vishay siliconix si4812bdy document number: 73038 s-83039-rev. d, 29-dec-08 www.vishay.com 1 n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 available ? little foot ? plus power mosfet ? 100 % r g tested mosfet product summary v ds (v) r ds(on) ( )i d (a) 30 0.016 at v gs = 10 v 9.5 0.021 at v gs = 4.5 v 7.7 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 30 0.50 v at 1.0 a 1.4 s s d s g d d d so-8 5 6 7 8 t op v i e w 2 3 4 1 ordering information: si4812bdy-t1-e3 (lead (pb)-free) SI4812BDY-T1-GE3 (lead (pb)-free and halogen-free) n-channel mosfet g s schottky diode d notes: a. surface mounted on fr4 board. b. t 10 s. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit 10 s steady state drain-source voltage (mosfet) v ds 30 v reverse voltage (schottky) 30 gate-source voltage (mosfet) v gs 20 continuous drain current (t j = 150 c) (mosfet) a, b t a = 25 c i d 9.5 7.3 a t a = 70 c 7.7 5.9 pulsed drain current (mosfet) i dm 50 continuous source current (mosfet diode conduction) a, b i s 2.1 1.2 average forward current (schottky) i f 1.4 0.8 pulsed forward current (schottky) i fm 30 single pulse avalanche current l = 0.1 mh i as 5 avalanche energy e as 1.25 mj maximum power dissipation (mosfet) a, b t a = 25 c p d 2.5 1.4 w t a = 70 c 1.6 0.9 maximum power dissipation (schottky) a, b t a = 25 c 2.0 1.2 t a = 70 c 1.3 0.8 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter device symbol typical maximum unit maximum junction-to-ambient (t 10 s) a mosfet r thja 40 50 c/w schottky 50 60 maximum junction-to-ambient (t = steady state) a mosfet 72 90 schottky 85 100 maximum junction-to-foot (t = steady state) a mosfet r thjf 18 23 schottky 24 30
www.vishay.com 2 document number: 73038 s-83039-rev. d, 29-dec-08 vishay siliconix si4812bdy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. mosfet and schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 13v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current (mosfet and schottky) i dss v ds = 30 v, v gs = 0 v 0.004 0.100 ma v ds = 30 v, v gs = 0 v, t j = 100 c 0.7 10 v ds = 30 v, v gs = 0 v, t j = 125 c 3.0 20 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 9.5 a 0.013 0.016 v gs = 4.5 v, i d = 7.7 a 0.0165 0.021 forward transconductance a g fs v ds = 15 v, i d = 9.5 a 45 s schottky diode forward voltage a v sd i s = 1.0 a, v gs = 0 v 0.45 0.50 v i s = 1.0 a, v gs = 0 v, t j = 125 c 0.33 0.42 dynamic b total gate charge q g v ds = 15 v, v gs = 5 v, i d = 9.5 a 8.5 13 nc gate-source charge q gs 3 gate-drain charge q gd 2.6 gate resistance r g 0.3 0.7 1.1 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 15 25 ns rise time t r 13 20 turn-off delay time t d(off) 20 30 fall time t f 815 source-drain reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/s 22 35
document number: 73038 s-83039-rev. d, 29-dec-08 www.vishay.com 3 vishay siliconix si4812bdy typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge v ds - drain-to-source voltage (v) - drain current (a) i d 0 10 20 30 40 50 012345 v gs = 10 thru 4 v 3 v - on-resistance ( ) r ds(on) i d - drain current (a) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 102030405060 v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 0246810 v ds = 15 v i d = 9.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-source voltage (v) - drain current (a) i d 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t c = 125 c - 55 c 25 c v ds - drain-to-source voltage (v) c - capacitance (pf) 0 260 520 780 1040 1300 0 5 10 15 20 25 30 c rss c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 9.5 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
www.vishay.com 4 document number: 73038 s-83039-rev. d, 29-dec-08 vishay siliconix si4812bdy typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage reverse current (schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd - source-to-drain voltage (v) - source current (a) i s t j = 150 c t j = 25 c 50 1 0.1 10 125 150 0.00001 1 10 t j - junction temperature (c) - reverse current (ma) i r 0 255075100 10 v 0.001 0.01 0.1 20 v 30 v 0.0001 on-resistance vs. gate-to-source voltage single pulse power (mosfet) - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 0246810 i d = 9.5 a 0 10 20 30 40 50 power (w) time (s) 600 100 10 1 0.1 0.01 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 limited by r ds(on) * t c = 25 c single pulse 10 ms 100 ms dc 10 s 1 s v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d
document number: 73038 s-83039-rev. d, 29-dec-08 www.vishay.com 5 vishay siliconix si4812bdy typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73038 . normalized thermal transient impedance, junction-to-ambient (mosfet) square wave pulse duration (s) normalized eff ective transient thermal impedance 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 100 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 72 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 normalized thermal transient impedance, junction-to-ambient (schottky) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm square wave pulse duration (s) normalized eff ective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
