1 tm file number 4888 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. star*power is a trademark of intersil corporation. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 fsgj264r radiation hardened, segr resistant n-channel power mosfet intersil star*power rad hard mosfets have been speci?ally developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system designer both extremely low r ds(on) and gate charge allowing the development of low loss power subsystems. star*power gold fets combine this electrical capability with total dose radiation hardness up to 100k rads while maintaining the guaranteed performance for single event effects (see) which the intersil fs families have always featured. the intersil family of star*power fets includes a series of devices in various voltage, current and package styles. the portfolio consists of star*power and star*power gold products. star*power fets are optimized for total dose and r ds(on) while exhibiting see capability at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated voltage for an let of 82 with extremely low gate charge characteristics. this mosfet is an enhancement-mode silicon-gate power ?ld effect transistor of the vertical dmos (vdmos) structure. it is speci?ally designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. as with conventional mosfets these radiation hardened mosfets offer ease of voltage control, fast switching speeds and ability to parallel switching devices. reliability screening is available as either txv or space equivalent of mil-prf-19500. formerly available as type ta45233w. features 42a, 250v, r ds(on) = 0.049 ? uis rated total dose - meets pre-rad speci?ations to 100k rad (si) single event - safe operating area curve for single event effects - see immunity for let of 82mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 5v off-bias dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i as photo current - 21na per-rad (si)/s typically neutron - maintain pre-rad speci?ations for 1e13 neutrons/cm 2 - usable to 1e14 neutrons/cm 2 symbol packaging to-254aa ordering information rad level screening level part number/brand 10k engineering samples FSGJ264D1 100k txv fsgj264r3 100k space fsgj264r4 tm d g s caution: beryllia warning per mil-prf-19500 refer to package speci?ations. d s g data sheet july 2000
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d fsgj264r units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v ds 250 v drain to gate voltage (r gs = 20k ? ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr 250 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 42 a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i d 27 a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 160 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gs 30 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 192 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p t 77 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 w/ o c single pulsed avalanche current, l = 100 h, (see test figure) . . . . . . . . . . . . . . . . . . . . . . . . i as 85 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 42 a pulsed source current (body diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 160 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) 300 o c weight (typical) 9.3 (typical) g caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v 250 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c - - 5.5 v t c = 25 o c 2.0 - 4.5 v t c = 125 o c 1.0 - - v zero gate voltage drain current i dss v ds = 200v, v gs = 0v t c = 25 o c--25 a t c = 125 o c - - 250 a gate to source leakage current i gss v gs = 30v t c = 25 o c - - 100 na t c = 125 o c - - 200 na drain to source on-state voltage v ds(on) v gs = 12v, i d = 42a - - 2.18 v drain to source on resistance r ds(on)12 i d = 27a, v gs = 12v t c = 25 o c - 0.041 0.049 ? t c = 125 o c - - 0.096 ? turn-on delay time t d(on) v dd = 125v, i d = 42a, r l = 3.0 ? , v gs = 12v, r gs = 2.35 ? - - 35 ns rise time t r - - 70 ns turn-off delay time t d(off) - - 70 ns fall time t f - - 15 ns total gate charge q g(12) v gs = 0v to 12v v dd = 125v, i d = 42a - 100 115 nc gate charge source q gs -3545nc gate charge drain q gd -3545nc gate charge at 20v q g(20) v gs = 0v to 20v - 160 - nc threshold gate charge q g(th) v gs = 0v to 2v - 12 - nc plateau voltage v (plateau) i d = 42a, v ds = 15v - 7.5 - v input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz - 5600 - pf output capacitance c oss - 875 - pf reverse transfer capacitance c rss -35-pf thermal resistance junction to case r jc - - 0.65 o c/w fsgj264r
3 source to drain diode speci?ations parameter symbol test conditions min typ max units forward voltage v sd i sd = 42a - - 1.2 v reverse recovery time t rr i sd = 42a, di sd /dt = 100a/ s - - 590 ns reverse recovery charge q rr - 6.8 - c electrical speci?ations up to 100k rad t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma 250 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma 2.0 4.5 v gate to body leakage (notes 2, 3) i gss v gs = 30v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = 200v - 25 a drain to source on-state volts (notes 1, 3) v ds(on) v gs = 12v, i d = 42a - 2.18 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = 12v, i d = 27a - 0.049 ? notes: 1. pulse test, 300 s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = 12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) note 4 test symbol environment (note 5) applied v gs bias (v) (note 6) maximum v ds bias (v) ion species typical let (mev/mg/cm) typical range ( ) single event effects safe operating area seesoa br 37 36 -20 250 i 60 32 -10 250 au 82 28 -5 200 au 82 28 -10 150 notes: 4. testing conducted at brookhaven national labs. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). performance curves unless otherwise speci?d figure 1. single event effects safe operating area figure 2. typical see signature curve 0 0 -20 let = 60mev/mg/cm 2 , range = 32 let = 37mev/mg/cm 2 , range = 36 let = 82mev/mg/cm 2 , range = 28 v ds (v) 200 -4 -8 -12 -16 v gs (v) 24 300 250 150 100 50 fluence = 1e5 ions/cm 2 (typical) temp = 25 o c v ds (v) let = 82 gold let = 60 iodine let = 37 bromine 240 200 160 120 80 40 0 -30 0 -5 -10 -15 -20 -25 v gs (v) 280 -35 -40 -45 -50 fsgj264r
4 figure 3. typical drain inductance required to limit gamma dot current to i as figure 4. maximum continuous drain current vs temperature figure 5. forward bias safe operating area figure 6. basic gate charge waveform figure 7. typical normalized r ds(on) vs junction temperature figure 8. typical output characteristics performance curves unless otherwise speci?d (continued) 300 100 10 limiting inductance (h) drain supply (v) 1000 ilm = 10a 300a 1e-4 1e-5 1e-6 30 100a 30a 1e-7 1e-3 i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 48 8 40 32 24 16 100 10 1 1 v ds , drain to source voltage (v) 10 100 0.1 500 i d , drain current (a) 100 s operation in this area may be limited by r ds(on) 10ms 1ms 1000 t c = 25 o c charge q gd q g v g q gs 12v 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) normalized r ds(on) pulse duration = 250ms, v gs = 12v, i d = 27a 10 8 6 4 2 0 200 160 120 80 40 0 v ds , drain to source voltage (v) i d , drain to source current (a) v gs = 6v v gs = 8v v gs = 10v v gs = 12v v gs = 14v v gs = 6 v descending order fsgj264r
5 figure 9. normalized maximum transient thermal response figure 10. unclamped inductive switching performance curves unless otherwise speci?d (continued) normalized thermal response (z qjc ) t, rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 -2 10 -1 10 0 10 1 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc + t c p dm t 1 t 2 300 100 10 1 0.01 0.1 1 t av , time in avalanche (ms) 10 0.001 i as , avalanche current (a) t av = (l/r) ln [(i as *r) / (1.3 rated bv dss - v dd ) + 1] t av = (l) (i as ) / (1.3 rated bv dss - v dd ) if r = 0 starting t j = 150 o c starting t j = 25 o c if r 0 test circuits and waveforms figure 11. unclamped energy test circuit figure 12. unclamped energy waveforms t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0v 50 ? 50 ? 50v-150v i as + - electronic switch opens when i as is reached current transformer v dd v ds bv dss t p i as t av fsgj264r
6 screening information screening is performed in accordance with the latest revision in effect of mil-prf-19500, (screening information table). figure 13. resistive switching test circuit figure 14. resistive switching waveforms test circuits and waveforms (continued) v ds dut r gs 0v v gs = 12v v dd r l t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on delta tests and limits (jantxv equivalent, jans equivalent) t c = 25 o c, unless otherwise speci?d parameter symbol test conditions max units gate to source leakage current i gss v gs = 30v 20 (note 7) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 7) a drain to source on resistance r ds(on) t c = 25 o c at rated i d 20% (note 8) ? gate threshold voltage v gs(th) i d = 1.0ma 20% (note 8) v notes: 7. or 100% of initial reading (whichever is greater). 8. of initial reading. screening information test jantxv equivalent jans equivalent unclamped inductive switching v gs(peak) = 20v, l = 0.1mh; limit = 85a v gs(peak) = 20v, l = 0.1mh; limit = 85a thermal response t h = 100ms; v h = 25v; i h = 4a; limit = 100mv t h = 100ms; v h = 25v; i h = 4a; limit = 100mv gate stress v gs = 45v, t = 250 sv gs = 45v, t = 250 s pind optional required pre burn-in tests (note 9) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) mil-prf-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours mil-prf-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 9) all delta parameters listed in the delta tests and limits table all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 160 hours mil-prf-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 10% 5% final electrical tests (note 9) mil-prf-19500, group a, subgroup 2 mil-prf-19500, group a, subgroups 2 and 3 note: 9. test limits are identical pre and post burn-in. additional tests parameter symbol test conditions max units safe operating area soa v ds = 200v, t = 10ms 0.8 a thermal impedance ? v sd t h = 500ms; v h = 25v; i h = 4a 200 mv fsgj264r
7 rad hard data packages - intersil power transistors txv equivalent 1. rad hard txv equivalent - standard data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certificate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - pre and post burn-in read and record data d. group a - attributes data sheet e. group b - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - pre and post rad read and record data class s - equivalents 1. rad hard ??equivalent - standard data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. ??equivalent - optional data package a. certificate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - pre and post radiation data fsgj264r
8 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil ltd. 8f-2, 96, sec. 1, chien-kuo north, taipei, taiwan 104 republic of china tel: 886-2-2515-8508 fax: 886-2-2515-8369 fsgj264r to-254aa 3 lead jedec to-254aa hermetic metal package d l q h 1 e e 1 j 1 a 1 a e p b 0.065 r max. typ. 12 3 symbol inches millimeters notes min max min max a 0.249 0.260 6.33 6.60 - a 1 0.040 0.050 1.02 1.27 - b 0.035 0.045 0.89 1.14 2, 3 d 0.790 0.800 20.07 20.32 - e 0.535 0.545 13.59 13.84 - e 0.150 typ 3.81 typ 4 e 1 0.300 bsc 7.62 bsc 4 h 1 0.245 0.265 6.23 6.73 - j 1 0.140 0.160 3.56 4.06 4 l 0.520 0.560 13.21 14.22 - p 0.139 0.149 3.54 3.78 - q 0.110 0.130 2.80 3.30 - notes: 1. these dimensions are within allowable dimensions of rev. a of jedec outline to-254aa dated 11-86. 2. add typically 0.002 inches (0.05mm) for solder coating. 3. lead dimension (without solder). 4. position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension d. 5. die to base beo isolated, terminals to case ceramic isolated. 6. controlling dimension: inch. 7. revision 1 dated 1-93. warning! beryllia warning per mil-prf-19500 packages containing beryllium oxide (beo) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its?compounds.
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