absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(av) average on-state current half sine wave : t c = 74 c 0.5 a i t(rms) r.m.s on-state current all conduction angle 0.6 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 6 a i 2 t i 2 t for fusing t = 8.3ms 0.415 a 2 s p gm forward peak gate power dissipation t a =25c, pulse width 1.0 ? 2w p g(av) forward average gate power dissipation t a =25c, t = 8.3ms 0.1 w i fgm forward peak gate current 1 a v rgm reverse peak gate voltage 5.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c [p p cr 606j features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 0. 6 a ) low on-state voltage (1.2v(typ.)@ i tm ) general description sensitive triggering scr is suit able for the application where gate current limited such as small motor control, gate driver for large scr, sensing and detecting circuits. 2. gate 1. cathode symbol 1/5 sensitive gate silicon controlled rectifiers to-92 1 2 3 3. anode wed: http://www.kcd.net.cn email:kcd@kcd.net.cn
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm or v rrm ; r gk = 1000 t c = 25 c t c = 125 c 10 200 ? v tm peak on-state voltage (1) ( i tm = 1 a, peak ) 1.2 1.7 v i gt gate trigger current (2) v ak = 6 v, r l =100 t c = 25 c t c = - 40 c 200 500 ? v gt gate trigger voltage (2) v d = 7 v, r l =100 t c = 25 c t c = - 40 c 0.8 1.2 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 t c = 125 c 0.2 v dv/dt critical rate of rise off-state voltage v d = 0.67 v drm , exponential waveform, r gk = 1000 t j = 125 c 500 800 v/ ? di/dt critical rate of rise on-state current i tm = 2a ; i g = 10ma 50 a/ ? i h holding current v ak = 12 v, gate open initiating curent = 50ma t c = 25 c t c = - 40 c 2 5.0 10 ma r th(j-c) thermal impedance junction to case 60 c/w r th(j-a) thermal impedance junction to ambient 150 c/w p cr 606j 2/5 notes : 1. pulse width 1.0 ms , duty cycle 1% 2. does not include r gk in measurement. wed: http://www.kcd.net.cn email:kcd@kcd.net.cn
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 r (j-c) transient thermal impedance [ o c/w] time (sec) 0.5 1.0 1.5 2.0 2.5 10 -1 10 0 10 1 125 o c 25 o c on-state current [a] on-state voltage [v] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 120 140 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (1a) v gd (0.2v) p g(av) (0.1w) p gm (2w) v gm (5v) 25 o c gate voltage [v] gate current [ma] p cr 606j fig 2. maximum case temperature b : conduction angl e 360 b 2 jj fi g 3 . t yp i ca l f orwar d v o lt age fi g 4 . th erma l r esponse fig 5. typical gate trigger voltage vs. junction temperature fi g 6 . t yp i ca l g ate t r i gg er c urrent vs. junction temperature fig 1. gate characteristics -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/5 wed: http://www.kcd.net.cn email:kcd@kcd.net.cn
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] p cr 606j fi g 7 . t yp i ca l h o ldi ng c ur ren t fig 8. power dissipation 4/5 wed: http://www.kcd.net.cn email:kcd@kcd.net.cn
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2.54 0.100 i2.54 0.100 j 0.33 0.48 0.013 0.019 to-92 package dimension 1. cathode 2. gate 3. anode a b c g e f d 5/5 p cr 606j h j 1 2 3 i wed: http://www.kcd.net.cn email:kcd@kcd.net.cn
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