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www.irf.com 1 06/11/03 IRF6601 notes through are on page 11 application specific mosfets ideal for cpu core dc-dc converters low conduction losses low switching losses low profile (<0.7 mm) dual sided cooling compatible compatible with exisiting surface mount techniques t he IRF6601 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operating at higher frequencies. the IRF6601 has been optimized for parameters that are critical in synchronous buck converters including rds(on), gate charge and cdv/dt-induced turn on immunity. the IRF6601 offers particularly low rds(on) and high cdv/dt immunity for synchronous fet applications. description hexfet power mosfet directfet isometric v dss r ds(on) max qg 20v 3.8m ? @v gs = 10v 30nc 5.0m ? @v gs = 4.5v absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 35 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.0 ??? max. 26 20 200 20 20 85 -40 to + 150 3.6 0.029 2.3 42
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 19 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.2 3.8 m ? ??? 4.4 5.0 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -4.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 100 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 50 ??? ??? s q g total gate charge ??? 30 45 q gs1 pre-vth gate-to-source charge ??? 5.4 ??? q gs2 post-vth gate-to-source charge ??? 2.9 ??? nc q gd gate-to-drain charge ??? 12 ??? q godr gate charge overdrive ??? 9.2 ??? see fig. 16 q sw switch char g e (q gs2 + q gd ) ???15??? q oss output charge ??? 48 ??? nc t d(on) turn-on delay time ??? 61 ??? t r rise time ???21??? t d(off) turn-off delay time ??? 28 ??? ns t f fall time ???22??? c iss input capacitance ??? 3440 ??? c oss output capacitance ??? 2430 ??? pf c rss reverse transfer capacitance ??? 380 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a e ar repetitive avalanche ener gy mj diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 26 (body diode) a i sm pulsed source current ??? ??? 200 (body diode) v sd diode forward voltage ??? 0.83 1.2 v t rr reverse recovery time ??? 60 90 ns q rr reverse recovery charge ??? 94 140 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 16v, v gs = 0v, t j = 70c v ds = 10v v gs = 20v v gs = -20v mosfet symbol clamped inductive load v ds = 10v, i d = 21a conditions 0.36 ? = 1.0mhz v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v 21 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 26a max. v gs = 4.5v, i d = 21a v ds = v gs , i d = 250a v ds = 16v, v gs = 0v t j = 25c, i f = 21a di/dt = 100a/s t j = 25c, i s = 21a, v gs = 0v showing the integral reverse p-n junction diode. ??? v gs = 4.5v typ. ??? ??? i d = 16a v gs = 0v v ds = 15v i d = 21a 65
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 26a 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 20s pulse width tj = 25c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 20s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.7v 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c oss c iss c rss 0 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 10203040 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 10v i d = 16a
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 i , drain current (a) d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

-75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 14a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 14b. switching time waveforms
1 0.1 % + - 25 50 75 100 125 150 0 40 80 120 160 e , single pulse avalanche energy (mj) as i d top bottom 9.4a 17a 21a

www.irf.com 7 fig 15.
for n-channel hexfet power mosfets ? ? ? ! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period !"!# + - + + + - - - ? "# $ % ? " ! & '('' ? $ )) ? '('' * " ( fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
8 www.irf.com control fet

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#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " (

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synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic
www.irf.com 9 directfet outline dimension, mt outline (medium size can, t-designation)
10 www.irf.com directfet board footprint, mt outline (medium size can, t-designation) directfet tape and reel dimension (showing component orientation).
www.irf.com 11 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.24mh r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%.
surface mounted on 1 in. square cu board. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/03 directfet part marking

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