discrete power & signal technologies n sourced from process d3. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 200 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 symbol parameter value units w iv working inverse voltage 75 v i o average rectified current 200 ma i f dc forward current 300 ma i f recurrent peak forward current 400 ma i f(surge) peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 4.0 a a t stg storage temperature range -65 to +200 c t j operating junc tion temperature 175 c symbol characteristic max units 1n/fdll 914/a/b / 4148 / 4448 p d total device dissipation derate above 25 c 500 3.33 mw mw/ c r q ja thermal resistanc e, j unction to ambient 300 c/w 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 color band marking device 1st band 2nd band fdll914 black brown fdll914a black gray fdll914b brown black fdll916 black red fdll916a black white fdll916b brown brown fdll4148 black brown fdll4448 brown black high conductance fast diode ll-34 the placement of the expansion gap has no relationship to the location of the cathode terminal do-35
electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units b v breakdown voltage i r = 100 m a i r = 5.0 m a 100 75 v v i r reverse current v r = 20 v v r = 20 v, t a = 150 c v r = 75 v 25 50 5.0 na m a m a v f forward voltage 1n914b / 4448 1n916b 1n914 / 916 / 4148 1n914a / 916a 1n916b 1n914b / 4448 i f = 5.0 ma i f = 5.0 ma i f = 10 ma i f = 20 ma i f = 30 ma i f = 100 ma 620 630 720 730 1.0 1.0 1.0 1.0 mv mv v v v v c o diode capacitance 1n916/a/b / 4448 1n914/a/b / 4148 v r = 0, f = 1.0 mhz v r = 0, f = 1.0 mhz 2.0 4.0 pf pf t rr reverse recover y time i f = 10 ma, v r = 6.0 v (60 ma), i rr = 1.0 ma, r l = 100 w 4.0 ns typical characteristics reverse voltage vs reverse current bv - 1.0 to 100 ua 1 2 3 5 10 20 30 50 100 110 120 130 140 150 160 i - reverse current (ua) v - reverse voltage ( v) r r ta= 25c reverse current vs reverse voltage ir - 10 to 100 v general rule: the reverse current of a diode will approximately double for every ten (10) degree c increase in temperature 10 20 30 50 70 100 0 20 40 60 80 100 120 v - reverse voltage (v) i - reverse current (na) r r ta= 25c forward voltage vs forward current vf - 1 to 100 ua 1 2 3 5 10 20 30 50 100 250 300 350 400 450 500 550 i - forward current (ua) v - forward voltage (mv) f f ta= 25c forward voltage vs forward current vf - 0.1 to 100 ma 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 750 i - forward current (ma) v - forward voltage (mv) f f ta= 25c v r 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 high conductance fast diode (continued)
typical characteristics (continued) average rectified current (io) & forward current (i ) versus ambient temperature (t ) 050100150 0 100 200 300 400 500 t - ambient temperature ( c) i - current (ma) a a i - forward current steady state - ma o r f io - average rectified current - ma forward voltage vs forward current vf - 10 to 800 ma 10 20 30 50 100 200 300 500 0.6 0.8 1 1.2 1.4 1.6 i - forward current (ma) v - forward voltage (v) f f ta= 25c vf - 0.01 - 20 ma (-40 to +65 deg c) forward voltage vs ambient temperature 0.01 0.03 0.1 0.3 1 3 10 300 400 500 600 700 800 900 i - forward current (ma) v - forward voltage (mv) f f typical ta= -40c ta= +25c ta= +65c capacitance vs reverse voltage vr = 0.0 to 15 v 02468101214 0.75 0.8 0.85 0.9 reverse voltage (v) capacitance (pf) ta= 25c reverse recovery time vs reverse current if = 10 ma - irr = 1.0 ma - rloop = 100 ohms 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 4 reverse current (ma) reverse recovery (ns) ta= 25c power derating curve 0 50 100 150 200 0 100 200 300 400 500 i - average temperature ( c) p - power dissipation (mw) o d o do-35 sot-23 v f p d 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 high conductance fast diode (continued)
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