all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 9 rev. 02, 2005-11-01 dab mode 2 drive-up at 28 v v dd = 28 v, i dq = 550 ma, ? = 1500 mhz -42 -38 -34 -30 -26 -22 34 35 36 37 38 39 40 41 42 output power, avg. (dbm) 10 14 18 22 26 30 drain efficiency (%) drain efficiency regrowth spectral regrowth (dbc) . PTF140451E ptf140451f description the PTF140451E and ptf140451f are 45-watt, goldmo s ? fets intended for dab applications. these devices are characterized for digital audio broadcast operation in the 1450 to 1550 mhz band. thermally-enhanced packages provide the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. PTF140451E package 30265 thermally-enhanced high power rf ldmos fets 45 w, 1450 ? 1550 mhz rf characteristics dab measurements (not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 550 ma, p out = 12.5 w avg , ? = 1500 mhz, dab mode 2, d 975 khz ? c characteristic symbol min typ max unit spectral regrowth rgth ? ?30 ? dbc gain g ps ? 18 ? db drain efficiency h d ? 27.5 ? % ptf140451f package 31265 features ? thermally-enhanced packages ? broadband internal matching ? typical dab mode 2 performance at 1500 mhz, 28 v - average output power = 12.5 w - efficiency = 27.5% - spectral regrowth = ?30 dbc - d 975 khz ? c ? typical dab mode 2 performance at 1500 mhz, 32 v - average output power = 15.5 w - efficiency = 27% - spectral regrowth = ?30 dbc - d 975 khz ? c ? typical cw performance, 1500 mhz, 28 v - output power = 60 w - linear gain = 18 db - efficiency = 54% at p?1db ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr at 28 v, 45 w (cw) output power ? pb-free and rohs compliant *see infineon distributor for future availability.
PTF140451E ptf140451f data sheet 2 of 9 rev. 02, 2005-11-01 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 550 ma, p out = 45 w pep , ? = 1500 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 18 ? db drain efficiency h d 35 36.5 ? % intermodulation distortion imd ? ?32 ?30 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i d = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.02 ? w operating gate voltage v ds = 28 v, i dq = 550 ma v gs 2.5 3.3 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 175 w above 25c derate by 1.0 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c) r q jc 1.0 c/w ordering information type package outline package description marking PTF140451E 30265 thermally-enhanced slotted flange, single-ended PTF140451E ptf140451f 31265 thermally-enhanced earless flange, single-ended ptf140451f *see infineon distributor for future availability.
PTF140451E ptf140451f data sheet 3 of 9 rev. 02, 2005-11-01 cw power sweep (p?1db) v dd = 28 v, i dq = 550 ma, ? = 1500 mhz 15 16 17 18 19 20 0 10 20 30 40 50 60 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) drain efficiency t case = 25c t case = 90c gain cw sweep in a broadband test fixture v dd = 28 v, i dq = 550 ma, p out (cw) = 12 w 10 15 20 25 30 35 40 45 1400 1450 1500 1550 1600 frequency (mhz) -40 -35 -30 -25 -20 -15 -10 -5 0 input return loss (db) gain drain efficiency return loss gain (db) and drain efficiency (%) . 3rd order intermodulation distortion vs. output power for various i dq v dd = 28, ? = 1500 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 32 34 36 38 40 42 44 46 48 output power, pep (dbm) im3 (dbc) i dq = 450 ma i dq = 500 ma i dq = 650 ma i dq = 550 ma i dq = 600 ma 2-tone drive-up at optimum current v dd = 28 v, i dq = 550 ma, ? = 1500 mhz, tone spacing = 1 mhz -65 -55 -45 -35 -25 32 36 40 44 48 output power, pep (dbm) imd (dbc) 5 15 25 35 45 drain efficiency (%) 3rd order 7th 5th drain efficiency typical performance
PTF140451E ptf140451f data sheet 4 of 9 rev. 02, 2005-11-01 dab mode 2 drive-up at 32 v i dq = 550 ma, ? = 1500 mhz -42 -38 -34 -30 -26 -22 35 36 37 38 39 40 41 42 43 output power, avg. (dbm) 10 14 18 22 26 30 drain efficiency (%) drain efficiency regrowth spectral regrowth (dbc) . gate-source voltage vs. temperature voltage normalized to typical gate voltage, series show current. 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (oc) normalized bias voltage 0.30 a 1.10 a 2.00 a 2.85 a 3.75 a 4.50 a broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1400 9.1 ?2.65 4.20 ?3.70 1450 9.1 ?1.81 4.10 ?3.50 1500 9.3 ?0.98 4.10 ?2.90 1550 9.5 0.15 4.00 ?2.70 1600 9.9 0.60 4.00 ?2.20 0 . 1 0 . 3 0 . 2 0 . 1 0 . 1 0 . 2 < - - - w a v e l e n 0 . 0 1600 mhz 1400 mhz 1600 mhz 1400 mhz z load z source z 0 = 50 w typical performance (cont.)
PTF140451E ptf140451f data sheet 5 of 9 rev. 02, 2005-11-01 reference circuit reference circuit schematic for 1500 mhz circuit assembly information dut PTF140451E or ptf140451f ldmos transistor pcb 0.76 mm [0.030"] thick, e r = 4.5 tmm4 2 oz. copper, both sides microstrip electrical characteristics at 1500 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.035 l, 50.0 w 3.81 x 1.47 0.150 x 0.058 l 2 0.043 l, 41.0 w 4.60 x 1.93 0.181 x 0.076 l 3 0.064 l, 41.0 w 6.91 x 1.93 0.272 x 0.076 l 4 0.010 l, 41.0 w 1.04 x 1.93 0.041 x 0.076 l 5 0.012 l, 14.7 w 1.19 x 7.62 0.047 x 0.300 l 6 0.050 l, 8.0 w 4.90 x 15.24 0.193 x 0.600 l 7 0.150 l, 60.0 w 16.69 x 0.97 0.657 x 0.038 l 8 0.246 l, 54.0 w 26.85 x 1.24 1.057 x 0.049 l 9 0.087 l, 9.0 w 8.48 x 13.46 0.334 x 0.530 l 10 0.045 l, 17.0 w 4.57 x 6.25 0.180 x 0.246 l 11 0.083 l, 50.0 w 9.02 x 1.52 0.355 x 0.060 l 12 0.0113 l, 50.0 w 1.22 x 1.52 0.048 x 0.060 1 electrical characteristics are rounded. 1 4 0 4 5 1 e f _ s c h _ 9 - 2 8 - 0 5 rf_in rf_out r3 2k v r4 2k v r2 1.3k v lm7805 qq1 r5 10 v 33pf 2.1pf l 1 l 8 10 v r8 dut c9 l 7 .1f c5 r6 10f 35v c4 r7 .01f c6 33pf c7 c8 l 2 l 3 l 4 l 5 l 6 1k v 1k v l 9 33pf c17 0.9pf c18 l 10 l 11 1.4pf c16 33pf .02f 1f c10 c11 c12 1f c13 c14 .1f c15 22f 50v l1 v dd c1 0.001f v dd c2 0.001f bcp56 q1 c3 0.001f r1 1.2k v l 12
PTF140451E ptf140451f data sheet 6 of 9 rev. 02, 2005-11-01 140451out_01 140451in_01 22 hhd 4v6 140451ef_assy-05-09-16 v dd v dd l 1 c5 c4 r6 r7 c9 c17 c18 c15 c10 c8 c16 r4 q1 qq1 c3 c1 r1 c2 r2 r5 lm c7 r3 c6 c14 c13 c12 c11 r8 reference circuit (cont.) reference circuit assembly diagram (not to scale)* component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 366-1655-2-nd c5, c14 capacitor, 0.1 f digi-key pcc104bct-nd c6 capacitor, 0.01 f atc 200b 103 c7 capacitor, 33 pf atc 100a 330 c8, c10, c17 ceramic capacitor, 33 pf atc 100b 330 c9 ceramic capacitor, 2.1 pf atc 100b 2r1 c11 capacitor, 0.02 f atc 200b 203 c12, c13 ceramic capacitor, 1.0 f digi-key 445-1411-1-nd c15 electrolytic capacitor, 22 f, 50 v digi-key pce3374ct-nd c16 ceramic capacitor, 1.4 pf atc 100b 1r4 c18 ceramic capacitor, 0.9 pf atc 100b 0r9 l1 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r8 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor, 1 k-ohms digi-key p1kect-nd *gerber files for this circuit are available on request. 140451ef_dtl v dd c5 c4 r6 r7 r4 q1 qq1 c3 c1 r1 c2 r2 r5 lm c7 r3 c6
PTF140451E ptf140451f data sheet 7 of 9 rev. 02, 2005-11-01 package outline specifications package 30265 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] 20.31 [.800] 10.160.25 [.400.010] 2x 2.590.38 [.107 .015] flange 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] c l c l (45 x 2.03 [.080]) s d g 2x r1.60 [.063] lid 10.160.25 [.400.010] 0.0381 [.0015] -a- 3.480.38 [.137.015] 1.02 [.040] sph 1.57 [.062] 15.600.51 [.614.020] h-30265-2-1-2303
PTF140451E ptf140451f data sheet 8 of 9 rev. 02, 2005-11-01 265-cases_31265 (45 x 2.03 [.080]) 2x 2.590.51 [.102.020] s d g lid 10.160.25 [.400.010] flange 10.16 [.400] 2x 7.11 [.280] 10.160.25 [.400.010] 10.16 [.400] 1.02 [.040] 3.56.38 [.140.015] sph 1.57 [.062] 0.025 [.001] -a- 10.16 [.400] 15.49.51 [.610.020] r1.27 [r.050] 4x r0.63 [r.025] max package outline specifications (cont.) package 31265 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products
data sheet 9 of 9 rev. 02, 2005-11-01 PTF140451Ef confidential ? limited distribution revision history: 2005-11-01 data sheet previous version: 2005-09-07, preliminary data sheet page subjects (major changes since last revision) all add graphs and circuit information. remove preliminary designation. goldmo s ? is a registered trademark of infineon technologies ag. edition 2005-11-01 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2005. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international
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