cascadable silicon bipolar mmic amplifier technical data features ? broadband, minimum ripple cascadable 50 w gain block ? 7.2 0.5 db typical gain flatness from 0.1 to 3.0 ghz ? 3 db bandwidth: 0.1 to 5.5 ghz ? 10.5 dbm typical p 1db at 2.0 ghz ? surface mount plastic package ? tape-and-reel packaging option available [1] MSA-0986 86 plastic package description the MSA-0986 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost, surface mount plastic package. this mmic is designed for very wide bandwidth industrial and commercial applications that require flat gain and low vswr. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 12 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 note: 1. refer to packaging section tape- and-reel packaging for semiconduc- tor devices.
2 MSA-0986 absolute maximum ratings parameter absolute maximum [1] device current 65 ma power dissipation [2,3] 500 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to +150 c thermal resistance [2,4] : q jc = 140 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.1 mw/ c for t c > 80 c. 4. see measurements section thermal resistance for more information. part number ordering information part number no. of devices container MSA-0986-tr1 1000 7" reel MSA-0986-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices. g p power gain (|s 21 | 2 ) f = 2.0 ghz db 6.0 7.2 d g p gain flatness f = 0.1 to 3.0 ghz db 0.5 f 3 db 3 db bandwidth [2] ghz 5.5 input vswr f = 1.0 to 3.0 ghz 1.6:1 output vswr f = 1.0 to 3.0 ghz 1.8:1 nf 50 w noise figure f = 2.0 ghz db 6.2 p 1 db output power at 1 db gain compression f = 2.0 ghz dbm 10.5 ip 3 third order intercept point f = 2.0 ghz dbm 23.0 t d group delay f = 2.0 ghz psec 95 v d device voltage v 6.2 7.8 9.4 dv/dt device voltage temperature coefficient mv/ c C16.0 notes: 1. the recommended operating current range for this device is 25 to 45 ma. typical performance as a function of current is on the following page. 2. referenced from 0.1 ghz gain (g p ). electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0986 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.02 .36 C105 11.4 3.72 145 C14.1 .198 18 .38 C102 0.73 0.05 .24 C145 8.5 2.65 156 C13.7 .205 5 .25 C143 1.08 0.1 .22 C164 7.7 2.43 166 C13.5 .211 4 .22 C158 1.17 0.2 .21 C179 7.5 2.37 167 C13.5 .212 1 .22 C172 1.20 0.4 .21 165 7.4 2.34 162 C13.4 .214 C1 .22 179 1.20 0.6 .22 155 7.4 2.33 156 C13.5 .212 C2 .22 175 1.21 0.8 .22 145 7.3 2.33 149 C13.4 .213 C2 .23 171 1.21 1.0 .23 136 7.3 2.32 142 C13.4 .214 C4 .24 167 1.20 1.5 .24 118 7.2 2.30 125 C13.3 .217 C6 .26 157 1.19 2.0 .25 106 7.2 2.28 109 C13.0 .224 C10 .28 148 1.16 2.5 .26 100 7.2 2.29 94 C13.0 .224 C12 .33 139 1.15 3.0 .26 94 7.1 2.26 77 C13.0 .224 C15 .34 128 1.15 3.5 .26 95 7.0 2.23 60 C12.8 .229 C21 .36 116 1.14 4.0 .28 96 6.7 2.17 43 C13.1 .221 C25 .35 104 1.18 4.5 .31 100 6.5 2.10 26 C13.6 .210 C31 .32 94 1.23 5.0 .37 101 6.0 2.00 9 C14.2 .196 C35 .26 86 1.30 5.5 .44 97 5.4 1.86 C7 C14.9 .181 C38 .19 88 1.38 6.0 .51 94 4.6 1.69 C22 C15.8 .162 C37 .14 107 1.47 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 g p (db) 0.1 .05 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency. 0 2 4 6 8 10 12 figure 3. output power at 1 db gain compression, noise figure and power gain vs. case temperature, f = 2.0 ghz, i d = 35 ma. 4 5 6 7 6 8 7 10 11 12 0 ?5 +25 +55 +85 p 1 db (dbm) nf (db) gp (db) temperature ( c) g p p 1 db nf 2 046810 v d (v) figure 2. device current vs. voltage. 0 10 20 30 50 40 i d (ma) t c = +85 c t c = +25 c t c = ?5 c frequency (ghz) figure 4. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 5. noise figure vs. frequency. 5.5 5.0 6.0 6.5 7.0 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 4.0 1.0 5 7 9 11 15 13 p 1 db (dbm) i d = 45 ma i d = 35 ma i d = 25 ma i d = 35 ma i d = 25 ma i d = 25 ma i d = 35-45 ma i d = 45 ma typical performance, t a = 25 c (unless otherwise noted)
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9552e (11/99) 86 plastic package dimensions 4 0.51 0.13 (0.020 0.005) 2.34 0.38 (0.092 0.015) 2.67 0.38 (0.105 0.15) 1 3 2 2.16 0.13 (0.085 0.005) dimensions are in millimeters (inches) 1.52 0.25 (0.060 0.010) 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 0.30 min (0.012 min) c l 45 5 typ. 8 max 0 min ground rf input rf output and dc bias ground a09
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