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BB304C build in biasing circuit mos fet ic uhf/vhf rf amplifier ade-208-606c (z) 4th. edition august 1998 features build in biasing circuit; to reduce using parts cost & pc board space. high gain; (pg = 29 db typ. at f = 200 mhz) low noise characteristics; (nf = 1.2 db typ. at f = 200 mhz) wide supply voltage range; applicable with 5v to 9v supply voltage. withstanding to esd; build in esd absorbing diode. withstand up to 200v at c=200pf, rs=0 conditions. provide mini mold packages; cmpak-4(sot-343mod) outline cmpak-4 1. source 2. gate1 3. gate2 4. drain 1 4 3 2 notes: 1 marking is ?w. 2. BB304C is individual type number of hitachi bbfet.
BB304C 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v ds 12 v gate1 to source voltage v g1s +10 ? v gate2 to source voltage v g2s 10 v drain current i d 25 ma channel power dissipation pch 100 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 12v i d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +10 v i g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 10v i g2 = +10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +9v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss 100 na v g2s = +9v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.4 1.0 v v d s = 5v, v g 2 s = 4v i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.5 1.0 v v d s = 5v, v g 1 s = 5v i d = 100 m a
BB304C 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions input capacitance c iss 2.3 2.8 3.6 pf v ds = 5v, v g1 = 5v, v g2s =4v output capacitance c oss 0.9 1.3 2.0 pf r g = 180k w, f = 1mhz reverse transfer capacitance c rss 0.003 0.02 0.05 pf drain current i d(op) 1 9 14 19 ma v d s = 5v, v g 1 = 5v, v g 2 s = 4v r g = 180k w i d(op) 2 13 ma v d s = 9v, v g 1 = 9v, v g 2 s =6v r g = 470k w forward transfer admittance |y fs |1 22 27 34 ms v d s = 5v, v g 1 = 5v, v g 2 s =4v r g = 180k w , f = 1khz |y fs |2 27 ms v d s = 9v, v g 1 = 9v, v g 2 s =6v r g = 470k w , f = 1khz power gain pg1 24 29 32 db v d s = 5v, v g 1 = 5v, v g 2 s =4v r g = 180k w , f = 200mhz pg2 29 db v d s = 9v, v g 1 = 9v, v g 2 s =6v r g = 470k w , f = 200mhz noise figure nf1 1.2 1.9 db v d s = 5v, v g 1 = 5v, v g 2 s =4v r g = 180k w , f = 200mhz nf2 1.2 db v d s = 9v, v g 1 = 9v, v g 2 s =6v r g = 470k w , f = 200mhz
BB304C 4 main characteristics power gain, noise figure test circuit gate 1 source drain gate 2 r g a i d v g2 v g1 v g2 input(50 w ) 1000p 36p 1000p l1 v = v d g1 r g bbfet rfc output(50 w ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k 470k v t v t unit resistance ( w ) capacitance (f) 1sv70 l1 : f 1mm enameled copper wire,inside dia 10mm, 2turns l2 : f 1mm enameled copper wire,inside dia 10mm, 2turns rfc : f 1mm enameled copper wire,inside dia 5mm, 2turns test circuit for operating items (i , |yfs|, ciss, coss, crss, nf, pg) d(op)
BB304C 5 200 150 100 50 0 50 100 150 200 0 1.2 2.4 3.8 4.8 6.0 25 20 15 10 5 0 246810 0 2 46810 25 20 15 10 5 drain current vs. gate1 voltage drain current vs. gate2 to source voltage channel power dissipation pch (mw) ambient temperature ta (?c) maximum channel power dissipation curve 25 20 15 10 5 drain current i (ma) d drain current i (ma) d drain to source voltage v (v) drain current i (ma) d typical output characteristics ds gate2 to source voltage v (v) g2s gate1 voltage v (v) g1 330 k w 390 k w 470 k w r = 1.5 m g w v = 9 v r = 390 k w ds g 1m w 470 k w v = v = 9 v ds g1 v = 1 v g2s 6 v 5 v 4 v 3 v 2 v 560 k w 680 k w 820 k w r = 1.5 m g w 1m w 820 k w 680 k w 560 k w 390 k w 330 k w 270 k w v = 6 v v = v g2s g1 ds 270 k w
BB304C 6 25 20 15 10 5 0 2 46810 25 20 15 10 5 0 2 46810 v = 9 v r = 470 k w ds g forward transfer admittance vs. gate1 voltage drain current vs. gate1 voltege drain current i (ma) d drain current i (ma) d gate1 voltage v (v) g1 fs forward transfer admittance |y | (ms) fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 drain current vs. gate1 voltege forward transfer admittance vs. gate1 voltage gate1 voltage v (v) g1 gate1 voltage v (v) g1 4 v 3 v 2 v 30 24 18 12 6 0 2 46810 30 24 18 12 6 0 2 46810 w v = 9 v r = 390 k f = 1 khz ds g v = 1 v g2s 2 v w v = 9 v r = 470 k f = 1 khz ds g 5 v 6 v 3 v 5 v 6 v 4 v v = 1 v g2s v = 9 v r = 560 k w ds g 4 v 3 v 2 v 5 v 6 v v = 1 v g2s v = 1 v g2s 2 v 3 v 5 v 6 v 4 v
BB304C 7 30 24 18 12 6 0 2 46810 40 35 30 25 20 15 10 0.1 0.2 0.5 1 2 5 10 40 35 30 25 20 15 10 0 510152025 30 v = 9 v v = 9 v v = 6 v r = variable f = 200 mhz ds g1 g2s g v = 9 v v = 9 v v = 6 v f = 200 mhz ds g1 g2s 0 4 3 2 1 0.1 0.2 0.5 1 2 5 10 v = 9 v v = 9 v v = 6 v f = 200 mhz ds g1 g2s power gain vs. gate resistance gate resistance r (m w ) noise figure vs. gate resistance noise figure nf (db) power gain vs. drain current drain current i (ma) d forward transfer admittance vs. gate1 voltage fs forward transfer admittance |y | (ms) gate1 voltage v (v) g1 g gate resistance r (m ) g w power gain pg (db) power gain pg (db) w v = 9 v r = 560 k f = 1 khz ds g v = 1 v g2s 2 v 6 v 5 v 4 v 3 v
BB304C 8 60 50 40 30 20 10 0 12345 0 510152025 30 4 3 2 1 0 1234 5 v = 9 v v = 9 v v = 6 v r = variable f = 200 mhz ds g1 g2s g v = 9 v v = 9 v v = 6 v r = 470 k f = 200 mhz ds g1 g2s g w 30 25 20 15 10 5 0 0.1 0.2 0.5 1 2 5 10 v = 9 v v = 9 v v = 6 v ds g1 g2s drain current vs. gate resistance gain reduction gr (db) gain reduction vs. gate2 to source voltage input capacitance ciss (pf) input capacitance vs. gate2 to source voltage noise figure nf (db) noise figure vs. drain current drain current i (ma) d drain current i (ma) d 67 6 6 5 4 3 2 1 v = 9 v v = 9 v r = 470 k f = 1 mhz ds g1 g w gate resistance r (m ) g w gate2 to source voltage v (v) g2s gate2 to source voltage v (v) g2s
BB304C 9 10 5 4 3 2 1.5 1 .8 e2 e3 e4 e5 e10 .6 .4 .2 0 e.2 e.4 e.6 e.8 e1 e1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 s11 parameter vs. frequency scale: 1 / div. 0? 30? 60? 90? 120? 150? 180? e150? e90? e60? e30? e120? s21 parameter vs. frequency scale: 0.002 / div. 0? 30? 60? 90? 120? 150? 180? e150? e90? e60? e30? e120? s12 parameter vs. frequency 10 5 4 3 2 1.5 1 .8 e2 e3 e4 e5 e1 0 .6 .4 .2 0 e.2 e.4 e.6 e.8 e1 e1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 s22 parameter vs. frequency test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 470 k g2s g test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 470 k g2s g test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 470 k g2s g test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 470 k g2s g
BB304C 10 sparameter (v ds = v g1 = 9v, v g2s = 6v, r g = 470k w , zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.996 ?.3 2.74 174.0 0.00096 98.6 0.985 ?.9 100 0.993 ?0.9 2.73 168.0 0.00130 84.4 0.991 ?.5 150 0.987 ?6.6 2.68 162.3 0.00203 83.6 0.990 ?.5 200 0.978 ?1.9 2.66 156.3 0.00285 72.3 0.988 ?.4 250 0.972 ?7.4 2.63 150.4 0.00335 69.7 0.985 ?1.6 300 0.954 ?3.2 2.57 144.3 0.00385 68.3 0.982 ?4.0 350 0.943 ?8.2 2.50 138.7 0.00455 63.2 0.979 ?6.2 400 0.925 ?3.2 2.43 133.3 0.00488 55.4 0.975 ?8.4 450 0.910 ?8.0 2.37 128.0 0.00526 59.8 0.971 ?1.0 500 0.893 ?2.5 2.30 122.6 0.00522 56.1 0.967 ?3.0 550 0.880 ?7.4 2.24 117.5 0.00498 53.2 0.962 ?5.2 600 0.861 ?2.1 2.17 112.7 0.00512 49.1 0.957 ?7.3 650 0.847 ?6.1 2.10 108.1 0.00497 53.4 0.952 ?9.4 700 0.829 ?9.9 2.02 103.6 0.00455 53.6 0.947 ?1.6 750 0.816 ?4.1 1.96 99.1 0.00418 51.6 0.943 ?3.7 800 0.804 ?8.2 1.91 94.8 0.00372 55.7 0.937 ?5.8 850 0.791 ?2.4 1.85 80.4 0.00329 62.4 0.933 ?8.0 900 0.779 ?6.1 1.79 86.3 0.00275 73.0 0.928 ?0.0 950 0.764 ?9.5 1.73 82.2 0.00233 82.4 0.921 ?2.1 1000 0.753 ?2.4 1.68 78.3 0.00258 105.1 0.918 ?4.2
BB304C 11 package dimensions unit: mm 0.16 0 ~ 0.1 0.2 + 0.1 e 0.06 0.65 0.6 1.25 0.425 1.25 0.425 0.9 0.1 0.65 0.65 1.3 2.0 0.2 0.3 + 0.1 e 0.05 0.3 + 0.1 e 0.05 0.4 + 0.1 e 0.05 0.3 + 0.1 e 0.05 2.1 0.3 3 2 4 1 hitahi code eiaj jedec cmpak-4 sc-82ab
BB304C 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:

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