data sheet silicon transistor 2sc3583 microwave low noise amplifier npn silicon epitaxial transistor data sheet document no. p10360ej4v1ds00 (4th edition) date published march 1997 n printed in japan 1984 ? description the 2sc3583 is an npn epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from vhf band to uhf band. low- noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. this is achieved by direct nitride passivated base surface process (dnp process) which is an nec proprietary new fabrication technique. features ? nf 1.2 db typ. @f = 1.0 ghz ? ga 13 db typ. @f = 1.0 ghz absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 65 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg 65 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1 v, i e = 0 dc current gain h fe * 50 100 250 v ce = 8 v, i c = 20 ma gain bandwidth product f t 9 ghz v ce = 8 v, i c = 20 ma feed-back capacitance c re ** 0.35 0.9 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 11 13 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz maximum available gain mag 15 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz noise figure nf 1.2 2.5 db v ce = 8 v, i e = 7 ma, f = 1.0 ghz * pulse measurement pw 350 s, duty cycle 2 % ** the emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. h fe classification class r33/q * r34/r * r35/s * marking r33 r34 r35 h fe 50 to 100 80 to 160 125 to 250 * old specification / new specification package dimensions (units: mm) 1.5 2 1 3 marking pin connections 1. 2. 3. emitter base collector 2.80.2 2.90.2 1.1 to 1.4 0 to 0.1 0.95 0.3 0.95 0.4 +0.1 - 0.05 0.4 +0.1 - 0.05 0.16 +0.1 - 0.06 0.65 +0.1 - 0.15
2 2sc3583 typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-w h fe -dc current gain v ce = 8 v 0 5 10 15 0.5 1 5 10 50 70 i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db v ce = 8 v f = 1.0 ghz 0.1 0.5 0.3 0.2 0.7 1 3 2 13 257102030 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 mhz 0 12 8 4 16 20 0.1 0.3 0.2 0.5 0.7. 1.0 2.0 3.0 f-frequency-ghz insertion gain, maximum available gain vs. frequency mag-maximum available gain-db |s 21e | 2 -insertion gain -db v ce = 8 v i c = 20 ma 1 5 3 2 7 10 30 20 13 257102030 i c -collector current-ma gain bandwidth produut vs. collector current f t -gain bandwidth product-mhz v ce = 8 v free air |s 21e | 2 mag
3 2sc3583 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 8 v f = 1.0 ghz s-parameter v ce = 8.0 v, i c = 5.0 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.728 0.490 0.343 0.253 0.202 0.176 0.176 0.179 0.186 0.211 45.3 74.5 93.2 110.1 131.1 148.9 162.8 173.9 163.3 151.1 12.107 8.097 6.260 4.623 4.004 3.250 3.021 2.575 2.520 2.183 138.7 114.2 102.3 90.1 83.6 75.8 69.4 63.4 58.9 53.4 0.036 0.065 0.079 0.090 0.101 0.125 0.144 0.160 0.188 0.202 66.2 61.6 61.6 61.2 61.3 60.8 60.0 59.8 59.1 58.9 0.825 0.675 0.582 0.529 0.500 0.470 0.448 0.427 0.406 0.386 21.6 26.6 29.0 28.6 30.1 31.4 33.4 34.8 37.5 44.5 v ce = 8.0 v, i c = 20 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.366 0.194 0.124 0.077 0.063 0.065 0.074 0.108 0.116 0.134 66.8 88.9 104.3 132.0 156.4 179.5 168.0 147.0 137.6 131.2 19.757 10.502 7.591 5.446 4.653 3.754 3.460 2.934 2.870 2.479 116.9 98.8 91.1 82.0 77.6 71.6 66.5 61.9 58.2 53.4 0.033 0.055 0.072 0.095 0.107 0.135 0.164 0.178 0.205 0.221 62.6 70.6 74.6 73.2 72.1 72.1 70.1 69.6 66.3 64.0 0.587 0.485 0.453 0.419 0.413 0.392 0.369 0.347 0.333 0.312 22.5 23.8 24.3 23.2 24.2 26.4 29.9 32.2 34.3 42.1
4 2sc3583 s-parameter a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.02 0.48 0.01 0.49 0 0 0.49 0.01 0.48 0.02 0.47 0.03 0.46 0.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.29 0.21 0.28 0.22 0.27 0.23 0.26 0.24 0.25 0.25 0.24 0.26 0.23 0.27 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 ( +jx CCCC z o ) 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 reactance component ( r CCCC z o ) ne g a t ive r e a c t a n c e c om p o n e n t p os i t i v e r e a c t a n c e co m p o n e n t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 ( - jx CCCC z o ) 20 20 0.2 0.4 0.6 0.8 1.0 s 11e , s 22e -frequency s 21e -frequency 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 4 0 8 12 16 20 s 21e 0.2 ghz 0.2 ghz i c = 5 ma i c = 20 ma 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 0.04 0 0.08 0.12 0.16 0.20 s 12e 2.0 ghz i c = 20 ma i c = 5 ma s 12e -frequency v ce = 8 v 200 mhz step condition v ce = 8 v condition v ce = 8 v condition 2.0 ghz 2.0 ghz 0.2 ghz 0.2 ghz i c = 20 ma i c = 5 ma i c = 5 ma s 11e s 22e i c = 20 ma 0.2 ghz
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2sc3583 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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