1 composite transistors xn04683 (xn4683) silicon npn epitaxial planer transistor (tr1) silicon pnp epitaxial planer transistor (tr2) for high-frequency amplification/for general amplification features two elements incorporated into one package. reduction of the mounting area and assembly cost by one half. basic part number of element 2sc2404 + 2sb0709a(2sb709a) absolute maximum ratings (ta=25?c) unit: mm marking symbol: er internal connection parameter symbol ratings unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 3v collector current i c 15 ma collector to base voltage v cbo ?0 v collector to emitter voltage v ceo ?0 v emitter to base voltage v ebo ? v collector current i c ?00 ma peak collector current i cp ?00 ma total power dissipation p t 200 mw junction temperature t j 150 ?c storage temperature t stg ?5 to +150 ?c tr1 overall tr2 1 : collector (tr1) 4 : collector (tr2) 2 : base (tr2) 5 : base (tr1) 3 : emitter (tr2) 6 : emitter (tr1) eiaj : sc?4 mini type package (6?in) 2.8 +0.2 ?.3 1.5 0.65 0.15 0.65 0.15 1 6 5 4 3 2 1.45 0.1 0.95 0.95 1.9 0.1 +0.25 ?.05 0.3 +0.1 ?.05 0.5 +0.1 ?.05 2.9 +0.2 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.05 0.16 +0.1 ?.06 0.1 to 0.3 61 2 tr2 tr1 5 43 note.) the part number in the parenthesis shows conventional part number.
2 composite transistors xn04683 electrical characteristics (ta=25?c) tr1 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 0 30 v emitter to base voltage v ebo i e = 10 a, i c = 0 3 v forward current transfer ratio h fe1 v ce = 6v, i c = ?ma 40 260 base to emitter voltage v be v cb = 6v, i e = ?ma 720 mv feedback capacitance cre v cb = 6v, i e = ?ma, f = 10.7mhz 0.8 1 pf transition frequency f t v cb = 6v, i e = ?ma, f = 200mhz 450 650 mhz noise figure nf v cb = 6v, i e = ?ma, f = 100mhz 3.3 db power gain pg v cb = 6v, i e = ?ma, f = 100mhz 24 db tr2 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = ?0 a, i e = 0 ?0 v collector to emitter voltage v ceo i c = ?ma, i b = 0 ?0 v emitter to base voltage v ebo i e = ?0 a, i c = 0 7 v collector cutoff current i cbo v cb = ?0v, i e = 0 0.1 a i ceo v ce = ?0v, i b = 0 ?00 a forward current transfer ratio h fe v ce = ?0v, i c = ?ma 160 460 collector to emitter saturation voltage v ce(sat) i c = ?00ma, i b = ?0ma ?0.3 ?0.5 v transition frequency f t v cb = ?0v, i e = 1ma, f = 200mhz 80 mhz collector output capacitance c ob v cb = ?0v, i e = 0, f = 1mhz 2.7 pf
3 composite transistors xn04683 common characteristics chart p t ?ta characteristics charts of tr1 i c ?v ce i c ?i b i c ?v be v ce(sat) ?i c h fe ?i c f t ?i e 0 0 160 40 120 80 100 300 200 400 ambient temperature ta ( ? c ) total power dissipation p t ( mw ) 0 0 4 8 12 16 12 10 8 6 4 2 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b =100 a 80 a 60 a 40 a 20 a 0 0 40 80 120 160 12 10 8 6 4 2 base current i b ( a ) collector current i c ( ma ) v ce =6v ta=25 ? c 0 0 2.0 1.6 1.2 0.8 0.4 30 25 20 15 10 5 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =6v ta=75 ? c 25 ? c 25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 360 300 240 180 120 60 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =6v ta=75 ? c 25 ? c 25 ? c 0.1 0.3 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) 0 1200 1000 800 600 400 200 v cb =6v ta=25 ? c
4 composite transistors xn04683 z rb ?i e c re ?v ce c ob ?v cb p g ?i e nf ?i e characteristics charts of tr2 i c ?v ce i c ?i b i b ?v be 0.1 0.3 1 3 10 reverse transfer impedance z rb ( ? ) emitter current i e ( ma ) 0 120 100 80 60 40 20 v cb =6v f=2mhz ta=25 ? c 0.1 0.3 1 3 10 30 100 0 2.4 2.0 1.6 1.2 0.8 0.4 common emitter reverse transfer capacitance c re ( pf ) collector to emitter voltage v ce ( v ) i c =1ma f=10.7mhz ta=25 ? c 0 0.1 0.3 10 20 30 40 35 25 15 5 1 3 10 30 100 power gain pg ( db ) emitter current i e ( ma ) f=100mhz r g =50 ? ta=25 ? c v ce =10v 6v 0 0.1 0.3 12 10 8 6 4 2 1 3 10 30 100 noise figure nf ( db ) emitter current i e ( ma ) f=100mhz r g =50 ? ta=25 ? c v ce =6v, 10v 0 0 18 2 4 6 8 10 12 14 16 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 300 a 250 a 200 a 150 a 100 a 50 a 0 0 100 200 300 400 60 50 40 30 20 10 base current i b ( a ) collector current i c ( ma ) v ce = 5v ta=25 ? c 0 0 0.4 0.8 1.2 1.6 400 350 300 250 200 150 100 50 base to emitter voltage v be ( v ) base current i b ( a ) v ce = 5v ta=25 ? c 0 1.2 1.0 0.8 0.6 0.4 0.2 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) 030 525 10 20 15 f=1mhz i e =0 ta=25 ? c
5 composite transistors xn04683 i c ?v be v ce(sat) ?i c h fe ?i c f t ?i e c ob ?v cb 0 0 2.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce = 5v ta=75 ? c 25 ? c 25 ? c 0.001 0.003 1 3 0.01 0.03 0.1 0.3 1 3 10 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 600 500 400 300 200 100 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 40 80 120 160 140 100 60 20 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb = 10v ta=25 ? c 0 1 5 20 2 8 7 6 5 4 3 2 1 3 50 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c
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