switching diode array steering diode tvs array? www. microsemi . com scottsdale division mmad1104 and MMAD1104E3 mmad1104, e3 description appearance these low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-pin package for use as steering diodes protecting up to eight i/o ports from esd, eft, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). an external tvs diode may be added between the positive supply line and gr ound to prevent overvoltage on the supply rail. they may also be used in fast switching core-driver applications. this includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. t hese arrays offer many advantages of integrated circuits such as high-dens ity packaging and improved reliability. this is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various di screte packages that may not be as user friendly in pc board mounting. th ey are available with either tin-lead plating terminations or as rohs compliant with annealed matte-tin finish by adding an ?e3? suffix to the part number. top viewing pin layout important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? 16 diode array / protects 8 lines ? molded 14-pin soic package ? ul 94v-0 flammability classification ? low capacitance 1.5 pf per diode ? switching speeds less than 5 ns ? rohs compliant devices available by adding ?e3? suffix ? iec 61000-4 compatible 61000-4-2 (esd): air 15kv, contact ? 8 kv 61000-4-4 (eft): 40a ? 5/50 ns 61000-4-5 (surge): 12a, 8/20 s ? low capacitance steering diode protection for high frequency data lines ? rs-232 & rs-422 interface networks ? ethernet: 10 base t ? computer i / o ports ? lan ? switching core drivers maximum ratings mechanical and packaging ? operating temperatur e: -55c to +150c ? storage temperature: -55c to +150c ? forward surge current: 2 amps (8.3 ms) 12 amps (8/20 s ) ? continuous forward current: 400 ma (one diode) ? power dissipation (p d ): 1500 mw (total) ? solder temperatures: 260c for 10 s (maximum) ? case: void-free transfer molded thermosetting epoxy body meeting ul94v-0 flammability classification ? terminals: tin-lead or rohs compliant annealed matte-tin plating solderable per mil-std-750 method 2026 ? marking: msc logo, mmad1104 or MMAD1104E3 and date code. pin #1 is to the left of the dot or indent on top of package ? weight: 0.127 grams (approximate) ? tape & reel packaging: 2500 pcs (standard) ? carrier tube packaging: 55 pcs electrical ch aracteristics per line @ 25c unless otherwise specified breakdown voltage v br @ i br =100a v working peak reverse voltage v rwm v leakage current i r t a = 25 c a leakage current i r t a = 150 c a capacitance c @ 0 v pf reverse recovery time t rr ns forward voltage v f i f = 10 ma v forward voltage v f i f = 100 ma v part number min max max @v r max @v r typ max max max mmad1104 MMAD1104E3 90 75 0.200 20 300 20 1.5 5.0 1.00 1.20 microsemi scottsdale division page 1 copyright ? 2005 6-28-2005 rev k 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
switching diode array steering diode tvs array? www. microsemi . com scottsdale division mmad1104 and MMAD1104E3 mmad1104, e3 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be appl ied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage current that will flow at t he specified voltage and temperature. c capacitance: the capacitance of the tvs as defin ed @ 0 volts at a frequency of 1 mhz and stated in picofarads. outline and circuit microsemi scottsdale division page 2 copyright ? 2005 6-28-2005 rev k i/o port su pp l y rail ( +v cc ) gnd (or -v cc ) steering diode application fi g ure 1 inches millimeters dim min max min max a 0.336 0.344 8.53 8.7 4 b 0.150 0.158 3.81 4.01 c 0.053 0.069 1.35 1.75 d 0.011 0.021 0.28 0.53 f 0.016 0.050 0.41 1.27 g 0.050 bsc 01.27 bsc j 0.006 0.010 0.15 0.25 k 0.004 0.008 0.10 0.20 l 0.189 0.206 4.80 5.23 p 0.228 0.244 5.79 6.19 outline circuit configuration pad layout 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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