sot223 npn silicon planar high voltage transistor issue 3 ? february 1996 j features *high v ceo * low saturation voltage complementary type ? bsp15 partmarking detail ? bsp20 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 0.5 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 300 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 250 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 20 na v cb =300v emitter cut-off current i ebo 50 na v eb =5v collector-emitter saturation voltage v ce(sat) 0.5 v i c =50ma, i b =4ma* base-emitter saturation voltage v be(sat) 1.3 v i c =50ma, i b =4ma* base-emitter turn-on voltage v be(on) 2.0 v i c =100ma, v ce =10v* static forward current transfer ratio h fe 40 30 200 i c =20ma, v ce =10v* i c =30ma, v ce =10v* transition frequency f t 40 200 mhz i c =10ma, v ce =20v f = 20mhz output capacitance c obo 6pfv cb =20v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmta42 datasheet. bsp20 c c e b 3 - 61
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