microwave power gaas fet microwave semiconductor tim5964-4ul technical data features ? high power ? broad band internally matched fet p1db=36.5dbm at 5.9ghz to 6.4ghz ? high gain ? hermetically sealed package g1db=10.0db at 5.9ghz to 6.4ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 35.5 36.5 ? power gain at 1db gain compression point g 1db db 9.0 10.0 ? drain current i ds1 a ? 1.1 1.3 gain flatness g db ? ? 0.6 power added efficiency add v ds = 10 v idsset=0.9a f = 5.9 to 6.4ghz % ? 37 ? 3rd order intermodulation distortion im 3 dbc -44 -47 ? drain current i ds2 two-tone test po= 25.5dbm (single carrier level) a ? 1.1 1.3 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg) : rg= 150 ? (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 1.5a ms ? 900 ? pinch-off voltage v gsoff v ds = 3v i ds = 15ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 2.6 ? gate-source breakdown voltage v gso i gs = -50 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 4.5 6.0 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jun. 2009
tim5964-4ul absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 3.5 total power dissipation (tc= 25 c ) p t w 25 channel temperature t ch c 175 storage t stg c -65 to +175 package outline (2-11d1b) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2
tim5964-4ul rf performance 3 34 35 36 37 38 39 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 po (dbm) output power vs. frequency v ds = 10v i ds ? 1.1a pin= 26.5dbm frequency (ghz) add 31 32 33 34 35 36 37 38 39 40 21 23 25 27 29 31 pin (dbm) po (dbm) 0 10 20 30 40 50 60 70 80 90 add (%) po output power vs. input power f= 6.15ghz v ds = 10v i ds ? 1.1a
tim5964-4ul 0 10 20 30 0 40 80 120 160 200 tc () p t (w) power dissipation vs. case temperature -60 -50 -40 -30 -20 21 23 25 27 29 31 im 3 (dbc) v ds = 10v i ds ? 1.1a f= 6.15ghz f= 5mhz im3 vs. output po wer characteristics po(dbm), single carrier level 4
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