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data sheet bts6510 infineon technologies ag page 1of 15 2000-mar-29 smart highside high current power switch reversave ? ? ? ? ? reverse battery protection by self turn on of power mosfet features ? overload protection ? current limitation ? short circuit protection ? overtemperature protection ? overvoltage protection (including load dump) ? clamp of negative voltage at output ? fast deenergizing of inductive loads 1 ) ? low ohmic inverse current operation ? diagnostic feedback with load current sense ? open load detection via current sense ? loss of v bb protection 2 ) ? e lectro s tatic d ischarge ( esd ) protection application ? power switch with current sense diagnostic feedback for 12 v and 24 v dc grounded loads ? most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in smart sipmos chip on chip technology. fully protected by embedded protection functions. in charge pump level shifter rectifier limit for unclamped ind. loads gate protection current limit 3 overvoltage protection + v bb profet out 4 & tab 1,2,6,7 load gnd load output voltage detection r is is 5 i is i l v is i in logic gnd voltage sensor voltage source current sense logic esd temperature sensor r bb v in 1 ) with additional external diode. 2 ) additional external diode required for energized inductive loads (see page 8). product summary overvoltage protection v bb(az) 62 v output clamp v on ( cl ) 42 v operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 6.0 m ? load current (iso) i l(iso) 70 a short circuit current limitation i l(sc) 130 a current sense ratio i l : i is 14 000 to 220-7 1 7 sm d
data sheet bts6510 infineon technologies ag page 2 of 15 2000-mar-29 pin symbol function 1outo output to the load. the pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3 ) 2 out o output to the load. the pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) 3 in i input, activates the power switch in case of short to ground 4v bb + positive power supply voltage, the tab is electrically connected to this pin. in high current applications the tab should be used for the v bb connection instead of this pin 4 ) . 5iss diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see truth table on page 6) 6outo output to the load. the pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) 7outo output to the load. the pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 42 v supply voltage for short circuit protection, t j,start =-40 ...+150c: (e as limitation see diagram on page 9) v bb 34 v load current (short circuit current, see page 5) i l self-limited a load dump protection v loaddump = v a + v s , v a = 13.5 v r i 5 ) = 2 ? , r l = 0.54 ? , t d = 200 ms, in, is = open or grounded v load dump 6 ) 75 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 170 w inductive load switch-off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const., i l = 20 a, z l = 7.5 mh, 0 ? , (see diagrams on page 9 ) e as 1.5 j electrostatic discharge capability (esd) human body model acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993, c = 100 pf, r = 1.5 k ? v esd 4kv current through input pin (dc) current through current sense status pin (dc) see internal circuit diagrams on page 7 i in i is +15 , -250 +15 , -250 ma 3 ) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4 ) otherwise add about 0.3 m ? to the r on if the pin is used instead of the tab. 5 ) r i = internal resistance of the load dump test pulse generator. 6 ) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839.
data sheet bts6510 infineon technologies ag page 3 of 15 2000-mar-29 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case : r thjc 7 ) -- -- 0.75 k/w junction - ambient (free air): r thja -- 60 -- smd version, device on pcb 8 ) :33 electrical characteristics parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (tab to pins 1,2,6,7) i l = 20 a, t j = 25 c: v in = 0, i l = 20 a , t j = 150 c: r on -- 4.4 7.9 6.0 10.5 m ? i l = 90 a , t j = 150 c: -- 10.7 v bb = 6v 9 ) , i l = 20 a , t j = 150 c: r on(static) -- 10 17 nominal load current 10 ) (tab to pins 1,2,6,7) iso 10483-1/6.7: v on = 0.5 v, t c = 85 c 11 ) i l(iso) 55 70 -- a nominal load current 10) , device on pcb 8)) t a = 85 c, t j 150 c v on 0.5 v, i l(nom) 13.6 17 -- a maximum load current in resistive range (tab to pins 1,2,6,7) v on = 1.8 v, t c = 25 c: see diagram on page 12 v on = 1.8 v, t c = 150 c: i l(max) 250 150 -- -- -- -- a turn-on time 12 ) i in to 90% v out : turn-off time i in to 10% v out : r l = 1 ? , t j =-40...+150c t on t off 150 80 230 130 470 200 s slew rate on 12) (10 to 30% v out ) r l = 1 ? , t j = 25 c d v /dt on 0.1 0.25 0.6 v/ s slew rate off 12) (70 to 40% v out ) r l = 1 ? , t j = 25 c -d v /dt off 0.15 0.35 0.6 v/ s 7 ) thermal resistance r thch case to heatsink (about 0.5 ... 0.9 k/w with silicone paste) not included! 8 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. 9 ) decrease of v bb below 10 v causes slowly a dynamic increase of r on to a higher value of r on(static) . as long as v bin > v bin(u) max , r on increase is less than 10 % per second for t j < 85 c. 10 ) not tested, specified by design. 11 ) t j is about 105c under these conditions. 12 ) see timing diagram on page 13.
data sheet bts6510 infineon technologies ag page 4 of 15 2000-mar-29 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max inverse load current operation on-state resistance (pins 1,2,6,7 to pin 4) v bin = 12 v, i l = - 20 a t j = 25 c: see page 9 t j = 150 c: r on(inv) -- 4.4 7.9 6.0 10.5 m ? nominal inverse load current (pins 1,2,6,7 to tab) v on = -0.5 v, t c = 85 c 11 ) i l(inv) 55 70 -- a drain-source diode voltage (v out > v bb ) i l = - 20 a, i in = 0, t j = +150 c - v on -- 0.6 -- v operating parameters operating voltage ( v in = 0) 9, 13 ) v bb(on) 5.0 -- 34 v undervoltage shutdown 14 ) v bin(u) 1.5 3.0 4.5 v undervolta g e start of char g e pump see diagram page 14 v bin(ucp) 3.0 4.5 6.0 v overvoltage protection 15 ) t j =-40 c: i bb = 15 ma t j = 25...+150 c: v bin(z) 60 62 -- 66 -- -- v standby current t j =-40...+25 c: i in = 0 t j = 150 c: i bb(off) -- -- 15 25 25 50 a 13 ) if the device is turned on before a v bb -decrease, the operating voltage range is extended down to v bin(u) . for all voltages 0 ... 34 v the device is fully protected against overtemperature and short circuit. 14 ) v bin = v bb - v in see diagram on page 7. when v bin increases from less than v bin(u) up to v bin(ucp) = 5 v (typ.) the charge pump is not active and v out v bb - 3 v. 15 ) see also v on(cl) in circuit diagram on page 8.
data sheet bts6510 infineon technologies ag page 5 of 15 2000-mar-29 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max protection functions short circuit current limit (tab to pins 1,2,6,7) 16) v on = 12 v t c =-40 c: t c =25 c: t c =+150 c: i l(sc) i l(sc) i l(sc) -- 45 -- 110 130 115 -- 180 -- a output clamp 17 ) i l = 40 ma: ( inductive load switch off ) see diagram ind. and overvolt. output clamp page 7 - v out(cl) 14 17 20 v output clamp (inductive load switch off) at v out = v bb - v on(cl) (e.g. overvoltage) i l = 40 ma v on(cl) 39 42 47 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery reverse battery voltage 18 ) - v bb -- -- 32 v on-state resistance (pins 1,2,6,7 to pin 4) t j = 25 c: v bb = -12v, v in = 0, i l = - 20 a, r is = 1 k ? t j = 150 c: r on(rev) -- 5.4 8.9 7.0 12.3 m ? integrated resistor in v bb line r bb -- 120 -- ? diagnostic characteristics current sense ratio, i l = 90 a, t j =-40 c: static on-condition, t j =25 c: k ilis = i l : i is , t j =150 c: v on < 1.5 v 19 ) , i l = 20 a, t j =-40 c: v is < v out - 5v, t j =25 c: v bin > 4.0 v t j =150 c: see dia g ram on pa g e 11 i l = 10 a, t j =-40 c: t j =25 c: t j =150 c: i l = 4 a, t j =-40 c: t j =25 c: t j =150 c: k ilis 12 400 12 000 11 400 12 200 12 000 11 500 11 100 11 500 11 400 10 000 11 000 10 600 14 200 13 700 12 800 14 800 14 100 13 200 15 300 14 500 13 300 17 600 15 600 13 800 16 000 15 400 14 200 17 400 16 200 15 000 19 500 17 500 15 200 28 500 22 000 18 000 i is =0 by i in =0 (e.g. during deenergizing of inductive loads) : sense current saturation i is,lim 6.5 -- -- ma 16 ) short circuit is a failure mode. the device is not designed to operate continuously into a short circuit. the lifetime will be reduced under such conditions. 17 ) this output clamp can be "switched off" by using an additional diode at the is-pin (see page 7). if the diode is used, v out is clamped to v bb - v on(cl) at inductive load switch off. 18 ) the reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). note that under off-conditions ( i in = i is = 0) the power transistor is not activated. this results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! increasing reverse battery voltage capability is simply possible as described on page 8. 19 ) if v on is higher, the sense current is no longer proportional to the load current due to sense current saturation, see i is,lim .
data sheet bts6510 infineon technologies ag page 6 of 15 2000-mar-29 parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max current sense leakage current i in = 0: v in = 0, i l 0: i is(ll) i is(lh) -- -- -- 2 0.5 -- a current sense overvoltage protection t j =-40 c: i bb = 15 ma t j = 25...+150 c: v bis(z) 60 62 -- 66 -- -- v current sense settling time 20 ) t s(is) -- -- 500 s input input and operatin g current ( see dia g ram pa g e 12 ) in grounded (v in = 0) i in(on) -- 0.8 1.5 ma input current for turn-off 21 ) i in(off) -- -- 80 a truth table input current output current sense remark level level i is normal operation l h l h 0 nominal =i l / k ilis , up to i is =i is,lim very high load current hh i is, lim up to v on =v on(fold back) i is no longer proportional to i l current- limitation hh 0 v on > v on(fold back) short circuit to gnd l h l l 0 0 over- temperature l h l l 0 0 short circuit to v bb l h h h 0 data sheet bts6510 infineon technologies ag page 7 of 15 2000-mar-29 terms profet v in is out bb v in i is i in v bb i bb i l v out v on 3 5 4 1,2,6,7 r is v is v bin r in d s v bis two or more devices can easily be connected in parallel to increase load current capability. input circuit (esd protection) in zd in i v bb r bb v z,in v bin v in when the device is switched off (i in = 0) the voltage between in and gnd reaches almost v bb . use a mechanical switch, a bipolar or mos transistor with appropriate breakdown voltage as driver. v z,in = 66 v (typ). current sense status output is is r is i zd is v bb v bb r z,is v v z,is = 66 v (typ.), r is = 1 k ? nominal (or 1 k ? /n, if n devices are connected in parallel). i s = i l / k ilis can be driven only by the internal circuit as long as v out - v is > 5 v. if you want measure load currents up to i l(m) , r is should be less than v bb - 5 v i l(m) / k ilis . note: for large values of r is the voltage v is can reach almost v bb . see also overvoltage protection. if you don't use the current sense output in your application, you can leave it open. inductive and overvoltage output clamp + v bb out profet v z1 v on d s is v out v zg v on is clamped to v on(cl) = 42 v typ. at inductive load switch-off without d s , v out is clamped to v out(cl) = -19 v typ. via v zg . with d s , v out is clamped to v bb - v on(cl) via v z1 . using d s gives faster deenergizing of the inductive load, but higher peak power dissipation in the profet. in case of a floating ground with a potential higher than 19v referring to the out ? potential the device will switch on, if diode ds is not used.
data sheet bts6510 infineon technologies ag page 8 of 15 2000-mar-29 overvoltage protection of logic part + v bb v out in bb r signal gnd logic profet v z,is r is in r is v z,in r v v z,vis r bb = 120 ? typ . , v z,in = v z,is = 66 v typ., r is = 1 k ? nominal. note that when overvoltage exceeds 71 v typ. a voltage above 5v can occur between is and gnd, if r v , v z,vis are not used. reverse battery protection logic is in is r v r out l r power gnd signal gnd v bb - power transistor in r bb r d s d r v 1 k ?, r is = 1 k ? nominal. add r in for reverse battery protection in applications with v bb above 16 v 18) ; recommended value: 1 r in + 1 r is + 1 r v = 0.1a | v bb | - 12v if d s is not used (or 1 r in = 0.1a | v bb | - 12v if d s is used). to minimize power dissipation at reverse battery operation, the summarized current into the in and is pin should be about 120ma. the current can be provided by using a small signal diode d in parallel to the input switch, by using a mosfet input switch or by proper adjusting the current through r is and r v . v bb disconnect with energized inductive load provide a current path with load current capability by using a diode, a z-diode, or a varistor. ( v zl < 72 v or v zb < 30 v if r in =0). for higher clamp voltages currents at in and is have to be limited to 250 ma. version a: profet v in out is bb v bb v zl version b: profet v in out is bb v bb v zb note that there is no reverse battery protection when using a diode without additional z-diode v zl , v zb . version c: sometimes a neccessary voltage clamp is given by non inductive loads r l connected to the same switch and eliminates the need of clamping circuit: profet v in out is bb v bb r l
data sheet bts6510 infineon technologies ag page 9 of 15 2000-mar-29 inverse load current operation profet v in out is bb v bb v out - i l r is v is v in + - + - i is the device is specified for inverse load current operation ( v out > v bb > 0v ). the current sense feature is not available during this kind of operation ( i is = 0). with i in = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. if the device is switched on (v in = 0), this power dissipation is decreased to the much lower value r on(inv) * i 2 (specifications see page 4). note: temperature protection during inverse load current operation is not possible! inductive load switch-off energy dissipation profet v in out is bb e e e e as bb l r e load l r l { z l r is i in v bb i (t) l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150 c, v bb = 12 v, r l = 0 ? l [h] i l [a] externally adjustable current limit if the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). the device will be turned off, if the threshold voltage of t2 is reached by i s *r is . after a delay time defined by r v *c v t1 will be reset. the device is turned on again, the short circuit current is defined by i l(sc). profet is in is r v r power gnd signal gnd v bb out v c load r t1 t2 in signal v bb 1 10 100 1000 10000 10 100 1000
data sheet bts6510 infineon technologies ag page 10 of 15 2000-mar-29 options overview type bts 6510p 550p 650p 555 overtemperature protection with hysteresis xxx t j >150 c, latch function 24 ) t j >150 c, with auto-restart on cooling xx x short circuit to gnd protection with overtemperature shutdown x switches off when v on >6 v typ. (when first turned on after approx. 180 s) xx overvoltage shutdown --- output negative voltage transient limit to v bb - v on(cl) xxx to v out = -19 v typ x 25) x 25 ) x 25) 24 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 5). no latch between turn on and t d(sc) . 25 ) can be "switched off" by using a diode d s (see page 8) or leaving open the current sense output.
data sheet bts6510 infineon technologies ag page 11 of 15 2000-mar-29 characteristics current sense versus load current: i is = f ( i l ), t j = -40 ... +150 c i is [ma] i l [a] current sense ratio: k ilis = f ( i l ),t j = -40 c k ilis i l [a] current sense ratio: i is = f ( i l ), t j = 25 c k ilis i l [a] current sense ratio: k ilis = f ( i l ),t j = 150 c k ilis i l [a] 10000 12000 14000 16000 18000 20000 22000 0 20406080 max typ min 10000 12000 14000 16000 18000 20000 22000 0 20406080 max t y p min 10000 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 0 20406080 max typ min 10000 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 0 20406080 max t y p min
data sheet bts6510 infineon technologies ag page 12 of 15 2000-mar-29 typ. current limitation characteristic i l = f (v on , t j ) i l [a] v on [v] typ. on-state resistance r on = f (v bb , t j ) ; i l = 20 a; v in = 0 r on [mohm] 0 2 4 6 8 10 12 14 0 5 10 15 static dynamic t j = 150c 85c 25c -40c 40 v bb [v] typ. input current i in = f ( v bin ), v bin = v bb - v in i in [ma] v bin [v] 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20406080 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 t j = -40 c t j = 25 c t j = 150 c v on(fb)
data sheet bts6510 infineon technologies ag page 13 of 15 2000-mar-29 timing diagrams figure 1a: switching a resistive load, change of load current in on-condition: i in t v out i l i is t son(is) tt slc(is) load 1 load 2 soff(is) t t t on off slc(is) 90% dv/dton dv/dtoff 10% the sense signal is not valid during a settling time after turn-on/off and after change of load current. figure 2a: switching motors and lamps: i in t v out i il i is sense current saturation can occur at very high inrush currents (see i is,lim on page 5). figure 2b: switching an inductive load: i in t v out i l i is figure 3a: short circuit: shut down by overtemperature detection with auto restart on cooling in t i l(scr) i i l(scp) i is l v out >>0 v out =0
data sheet bts6510 infineon technologies ag page 14 of 15 2000-mar-29 figure 4a: overtemperature reset if t j < t jt i in t i is v out t j auto restart figure 6a: undervoltage restart of charge pump, overvoltage clamp 0 2 4 6 0 v out v bin(ucp) v in = 0 i in = 0 v on(cl) v bin(u) v bin(u) dynamic, short undervoltage not below v on(cl)
data sheet bts6510 infineon technologies ag page 15 of 15 2000-mar-29 package and ordering code all dimensions in mm smd to 220-7, ordering code bts 6510 b t&r: q67060-s6311 footprint: 9.4 0.47 0.8 8.42 4.6 16.15 10.8 published by infineon technologies ag i gr ., bereichs kommunikation st.-martin-strasse 76, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life- support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support device or system, or to affect the safety or effectiveness of that device or system. life s upport devices or systems are int ended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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