vishay general semiconductor SMBJ3V3 new product document number 88940 08-sep-06 www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? unidirectional polarity only ? peak pulse power: 600 w (10/1000 s) ? excellent clamping capability ? very fast response time ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units specifically for protecting 3.3 v supplied sensitive equipment against transient overvoltages. mechanical data case: do-214aa (smbj) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end do-214aa (smbj) major ratings and characteristics v (br) 3.3 v p ppm 600 w i fsm 60 a t j max. 175 c note: (1) non-repetitive current pulse, per fig. 1 (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipation (1,2) p ppm 600 w peak pulse current with a 10/1000 s waveform (see fig. 1) i ppm 50 a peak pulse current with a 8/20 waveform (see fig. 1) i ppm 200 a non repetitive peak forward surge current 8.3 ms single half sine-wave (2) i fsm 60 a power dissipation on in finite heatsink, t l = 75 c p m(av) 5w operating junction and storage temperature range t j , t stg - 65 to + 175 c electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v (br) at i t maximum reverse leakage current i r at v wm maximum clamping voltage v c at i ppm maximum clamping vol tag e v c at i ppm typical temp. coefficient of v (br) typical junction capacitance c j at 0 v, min max 10/1000 s 8/20 s 1 mhz vmaav va va (%/c) pf SMBJ3V3 kc 4.1 1.0 200 3.3 7.3 50 10.3 200 - 5.3 5200 .com .com .com
www.vishay.com 2 document number 88940 08-sep-06 vishay general semiconductor SMBJ3V3 note: (1) thermal resistance from junction to lead - mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (2) thermal resistance from junction to ambient - mounted on the recommended p.c.b. pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to lead (1) r jl 20 c/w typical thermal resistance, junction to ambient (2) r ja 100 ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode SMBJ3V3-e3/52 0.096 52 750 7" diameter plastic tape & reel smbj3v-e3/5b 0.096 5b 3200 13" diameter plastic tape & reel figure 1. pulse waveform figure 2. peak pulse power rating curve 0 50 100 150 td 0 1.0 2.0 3.0 4.0 tr = 8 sec. tr = 10 sec. i ppm - peak p u lse c u rrent, % i rsm t - time (ms) td = 1000 s td = 20 s peak v al u e i ppm half v al u e - i ppm i pp 2 t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 1 0.1 0.01 0.1 1 10 p ppm - peak p u lse p o w er (k w ) td - p u lse w idth (ms) figure 3. relative variation of leakage current vs. junction temperature figure 4. clamping voltage vs. peak pulse current (tj initial = 25 c) 0.1 1 10 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i r (t j )/i r (t j = 25 c) 4 6 8 10 0.1 1 10 100 1000 ipp (a) clamping v oltage ( v ) 10/1000 s 8 /20 s .com .com .com .com
document number 88940 08-sep-06 www.vishay.com 3 SMBJ3V3 vishay general semiconductor package outline dimensions in inches (millimeters) figure 5. typical j unction capacitance figure 6. typical transient thermal impedance 2000 2500 3000 3500 4000 4500 5000 5500 0 0.5 1 1.5 2 2.5 3 3.5 re v erse v oltage ( v ) c - j u nction capacitance (pf) j 100 10 0.01 0.1 1 1 10 100 1000 t - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 7. typical peak forward voltage drop vs. peak forward current 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 v f - for w ard v oltage drop ( v ) i f - peak for w ard c u rrent (a) t j = 175 c t j = 25 c 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.00 8 (0.2) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band do-214aa (smb-j-bend) 0.0 8 5 max. (2.159 max.) 0.220 ref 0.0 8 6 mi n . (2.1 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout .com .com .com .com
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. .com .com .com
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