mitsubishi rf mosfet module ra55h4452m rohs compliance , 440-520mhz 55w 12.5v, 3 stage amp. for mobile radio ra55h4452m mitsubishi electric 14 march 2008 1/8 electrostatic sensitive device o bserve handling precautio n s 1 rf input (p in ) 2 gate voltage (v gg ), pow e r control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) package code: h2s 2 4 1 5 3 block diagram description the ra55h4452m is a 55-watt rf mosfet amplifier module for 12.5-volt mobile radios that operate in the 440- to 520-mhz range. the battery can be connected dire ctly to the drain of the enhancement-mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 db. the output power and drain current increase as the gate voltage increases. with a gate voltage around 4v (minimum), output power and drain current increases substantially. the nominal output power becomes availabl e at 4.5v (typical) and 5v (maximum). at v gg =5v, the typical gate current is 1 ma. this module is designed for non-linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement-mode mosfet transistors (i dd ? 0 @ v dd =12.5v, v gg =0v ) ? p out >55w, t >43% @ f=440-490mhz, p out >45w, t >35% @ f=491-520mhz, v dd =12.5v, v gg =5v , p in =50mw ? broadband frequency range: 440-520mhz ? low-power control current i gg =1ma (ty p ) at v gg =5v ? module size: 66 x 21 x 9.88 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power rohs compliance ? RA55H4452M-101 is a rohs compliant products. ? rohs compliance is indicate by the letter ?g? after the lot marking. ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. however, it is applicable to the follo wing exceptions of rohs directions. 1.lead in the glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form RA55H4452M-101 antis t atic tray, 10 modules/tray
mitsubishi rf power module rohs compliance ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 2/8 electrostatic sensitive device observe handling precautions maximum ratings (t case =+25c, unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <5v 17 v v gg gate voltage v dd <12.5v, p in =0mw 6 v p in input power 100 mw p out output power f=440-520mhz, z g =z l =50 ? 65 w t case(op) operation case temperat ure range -30 to +110 c t stg storage temperature range -40 to +110 c note.1.the above parameter s are independently guaranteed. note.2.in order to keep high reliability of the equipment, it is better to keep t he module temperature of the module is recommended to keep lower than 90c under all conditions , and to keep lower than 60c under standard conditions. electrical characteristics (t case =+25c, z g =z l =50 ? , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 440 520 mhz 55 @440-490mhz p out output power 45 @491-520mhz w 43 @440-490mhz t total efficiency 35 @491-520mhz % 2f o 2 nd harmonic -50 dbc in input vswr 3:1 ? i gg gate current v dd =12.5v,v gg =5v, p in =50mw 1 ma ? stability v dd =10.0-15.2v, p in =25-70mw, p out <65w (v gg control), load vswr=3:1 no parasitic oscillation ? ? load vswr tolerance v dd =15.2v, p in =50mw, load vswr=20:1 p out =55w (v gg control)@440-490mhz p out =45w (v gg control)@491-520mhz no degradation or destroy ? note. all parameters, conditions, ratings, and limits are subject to change without notice.
mitsubishi rf power module rohs complia nce ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 3/8 electro s ta tic sensitive device observe handling precautions typical performance (t case = + 25c, z g =z l =5 0 ? , unless otherw i se specified) o u t p ut po w e r , t o t a l e f f i ci e n cy , 2 nd , 3 rd ha rm o n i c s v e rs u s f r eq uency and in p u t v s w r v e r sus f r e q u e n c y o u t p ut po w e r , po w e r g a i n a n d o ut p u t po w e r, po w e r g a i n a n d d r a i n c urr e n t v e rs u s i n put p o w e r dra i n cur re n t v e rs u s i n put po w e r 0 10 20 30 40 50 60 70 80 43 0 4 40 4 5 0 4 6 0 47 0 4 80 4 9 0 5 0 0 51 0 5 20 5 3 0 f r e q ue nc y f ( m h z ) output power p out (w) i n put vswr in (-) 0 10 20 30 40 50 60 70 80 total efficiency t (% ) v dd =1 2 . 5 v v gg =5 v p in = 50m w p out t in 0 10 20 30 40 50 60 - 1 0- 5 0 5 1 0 1 52 0 i n pu t po w e r p in (d b m ) output power p out (dbm) p o w e r ga in gp ( d b ) 0 4 8 12 16 20 24 drain current i dd (a) f = 44 0m h z , v dd =1 2 . 5 v , v gg =5 v p ou t i dd gp 0 10 20 30 40 50 60 - 1 0- 5 0 5 1 01 52 0 i n pu t po w e r p in (d b m ) output power p out (dbm) p o w e r ga in gp ( d b ) 0 4 8 12 16 20 24 drain current i dd (a ) f = 47 0m h z , v dd =1 2 . 5 v , v gg =5 v p out gp i dd -8 0 -7 0 -6 0 -5 0 -4 0 -3 0 430 4 4 0 4 50 4 6 0 4 7 0 48 0 4 90 5 0 0 5 10 52 0 5 3 0 f r e q ue ncy f ( m h z ) harmonics (dbc) v dd =1 2 . 5 v v gg =5 v p in = 50m w 2 nd 3 rd o u t p u t po w e r , po w e r g a i n a n d o u t pu t po w e r , po w e r g a i n a n d dra i n cu rre n t v e r s u s i n p u t p o w e r d ra i n cur re nt v e r s u s i n p u t p o w e r o u t p ut p o w e r a n d d r a i n cur re nt out p u t p o w e r a n d d r a i n cur re nt v e r s us d r a in v o lt a g e v e r s u s d r a i n v o lt a g e 0 10 20 30 40 50 60 70 80 90 10 0 11 0 12 0 2 4 6 8 10 1 2 14 16 d r a i n vo l t ag e v dd (v ) outp ut p o we r p out (w) 0 2 4 6 8 10 12 14 16 18 20 22 24 dra in curre nt i dd (a) p ou t f = 440 m h z , v gg =5 v , p in = 50m w i dd 0 10 20 30 40 50 60 - 1 0- 5 0 5 1 01 52 0 i n pu t po w e r p in (db m ) outp ut p o we r p out (dbm) power gain gp(db) 0 4 8 12 16 20 24 dra in curre nt i dd (a) f = 4 90m h z , v dd = 1 2.5v , v gg =5 v p out gp i dd 0 10 20 30 40 50 60 70 80 90 10 0 11 0 12 0 24 68 1 0 1 2 1 4 1 6 d r a i n v o l t ag e v dd (v ) outp ut p o we r p out (w) 0 2 4 6 8 10 12 14 16 18 20 22 24 dra in curre nt i dd (a) p out f = 47 0m h z , v gg =5 v , p in = 50m w i dd 0 10 20 30 40 50 60 - 1 0- 5 0 5 1 01 5 2 0 in p u t p o w e r p in (db m ) outp ut p o we r p out (dbm) power gain gp(db) 0 4 8 12 16 20 24 dra in curre nt i dd (a) f = 52 0m h z , v dd = 12.5v , v gg =5 v p ou t gp i dd
mitsubishi rf power module rohs complia nce ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 4/8 electro s ta tic sensitive device observe handling precautions typical performance (t case = + 25c, z g =z l =5 0 ? , unless otherw i se specified) o u t p u t p o w e r a n d dra i n curre nt o u t p u t p o w e r a n d dra i n curre nt v e r s us d r a in v o lt a g e v e r s u s d r a in v o lt a g e o u t p u t p o w e r a n d dra i n curre nt o u t p u t p o w e r a n d dra i n curre nt v e r s u s g a t e v o l t a g e v e r su s g a t e v o l t a g e o u t p u t p o w e r a n d dra i n curre nt o u t p u t p o w e r a n d dra i n curre nt v e r s u s g a t e v o l t a g e v e r su s g a t e v o l t a g e 0 10 20 30 40 50 60 70 80 90 2. 5 3 3. 5 4 4. 5 5 5. 5 g a t e v o l t ag e v gg (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f = 44 0m h z , v dd = 12. 5v , p in =5 0 m w i dd 0 10 20 30 40 50 60 70 80 90 100 110 120 2 4 6 8 1 0 12 14 16 d r ai n v o l t ag e v dd (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 20 22 24 drain current i dd (a) p out f = 49 0m h z , v gg =5 v , p in =5 0 m w i dd 0 10 20 30 40 50 60 70 80 90 2. 5 3 3. 5 4 4. 5 5 5 . 5 g a t e vo l t ag e v gg (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f = 47 0m h z , v dd =1 2 . 5 v , p in = 50m w i dd 0 10 20 30 40 50 60 70 80 90 2. 5 3 3. 5 4 4. 5 5 5. 5 g a t e v o l t ag e v gg (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f = 49 0m h z , v dd = 12. 5v , p in =5 0 m w i dd 0 10 20 30 40 50 60 70 80 90 100 110 120 2 4 6 8 10 12 14 1 6 d r ai n v o l t ag e v dd (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 20 22 24 drain current i dd (a) p out f = 5 20m h z , v gg =5 v , p in =5 0 m w i dd 0 10 20 30 40 50 60 70 80 90 2. 5 3 3. 5 4 4. 5 5 5. 5 g a t e vo l t ag e v gg (v ) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f = 52 0m h z , v dd =1 2 . 5 v , p in = 50m w i dd
mitsubishi rf power module rohs complia nce ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 5/8 electro s ta tic sensitive device observe handling precautions 12.0 1 16.5 1 43.5 1 55.5 1 66.0 0.5 60.0 0.5 51.5 0.5 3.0 0.3 7.25 0.8 14.0 1 21.0 0.5 9.5 0.5 2.0 0.5 2-r2 0.5 17.0 0.5 ?0.60 0.15 4.0 0.3 5 1 2 3 4 3.1 +0.6/-0.4 7.5 0.5 2.3 0.3 (50.4) 0.09 0.02 (9.88) 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) outline drawing ( mm )
mitsubishi rf power module rohs complia nce ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 6/8 electro s ta tic sensitive device observe handling precautions 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) test block diagram equivalent circuit equivalent circuit c1, c2: 4700pf, 22uf in parallel 1 5 2 3 4 signal generator attenuator pre- amplifier attenuator pow e r meter directional coupler z g =50 ? z l =50 ? c1 c2 + - dc pow e r supply v dd - + dc pow e r supply v gg 2 1 3 4 dut 5 spectrum analy z er pow e r meter attenuator directional coupler
mitsubishi rf power module rohs compliance ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 7/8 electrostatic sensitive device observe handling precautions precautions, recommendations, and application information: construction: this module consists of an alumina substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. t he mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (e ventually inductors), chip c apacitors, and resistors form the bias and matching circuits. wire leads solder ed onto the alumina substr ate provide the dc and rf connection. following conditions must be avoided: a) bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) defluxing solvents reacting with the resin coating on the mosfet chips (for example, trichloroethylene) d) frequent on/off switching that caus es thermal expansion of the resin e) esd, surge, overvoltage in combi nation with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropria te esd precautions are required. mounting: heat sink flatness must be less than 50 m (a heat sink t hat is not flat or particles between module and heat sink may cause the ceramic substrate in the module to cr ack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). a thermal compound between module and heat sink is re commended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. the module must first be screwed to the heat sink, then t he leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 0.4 to 0.6 nm. soldering and defluxing: this module is designed for manual soldering. the leads must be soldered after the module is screwed onto the heat sink. the temperature of the lead (terminal) soldering should be lower than 350c and shorter than 3 second. ethyl alcohol is recommend for removing flux. trichl oroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out =55w, v dd =12.5v and p in =50mw each stage transistor operating conditions are: stage p in (w) p out (w) r th(ch-case) (c/w) i dd @ t =35% (a) v dd (v) 1 st 0.05 1.5 23.0 0.28 2 nd 1.5 13.0 2.4 3.30 3 rd 13.0 55.0 1.2 8.70 12.5 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch-case) are: t ch1 = t case + (12.5v x 0.28 -1.5 + 0.05w) x 23.0c/w = t case + 47.2 c t ch2 = t case + (12.5v x 3.30a - 13.0w + 1.5w) x 2.4c/w = t case + 71.4 c t ch3 = t case + (12.5v x 8.70a - 55.0w + 13.0w) x 1.2c/w = t case + 80.1 c for long-term reliability, it is best to keep the module case temperature (t case ) below 90c. for an ambient temperature t air =60c and p out =55w, the required thermal resistance r th (case-air) = ( t case - t air ) / ( (p out / t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case-air) = (90c - 60c) / (55w/35% ? 55w + 0.05w) = 0.29 c/w when mounting the module with the thermal resistance of 0.29 c/w, the channel temperature of each stage transistor is: t ch1 = t air + 77.2 c t ch2 = t air + 101.4 c t ch3 = t air + 110.1 c the 175c maximum rating for the channel temperat ure ensures application under derated conditions.
mitsubishi rf power module rohs complia nce ra55h4452m ra55h4452m mitsubishi electric 14 march 2008 8/8 electro s ta tic sensitive device observe handling precautions output pow e r control: depending on linearity, the following two methods are recommended to control the output power: a) non-linear fm modulation: by the gate voltage (v gg ). when the gate voltage is close to zero, the rf input signal is attenuated up to 60 db and only a small leakage current flows from the battery into the drain. around v gg =4v, the output power and drain cu rrent increases substantially. around v gg = 4 .5v (typic al) to v gg =5v (maximum), the nominal out put power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain?s qui escent current for the required linearity. oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to t he module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module show s oscillation, the following may be checked: a) do the bias decoupling capacitors have a lo w inductance pass to the case of the module? b) is the load impedance z l =50 ? ? c) is the source impedance z g =50 ? ? frequent on/off sw itching: in base stations, frequent on/off switchi ng can cause thermal expansion of the re sin that coats the transistor chips and can result in reduced or no output power. the bond wire s in the resin will break after long-term thermally induced mechanical stress. quality : mitsubishi electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. this module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. currently, most returned modules show failure s such as esd, substrate crack, and transistor burnout, which are caused by improper handling or exc eeding recommended operating conditions. few degradation failures are found. keep safety first in y our circuit designs! mitsubishi electric corporation puts t he maximum effort into making semiconduc tor products better and more reliable, but there is alw a y s the possibility that tr ouble may occur. t r ouble w i th semiconductors may lead to personal injury , fire o r property damage. remember to give due c onsideration to safety w hen making y our circuit designs, w i th appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material, or (iii) prevention aga inst any malfunction or mishap.
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