2.5 2 1.5 1 2.8 3 3.2 3.4 3.6 4 5 6 v ihl vs. v dd characteristics supply voltage v dd (v) input voltage v ihl (v) v ihl vs. v dd characteristics supply voltage v dd (v) input voltage v ih , v il (v) 2 1.5 1 0.5 0 v ihl vs. t a characteristics ambient temperature t a (?) input voltage v ihl (v) v ihl vs. t a characteristics ambient temperature t a (?) input voltage v ih , v il (v) 3 2.5 2 1.5 1 200 20406080 200 20406080 v dd = 3 v v dd = 5 v
m pd16818 10 r on vs. t a characteristics ambient temperature t a (?) h bridge on resistance r on ( w ) 200 20406080 2 1.5 1 0.5 0 2 1.5 1 0.5 0 r on vs. t a characteristics ambient temperature t a (?) h bridge on resistance r on ( w ) 200 20406080 v dd = v m = 3 v r m = 20 w v dd = v m = 5 v r m = 12 w 1 0.8 0.6 0.4 0.2 0 t ong vs. t a characteristics ambient temperature t a (?) charge pump turn on time t ong (ms) 200 20406080 v dd = v m = 3 v r m = 12 w v dd = v m = 5 v r m = 20 w 1 0.8 0.6 0.4 0.2 0 t ong vs. t a characteristics ambient temperature t a (?) charge pump turn on time t ong (ms) 200 20406080
m pd16818 11 t onh , t offh vs. t a characteristics t onh t offh t onh t offh ambient temperature t a (?) h bridge switching time t onh , t offh ( s) m m 200 20406080 v dd = v m = 3 v r m = 12 v vx vs. rx characteristics power-saving setting resistance rx (k w ) vx voltage in power-saving mode vx (v) 0 100 200 300 400 500 v dd = v m = 5 v r m = 12 w v dd = v m = 3.3 v r m = 12 w v dd = v m = 5 v r m = 20 w 1 0.8 0.6 0.4 0.2 0 t onh , t offh vs. t a characteristics ambient temperature t a (?) h bridge switching time t onh , t offh ( s) 200 20406080 3 2 1 0 100 200 300 400 500 vx vs. rx characteristics power-saving setting resistance rx (k w ) vx voltage in power-saving mode vx (v) 2 1.5 1 0.5 0 4 3 2 1
m pd16818 12 package drawings 20 pin plastic sop (300 mil) item millimeters inches a b c e f g h j 12.7?.3 1.27 (t.p.) 1.8 max. 1.55?.05 7.7?.3 0.78 max. 0.12 1.1 m 0.1?.1 n 0.500?.012 0.031 max. 0.004?.004 0.071 max. 0.061?.002 0.303?.012 0.043 0.005 0.050 (t.p.) p20gm-50-300b, c-5 p3 3 +7 note each lead centerline is located within 0.12 mm (0.005 inch) of its true position (t.p.) at maximum material condition. d 0.42 0.017 +0.08 ?.07 k 0.22 0.009 +0.08 ?.07 l 0.6?.2 0.024 0.10 ? +7 ? 0.004 +0.008 ?.009 +0.003 ?.004 +0.003 ?.004 detail of lead end m 110 11 20 i 5.6?.2 0.220 +0.009 ?.008 a b h k m l p j i g c d e f n
m pd16818 13 item millimeters inches b c d e f g h i j 0.65 (t.p.) 1.45 max. 1.15?.1 6.4?.2 0.575 max. k 0.10 1.0?.2 4.4?.1 0.15 m 0.22 0.1?.1 0.023 max. 0.009 0.004?.004 0.057 max. 0.045 0.252?.008 0.173 0.039 0.006 0.004 0.026 (t.p.) p20gr-65-225c-2 p3? 3? +0.10 ?.05 detail of lead end +0.004 ?.003 +0.005 ?.004 +0.005 ?.004 +0.009 ?.008 +0.10 ?.05 +0.004 ?.002 l 0.5?.2 0.020 +0.008 ?.009 0.10 n 0.004 +7? ?? +7? ?? note each lead centerline is located within 0.10 mm (0.004 inch) of its true position (t.p.) at maximum material condition. 20 pin plastic shrink sop (225mil) a 6.7?.3 0.264 +0.012 ?.013 20 m 11 110 b h k l p i g d e f c m n a j
m pd16818 14 recommended soldering conditions solder this product under the following recommended conditions. for details of the recommended soldering conditions, refer to information document semiconductor device mounting technology manual (c10535e) . surface mount type m pd16818gs 20-pin plastic sop (300 mil) m pd16818gr-8jg 20-pin plastic ssop (225 mil) soldering method soldering conditions symbol of recommended soldering infrared reflow package peak temperature: 235 c, time: 30 seconds max.(210 c min.), ir35-00-3 number of times: 3 max., number of days: none note , flux: rosin-based flux with little chlorine component (chlorine: 0.2 wt% max.) vps package peak temperature: 215 c, time: 40 seconds max.(200 c min.), vp15-00-3 number of times: 3 max., number of days: none note , flux: rosin-based flux with little chlorine component (chlorine: 0.2 wt% max.) wave soldering package peak temperature: 260 c, time: 10 seconds max., preheating ws60-00-1 temperature: 120 c max., number of times: 1, flux: rosin-based flux with little chlorine component (chlorine: 0.2 wt% max.) note number of days in storage after the dry pack has been opened. the storage conditions are at 25 c, 65 % rh max. caution do not use two or more soldering methods in combination.
m pd16818 15 [memo]
m pd16818 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5 [memo]

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