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| savantic semiconductor product specification silicon npn power transistors MJ4033/4034/4035 description with to-3 package respectively complement to type mj4030/4031/4032 darlington high dc current gain applications for use as output devices in complementary general purpose amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit MJ4033 60 mj4034 80 v cbo collector-base voltage mj4035 open emitter 100 v MJ4033 60 mj4034 80 v ceo collector-emitter voltage mj4035 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 16 a i cm collector current-peak 20 a i b base current 0.5 a p c collector power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors MJ4033/4034/4035 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit MJ4033 60 mj4034 80 v ceo(sus) collector-emitter sustaining voltage mj4035 i c =0.1a ;i b =0 100 v v ce (sat) -1 collector-emitter saturation voltage i c =10a; i b =40ma 2.5 v v ce (sat) -2 collector-emitter saturation voltage i c =16a; i b =80ma 4.0 v v be base-emitter on voltage i c =10a ; v ce =3v 3.0 v v ce =30v; i b =0 v ce =40v; i b =0 i ceo collector cut-off current v ce =50v; i b =0 3.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe dc current gain i c =10a ; v ce =3v 1000 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.17 /w savantic semiconductor product specification 3 silicon npn power transistors MJ4033/4034/4035 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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