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rf & protection devices data sheet revision 1.0, 2010-06-29 BFP740ESD robust high performance low no ise bipolar rf transistor
edition 2010-06-29 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP740ESD data sheet 3 revision 1.0, 2010-06-29 trademarks of infineon technologies ag bluemoon?, comneon?, c166 ?, crossave?, canpak?, cipos? , coolmos?, coolset?, corecontrol?, dave?, easypim?, econobridg e?, econodual?, eco nopack?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, isofac e?, i2rf?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, profet?, pro-sil?, primarion?, primepac k?, rasic?, reversave? , satric?, sensonor?, sieget?, sindrion?, smarti?, smartlewis?, tempfet? , thinq!?, tricore?, trenchstop?, x-go ld?, xmm?, x-pmu?, xposys?. other trademarks advance design system? (ads) of agilent tech nologies, amba?, arm?, mu lti-ice?, primecell?, realview?, thumb? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus? , firstgps? of trimble navigation ltd. emv? of emvco, llc (visa holdings inc.). ep cos? of epcos ag. flexgo? of microsoft corporation. flexray? is licensed by flexra y consortium. hyperterminal? of hilgraeve incorpor ated. iec? of commission electrotechnique internationale. irda? of infrared data association corporation. iso? of international organization for standardizati on. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. mi crotec?, nucleus? of mentor graphi cs corporation. mifare? of nxp. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius sattelite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-03-22 BFP740ESD, robust high performance low noise bipolar rf transistor revision history: 2010-06-29, revision 1.0 previous revision: page subjects (major cha nges since last revision)
BFP740ESD table of contents data sheet 4 revision 1.0, 2010-06-29 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 package information sot343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 table of contents
BFP740ESD list of figures data sheet 5 revision 1.0, 2010-06-29 figure 1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 2 BFP740ESD testing circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 3 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter . . . . . . . . . . . . . . . . . 18 figure 4 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 5 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v. . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 6 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 19 figure 7 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 20 figure 8 transition frequency f t = f ( i c ), f = 2 ghz, v ce = parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 9 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 , v ce , f = parameters. . . . . . . . . . . . . . . . . 21 figure 10 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 11 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 12 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . 23 figure 13 maximum power gain g max = f ( v ce ), i c = 25 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 23 figure 14 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 15 source impedance for minimum noise figure z opt = f ( f ) , v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . 24 figure 16 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 17 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 25 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 18 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 26 figure 19 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 26 figure 20 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 21 package foot print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 22 marking example (marking BFP740ESD: t7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 23 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 list of figures
BFP740ESD list of tables data sheet 6 revision 1.0, 2010-06-29 table 1 quick reference dc characteristics at t a = 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 2 quick reference ac characteristics at t a = 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3 maximum ratings at t a = 25c (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 6 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 7 ac characteristics, v ce = 3 v, f = 150 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 8 ac characteristics, v ce = 3 v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 9 ac characteristics, v ce = 3 v, f = 900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 10 ac characteristics, v ce = 3 v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 11 ac characteristics, v ce = 3 v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 12 ac characteristics, v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 13 ac characteristics, v ce = 3 v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 14 ac characteristics, v ce = 3 v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 15 ac characteristics, v ce = 3 v, f = 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 list of tables
1 2 3 4 product name package pin configuration marking BFP740ESD sot343 1 = b 2 = e 3 = c 4 = e t7s robust high performance low no ise rf bipolar transistor BFP740ESD data sheet 7 revision 1.0, 2010-06-29 1 features ? robust high performance low noise amplifier based on infineons reliable, high volume sige:c wafer technology ? 2 kv esd robustness (hbm) due to integrated protection circuits ? high maximum rf input power of 21 dbm ? 0.65 db minimum noise figure typical at 2.4 ghz, 0.9 db at 5.5 ghz, 6 ma ? 25.5 db maximum gain ( g ma , g ms ) typical at 2.4 ghz, 18.5 db at 5.5 ghz, 25 ma ? 24 dbm oip 3 typical at 5.5 ghz, 25 ma ? accurate spice gp model available to enable effective design in process (see chapter 6) ? easy to use, pb- and halogen free (rohs compliant) standard package with visible leads applications as low noise amplifier (lna) in ? mobile, portable and fixed connectivity applicatio ns: wlan 802.11a/b/g/n, wimax 2.5/3.5/5 ghz, uwb, bluetooth ? satellite communication systems: navigation systems (gps, glona ss), satellite radio (sdars, dab) and c-band lnb ? multimedia applications such as mobile/portable tv, catv, fm radio ? 3g/4g umts/lte mobile phone applications ? ism applications like rke, amr and zigbee, as well as for emerging wireless applications as discrete active mixer, amplif ier in vcos and buffer amplifier attention: esd (electrostatic discharge) sensitive device, observe handling precautions
BFP740ESD product brief data sheet 8 revision 1.0, 2010-06-29 2 product brief the BFP740ESD is a silicon germanium carbon (sige:c) npn heterojuncti on wideband bipol ar rf transistor (hbt) in a plastic dual emitter standard package with visi ble leads. the device is fitted with internal protection circuits, which enhance robustness against esd and high rf input power strongly. the device combines robustness with very high rf gain and lowest noise figu re at low operation current for use in a wide range of wireless applications. the BFP740ESD is especially well-suited for portable ba ttery-powered applications in which reduced power consumption is a key requiremen t. device design supports collector voltages up to 4.2 v. table 1 quick reference dc characteristics at t a = 25c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 4.2 4.7 ? v i c =1ma, i b =0 open base collector base leakage current i cbo ??400na v cb =2v, i e =0 open emitter dc current gain h fe 160 250 400 v ce =3v, i c =25ma collector current i c ??45ma total power dissipation p tot ??160mw t s 98 c
BFP740ESD product brief data sheet 9 revision 1.0, 2010-06-29 table 2 quick reference ac characteristics at t a = 25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?45?ghz v ce =3v, i c =25ma f =2ghz v ce = 3 v, f = 2.4 ghz maximum power gain db low noise operation point g ms ?22? i c =6ma high linearity operation point g ms ?25.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?19.5? i c =6ma high linearity operation point s 21 ?22? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.65? i c =6ma associated gain g ass ?20? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10.5? i c =25ma 3rd order intercept point oip 3 ?25? i c =25ma v ce =3v, f = 5.5 ghz maximum power gain db low noise operation point g ms ?19? i c =6ma high linearity operation point g ma ?18.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?13? i c =6ma high linearity operation point s 21 ?14.5? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.9? i c =6ma associated gain g ass ?13.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10? i c =25ma 3rd order intercept point oip 3 ?24? i c =25ma
BFP740ESD maximum ratings data sheet 10 revision 1.0, 2010-06-29 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3 maximum ratings at t a = 25c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo open base ?4.2v t a = 25c ?3.7v t a = -55 c collector emitter voltage 1) 1) low v cbo due to integrated protection circuits v cbo open emitter ?4.9v t a = 25c ?4.4v t a = -55 c collector emitter voltage 2) 2) v ces is identical to v ceo due to integrated protection circuits. v ces emitter / base shortened ?4.2v t a = 25c ?3.7v t a = -55 c base current 3) 3) sustainable reverse bias current is high due to integrated protection circuits. i b -10 5 ma ? collector current i c ?45ma? rf input power p rfin ?21dbm? esd stress pulse 4) 4) esd robustness is high due to integrated protection circuits. v esd -2 2 kv hbm, all pins, acc. to jesd22-a114 total power dissipation 5) 5) t s is the soldering point temperature . t s measured on the emitter lead at the soldering point of the pcb. p tot ?160mw t s 98 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
BFP740ESD thermal characteristics data sheet 11 revision 1.0, 2010-06-29 4 thermal characteristics figure 1 total power dissipation p tot = f ( t s ) table 4 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance an 077 r thjs ?325?k/w? 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 t s [c] ptot [mw]
BFP740ESD electrical characteristics data sheet 12 revision 1.0, 2010-06-29 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5 dc characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 4.2 4.7 ? v i c =1ma, i b =0 open base collector emitter leakage current i ces ??400na v ce =2v, v be =0 emitter/base shortened collector base leakage current i cbo ??400na v cb =2v, i e =0 open emitter emitter base leakage current i ebo ??10 a v eb =0.5v, i c =0 open collector dc current gain h fe 160 250 400 v ce =3v, i c = 25 ma pulse measured table 6 general ac characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?45?ghz v ce =3v, i c =25ma f =2ghz collector base capacitance c cb ?0.08?pf v cb =3v, v be =0 f =1mhz emitter grounded collector emitte r capacitance c ce ?0.45?pf v ce =3v, v be =0 f =1mhz base grounded emitter base capacitance c eb ?0.55?pf v eb =0.4v, v cb =0 f =1mhz collector grounded
BFP740ESD electrical characteristics data sheet 13 revision 1.0, 2010-06-29 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 system, t a = 25 c figure 2 BFP740ESD testing circuit table 7 ac characteristics, v ce = 3 v, f =150mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?34? i c =6ma high linearity operation point g ms ?38.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?25? i c =6ma high linearity operation point s 21 ?34? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.55? i c =6ma associated gain g ass ?30.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?9? i c =25ma 3rd order intercept point oip 3 ?23.5? i c =25ma in out bias -t bias-t b (pin 1) e c e vc top view vb
BFP740ESD electrical characteristics data sheet 14 revision 1.0, 2010-06-29 table 8 ac characteristics, v ce = 3 v, f =450mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?29? i c =6ma high linearity operation point g ms ?33.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?24.5? i c =6ma high linearity operation point s 21 ?32? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.55? i c =6ma associated gain g ass ?28.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?9.5? i c =25ma 3rd order intercept point oip 3 ?23.5? i c =25ma table 9 ac characteristics, v ce = 3 v, f =900mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?26? i c =6ma high linearity operation point g ms ?30.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?23.5? i c =6ma high linearity operation point s 21 ?29? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.55? i c =6ma associated gain g ass ?25.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?9.5? i c =25ma 3rd order intercept point oip 3 ?24? i c =25ma
BFP740ESD electrical characteristics data sheet 15 revision 1.0, 2010-06-29 table 10 ac characteristics, v ce = 3 v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?23.5? i c =6ma high linearity operation point g ms ?28? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?22? i c =6ma high linearity operation point s 21 ?25.5? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.6? i c =6ma associated gain g ass ?23? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10? i c =25ma 3rd order intercept point oip 3 ?24.5? i c =25ma table 11 ac characteristics, v ce = 3 v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?22.5? i c =6ma high linearity operation point g ms ?26.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?21? i c =6ma high linearity operation point s 21 ?24? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.6? i c =6ma associated gain g ass ?21? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10? i c =25ma 3rd order intercept point oip 3 ?25? i c =25ma
BFP740ESD electrical characteristics data sheet 16 revision 1.0, 2010-06-29 table 12 ac characteristics, v ce = 3 v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?22? i c =6ma high linearity operation point g ms ?25.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?19.5? i c =6ma high linearity operation point s 21 ?22? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.65? i c =6ma associated gain g ass ?20? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10.5? i c =25ma 3rd order intercept point oip 3 ?25? i c =25ma table 13 ac characteristics, v ce = 3 v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?20.5? i c =6ma high linearity operation point g ms ?23? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?17? i c =6ma high linearity operation point s 21 ?19? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.7? i c =6ma associated gain g ass ?16.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10.5? i c =25ma 3rd order intercept point oip 3 ?24.5? i c =25ma
BFP740ESD electrical characteristics data sheet 17 revision 1.0, 2010-06-29 note: 1. g ms = is 21 / s 12 i for k < 1; g ma = is 21 / s 12 i(k-(k 2 -1) 1/2 ) for k > 1 2. in order to get the nf min values stated in this chapter the test fixt ure losses have been subtracted from all measured results. 3. oip3 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.2 mhz to 12 ghz. table 14 ac characteristics, v ce = 3 v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?19? i c =6ma high linearity operation point g ma ?18.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?13? i c =6ma high linearity operation point s 21 ?14.5? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.9? i c =6ma associated gain g ass ?13.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?10? i c =25ma 3rd order intercept point oip 3 ?24? i c =25ma table 15 ac characteristics, v ce = 3 v, f =10ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db low noise operation point g ms ?14.5? i c =6ma high linearity operation point g ms ?14.5? i c =25ma transducer gain db z s = z l =50 low noise operation point s 21 ?5.5? i c =6ma high linearity operation point s 21 ?7.5? i c =25ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.8? i c =6ma associated gain g ass ?8.5? i c =6ma linearity dbm z s = z l =50 1 db gain compression point op 1db ?7.5? i c =25ma 3rd order intercept point oip 3 ?21? i c =25ma
BFP740ESD electrical characteristics data sheet 18 revision 1.0, 2010-06-29 5.4 characteristic dc diagrams figure 3 collector current vs. collector emitter voltage i c = f ( v ce ), i b = parameter figure 4 dc current gain h fe = f ( i c ), v ce = 3 v 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce [v] i c [ma] i b = 5a i b = 25a i b = 45a i b = 65a i b = 85a i b = 105a i b = 125a i b = 145a i b = 165a i b = 185a i b = 205a i b = 225a 100 1000 0.1 1 10 100 i c [ma] h fe 100 1000 0.1 1 10 100 i c [ma] h fe
BFP740ESD electrical characteristics data sheet 19 revision 1.0, 2010-06-29 figure 5 collector current vs . base emitter voltage i c = f ( v be ), v ce = 2 v figure 6 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v 0.0001 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0.8 0.9 v be [v] i c [ma] 0.00001 0.0001 0.001 0.01 0.1 1 0.5 0.6 0.7 0.8 0.9 v be [v] i b [ma]
BFP740ESD electrical characteristics data sheet 20 revision 1.0, 2010-06-29 figure 7 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 0.3 0.4 0.5 0.6 0.7 0.8 v eb [v] i b [a]
BFP740ESD electrical characteristics data sheet 21 revision 1.0, 2010-06-29 5.5 characteristic ac diagrams figure 8 transition frequency f t = f ( i c ), f = 2 ghz, v ce = parameter figure 9 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 , v ce , f = parameters 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 i c [ma] f t [ghz] 3 to 4v 2.5v 2v 1v 0 5 10 15 20 25 30 35 ?5 0 5 10 15 20 25 30 i c [ma] oip 3 [dbm] 2v, 2.4ghz 3v, 2.4ghz 2v, 5.5ghz 3v, 5.5ghz
BFP740ESD electrical characteristics data sheet 22 revision 1.0, 2010-06-29 figure 10 collector base capacitance c cb = f ( v cb ), f = 1 mhz figure 11 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 25 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 f [ghz] g [db] g ms g ma |s 21 | 2 g ms
BFP740ESD electrical characteristics data sheet 23 revision 1.0, 2010-06-29 figure 12 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 13 maximum power gain g max = f ( v ce ), i c = 25 ma, f = parameter in ghz 0 5 10 15 20 25 30 35 40 45 9 12 15 18 21 24 27 30 33 36 39 42 i c [ma] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 0 1 2 3 4 5 9 12 15 18 21 24 27 30 33 36 39 42 v ce [v] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz
BFP740ESD electrical characteristics data sheet 24 revision 1.0, 2010-06-29 figure 14 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 25 ma figure 15 source impedance for minimum noise figure z opt = f ( f ) , v ce = 3 v, i c = 6 / 25 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 10 0.03 to 10 ghz 25 ma 6 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.45ghz 0.9ghz 1.9ghz 2.4ghz 5.5ghz 10ghz i c = 6.0ma i c = 25ma
BFP740ESD electrical characteristics data sheet 25 revision 1.0, 2010-06-29 figure 16 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 25 ma figure 17 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 25 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 10 0.03 to 10 ghz 25 ma 6 ma 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c = 6.0ma i c = 25ma nfmin [db] f [ghz]
BFP740ESD electrical characteristics data sheet 26 revision 1.0, 2010-06-29 figure 18 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz figure 19 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a =25c 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 f = 1.8ghz f = 5.5ghz f = 2.4ghz f = 0.9ghz f = 0.45ghz f = 10ghz nfmin [db] i c [ma] 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i c [ma] nf50 [db] f = 1.8ghz f = 5.5ghz f = 0.45ghz f = 10ghz f = 2.4ghz f = 0.9ghz
BFP740ESD simulation data data sheet 27 revision 1.0, 2010-06-29 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the BFP740ESD spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very qu ickly and conveniently. the model alre ady contains the package parasitics and is ready to use for dc- and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP740ESD spice gp model reflects the typical dc- and rf-performan ce within the limitations wh ich are given by the spice gp model itself. besides the dc charac teristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
BFP740ESD package information sot343 data sheet 28 revision 1.0, 2010-06-29 7 package information sot343 figure 20 package outline figure 21 package foot print figure 22 marking example (marking BFP740ESD: t7s) figure 23 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 marking pin 1 manufacturer xys marking pin 1 manufacturer xys sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
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