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  ? semiconductor components industries, llc, 2001 november, 2001 rev. 1 1 publication order number: mjd6039/d mjd6039 darlington power transistors dpak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? available on 16 mm tape and reel for automatic handling (at4o suffix) ? monolithic construction with builtin baseemitter shunt resistors ? high dc current gain h fe = 2500 (typ) @ i c = 4.0 adc ??????????????????? ??????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ???? ???? value ?? ?? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 80 ?? ?? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ???? ???? 80 ?? ?? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ???? ???? 5 ?? ?? vdc ???????????? ???????????? collector current continuous collector current peak ???? ???? i c ???? ???? 4 8 ?? ?? adc ???????????? ???????????? base current ???? ???? i b ???? ???? 100 ?? ?? madc ???????????? ? ?????????? ? ? ?????????? ? ???????????? total power dissipation @ t c = 25  c derate above 25  c ???? ? ?? ? ? ?? ? ???? p d ???? ? ?? ? ? ?? ? ???? 20 0.16 ?? ?? ?? ?? watts w/  c ???????????? ? ?????????? ? ???????????? total power dissipation (note 1) @ t a = 25  c derate above 25  c ???? ? ?? ? ???? p d ???? ? ?? ? ???? 1.75 0.014 ?? ?? ?? watts w/  c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? 65 to +150 ?? ?? ??  c 1. these ratings are applicable when surface mounted on the minimum pad size recommended. ???????????????????? ? ?????????????????? ? ???????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ???? ???? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? r q jc ???? ???? 6.25 ??? ???  c/w ???????????? ? ?????????? ? ???????????? thermal resistance, junction to ambient (note 1) ???? ? ?? ? ???? r q ja ???? ? ?? ? ???? 71.4 ??? ? ? ? ???  c/w http://onsemi.com marking diagrams dpak case 369a style 1 silicon power transistors 4 amperes 80 volts 20 watts dpak straight leads case 369 style 1 mjd6039 yww mjd6039 = specific device code y = year ww = work week 1 4 1 4 mjd6039 yww device package shipping ordering information mjd6039 dpak 75 units/rail mjd60391 dpak straight leads 75 units/rail mjd6039t4 dpak 2500/tape & reel
mjd6039 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25  c unless otherwise noted) ?????????????????? ?????????????????? characteristic ??????? ??????? symbol ???? ???? min ???? ???? max ???? ???? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????? ? ???????????????? ? ?????????????????? collectoremitter sustaining voltage (i c = 30 madc, i b = 0) ??????? ? ????? ? ??????? v ceo(sus) ???? ? ?? ? ???? 80 ???? ? ?? ? ???? ???? ? ?? ? ???? vdc ?????????????????? ? ???????????????? ? ?????????????????? collectorcutoff current (v ce = 40 vdc, i b = 0) ??????? ? ????? ? ??????? i ceo ???? ? ?? ? ???? ???? ? ?? ? ???? 10 ???? ? ?? ? ???? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 2 adc, v ce = 4 vdc) ??????? ? ????? ? ? ????? ? ??????? h fe ???? ? ?? ? ? ?? ? ???? 1000 500 ???? ? ?? ? ? ?? ? ???? ???? ? ?? ? ? ?? ? ???? ?????????????????? ?????????????????? collectoremitter saturation voltage (i c = 2 adc, i b = 8 madc) ??????? ??????? v ce(sat) ???? ???? ???? ???? 2.5 ???? ???? vdc ?????????????????? ? ???????????????? ? ?????????????????? baseemitter on voltage (i c = 2 adc, v ce = 4 vdc) ??????? ? ????? ? ??????? v be(on) ???? ? ?? ? ???? ???? ? ?? ? ???? 2.8 ???? ? ?? ? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????? ? ???????????????? ? ?????????????????? smallsignal current gain (i c = 0.75 adc, v ce = 10 vdc, f = 1 khz) ??????? ? ????? ? ??????? h fe ???? ? ?? ? ???? 25 ???? ? ?? ? ???? ???? ? ?? ? ???? ?????????????????? ? ???????????????? ? ?????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ??????? ? ????? ? ??????? c ob ???? ? ?? ? ???? ???? ? ?? ? ???? 100 ???? ? ?? ? ???? pf 2. pulse test: pulse width  300 m s, duty cycle  2%. 0.04 0.2 2 0.1 0.06 0.4 1 4 i c , collector current (amp) v cc = 30 v i c /i b = 250 t, time (s) m 2 1 0.8 0.6 0.4 0.2 t s t f figure 1. switching times test circuit figure 2. switching times t r i b1 = i b2 t j = 25 c t d @ v be(off) = 0 pnp npn 4 0.6 v 2 approx +8 v 0 8 k scope v cc -30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 m s t r , t f 10 ns duty cycle = 1% + 4 v r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx -12 v tut r b d 1 120
mjd6039 http://onsemi.com 3 i c , collector current (amps) figure 3. thermal response figure 4. maximum rated forward biased safe operating area figure 5. power derating t, time or pulse width (ms) 1 0.01 1000 0.3 0.2 0.07 r(t), effective transient r q jc(t) = r(t) r q jc r q jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resistance (normalized) 0.7 1 v ce , collector-to-emitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limit thermal limit second breakdown lim it 10 50 2 0.1ms dc 0.1 1 3 7 10 0.5 0.1 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 50 100 200 300 500 30 20 70 0.2 single pulse d = 0.5 0.05 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount 0.7 1ms 5ms t j = 150 c curves apply below rated v ceo 357 0.1 0.01 0.05 0.5ms t c typical electrical characteristics there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 6 and 7 is based on t j(pk) = 150  c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150  c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. c, capacitance (pf) v r , reverse voltage (volts) c ib 0.04 30 1 4 10 40 t c = 25 c 200 10 50 70 100 0.1 2 6 20 20 pnp npn 0.6 0.4 0.2 0.06 figure 6. capacitance c ob
mjd6039 http://onsemi.com 4 v ce , collector-emitter voltage (volts) i c , collector current (amp) figure 7. dc current gain figure 8. collector saturation region figure 9. aono voltages 0.04 300 0.06 0.2 2 k 800 4 k h fe , dc current gain 3 k 0.1 0.6 25 c -55 c 1 k 0.4 1 6 k 400 600 24 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 0.06 0.2 2 0.1 0.6 0.4 1 4 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 1 3 1 20 50 100 i c = 0.5 a t j = 125 c v ce = 3 v t j = 125 c 1 a 2 a 4 a t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 3 v v ce(sat) @ i c /i b = 250 typical electrical characteristics 0.04 i c , collector current (amp) 0.06 0.2 0 0.1 0.6 0.4 1 - 4.8 234 + 0.8 - 4 - 3.2 - 2.4 - 1.6 - 0.8 figure 10. temperature coefficients v , temperature coefficients (mv/ c) q *applied for i c /i b < h fe /3 25 c to 150 c - 55 c to 25 c 25 c to 150 c 25 c to 150 c q vc for v be q vc for v ce(sat) 10 -1 0 -0.4 +0.2 +0.4 +0.6 -0.6 -0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base-emitter voltage (volts) , collector current (a) m i c 10 3 10 2 10 1 10 0 reverse forward 10 5 figure 11. collector cutoff region v ce = 30 v t j = 150 c 100 c 25 c figure 12. darlington schematic base emitter collector 8 k 60 npn mjd3039
mjd6039 http://onsemi.com 5 minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm
mjd6039 http://onsemi.com 6 package dimensions dpak case 369a13 issue ab style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4
mjd6039 http://onsemi.com 7 package dimensions dpak straight leads case 36907 issue m style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd6039 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd6039/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada


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