central semiconductor corp. tm process CP707 small signal transistor pnp - darlington transistor chip princip al device types cmpta63 cmpta64 cxta64 czta64 mpsa63 mpsa64 process epitaxial planar die size 27 x 27 mils die thickness 9.0 mils base bonding pad area 5.3 x 3.8 mils emitter bonding pad area 5.3 x 6.5 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r3 (1-august 2002) gross die per 4 inch w afer 15,440
central semiconductor corp. tm process CP707 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (1-august 2002)
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