a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units i cbo v cb = 15 v 1.0 a i ebo v eb = 2.0 v 1.0 a h fe v ce = 10 v i c = 20 ma 20 250 --- c cb v cb = 10 v f = 1.0 mhz 0.6 1.0 pf f t v ce = 10 v i c = 20 ma f = 1.0 ghz 4.5 ghz ? s 21 ? 2 v ce = 10 v i c = 20 ma f = 0.5 ghz f = 1.0 ghz f = 2.0 ghz 5.5 18.5 13 6.5 db nf min v ce = 10 v i c = 3.0 ma f = 0.5 ghz v ce = 10 v i c = 5.0 ma f = 2.0 ghz 1.5 2.7 4.5 db npn silicon rf transistor NE02103 description: the asi NE02103 is designed for oscillator and amplifier applications up to 2.0 ghz. features include : ? high insertion gain, 18.5 db at 500 mhz. ? high power gain, 1.5 db at 500 mhz. ? low noise figure, 12 db at 2 ghz. ? for jan level add sufix d maximum ratings i c 70 ma v cbo 25 v v ceo 12 v v ebo 3.0 v p diss 350 mw @ t a = 25 c t j -65 c to +200 c t stg -65 c to +200 c jc 70 c/w package style .100 4lpill 1 = base 2&4 = emitter 3 = collector
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