1/9 august 2001 STD4NC50 STD4NC50-1 n-channel 500v - 1.3 w - 3.7a dpak/ipak powermesh?ii mosfet n typical r ds (on) = 1.3 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n swith mode low power supplies (smps) n high current, high speed switching n dc-ac converters for welding equipment and uninterruptible power supplies and motor drives absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STD4NC50 STD4NC50-1 500v 500v <1.5 w <1.5 w 3.7a 3.7a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 3.7 a i d drain current (continuos) at t c = 100c 2.3 a i dm (*) drain current (pulsed) 14.8 a p tot total dissipation at t c = 25c 50 w derating factor 0.4 w/c dv/dt(1) peak diode recovery voltage slope 3 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 3.7a, di/dt 100a/s, v dd v (br)dss , t j t jmax. dpak (no suffix) ipak (suffix-1) 1 3 3 2 1 internal schematic diagram
STD4NC50/-1 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 2.5 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3.7 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 220 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.9 a 1.3 1.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 1.9a 3s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 700 pf c oss output capacitance 85 pf c rss reverse transfer capacitance 9pf
3/9 STD4NC50/-1 thermal impedence electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 1.9 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 11.5 ns t r rise time 9 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400v, i d = 3.7 a, v gs = 10v 18 6 8 25 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 400v, i d = 3.7 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 7 6 13 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 3.7 a i sdm (2) source-drain current (pulsed) 14.8 a v sd (1) forward on voltage i sd = 3.7a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.7a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 380 2.3 12 ns m c a safe operating area
STD4NC50/-1 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 STD4NC50/-1 normalized gate thereshold voltage vs temp. normalized on resistance vs temperature source-drain diode forward characteristics
STD4NC50/-1 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STD4NC50/-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD4NC50/-1 8/9 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
9/9 STD4NC50/-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
|
