DIM250WHS06-S000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com key parameters v ces 600v v ce(sat) * (typ) 2.1v i c (max) 250a i c(pk) (max) 500a *(measured at the power busbars and not the auxiliary terminals) features n - channel high switching speed low forward voltage drop isolated base applications pwm motor contro l ups the powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600v to 3300v and currents up to 3600a. the DIM250WHS06-S000 is a half bridge 600v n channel enhancement mode insulated gate bipolar transistor (igbt) module. the module is suitable for a variety of medium voltage applications in motor drives and power conversion. the igbt has a wide reverse bias safe operating area (rbsoa) for ultimate reliability in demanding applications. these modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. typical applications include dc motor drives, ac pwm drivesand ups systems. ordering information order as: DIM250WHS06-S000 note: when ordering, use complete part number. fig. 1 half bridge circuit diagram fig. 2 electrical connections - (not to scale) outline type code: w (see package details for further information) pds5676-1.3 february 2004 DIM250WHS06-S000 half bridge igbt module 3(c1) 1(e1c2) 2(e2) 6(g 2 ) 7(e 2 ) 5(e 1 ) 4(g 1 )
DIM250WHS06-S000 2/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v - t case = 65?c 1ms, t case = 95?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz symbol v ces v ges i c i c(pk) p max i 2 t v isol absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety prec autions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise units v v a a w ka 2 s kv max. 600 20 250 500 1157 tbd 2.5 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value isolation voltage - per module symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m6 parameter thermal resistance - transistor thermal resistance - diode thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque units ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm max. 108 203 15 150 125 125 5 5 typ. - - - - - - - - min. - - - - - ?0 3 2.5 thermal and mechanical ratings internal insulation: al 2 o 3 clearance: 13mm baseplate material: cu cti (critical tracking index): 175 creepage distance: 24mm
DIM250WHS06-S000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/8 www.dynexsemi.com note: ? measured at the power busbars and not the auxiliary terminals. l* is the circuit inductance + l m test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c = 10ma, v ge = v ce v ge = 15v, i c = 250a v ge = 15v, i c = 250a, , t case = 125?c dc t p = 1ms i f = 250a i f = 250a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage input capacitance module inductance internal transistor resistance - per arm electrical characteristics t case = 25?c unless stated otherwise. symbol i ces i ges v ge(th) v ce(sat) ? i f i fm v f ? c ies l m r int units ma ma a v v v a a v v nf nh m ? max. 1 10 1 7.5 2.6 2.8 250 500 1.8 1.8 - - typ. - - - 5.5 2.1 2.3 - - 1.5 1.5 27 20 0.23 min. - - - 4.5 - - - - - - - - -
DIM250WHS06-S000 4/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - - typ. 600 250 20 330 130 12 2 15 185 4 min. - - - - - - - - - - test conditions i c = 250a v ge = 15v v ce = 300v r g(on) = r g(off) = 4.7 ? l ~ 100nh i f = 250a, v r = 300v, di f /dt = 3600a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e on q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 650 500 30 400 160 18 23 200 5 min. - - - - - - - - - test conditions i c = 250a v ge = 15v v ce = 300v r g(on) = r g(off) = 4.7 ? l ~ 100nh i f = 250a, v r = 300v, di f /dt = 3600a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec
DIM250WHS06-S000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/8 www.dynexsemi.com typical characteristics fig.3 typical output characteristics fig.4 typical output characteristics 0 collector-emitter voltage, v ce - (v) collector current, i c - (a) 100 50 200 300 400 150 250 350 450 500 0 1.0 2.0 3.0 4.0 5.0 6.0 common emitter t case = 125 ? c v ce is measured at power busbars and not the auxiliary terminals v ge = 10v v ge = 12v v ge = 15v v ge = 20v 0 50 100 150 200 500 012.0345 collector-emitter voltage, v ce - (v) collector current, i c - (a) 450 250 300 350 400 common emitter t case = 25 ? c v ce is measured at power busbars and not the auxiliary terminals v ge = 10v v ge = 12v v ge = 15v v ge = 20v fig.4 typical switching energy vs collector current 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 collector current, i c - (a) switching energy, e sw - (mj) conditions: t case = 125oc v cc = 300v r g = 4.7 ohms e on e off e rec fig.5 typical switching energy vs gate resistance 0 5 10 15 20 25 30 35 40 2 10121416 gate resistance, r g - (ohms) switching energy, e sw - (mj) 468 e off e on e rec conditions: t case = 125oc v cc = 300v i c = 250a
DIM250WHS06-S000 6/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig.8 transient thermal impedance 1 10 100 1000 0.001 0.01 1 0.1 10 pulse width, t p - (s) transient thermal impedance, z th (j-c) - ( c/kw ) transistor diode igbt r i (?c/kw) i (ms) diode r i (?c/kw) i (ms) 1 2.5411 0.1069 4.6432 0.0895 2 10.0645 4.363 25.8208 2.6571 3 13.6426 21.9182 24.1609 17.3886 4 81.7155 92.4022 147.9106 71.8108 fig.7 reverse bias safe operating area 0 100 200 300 400 600 500 700 800 900 0 200 400 600 800 collector-emitter voltage, v ce - (v) collector current, i c - (a) t j = 125 ? c v ge = 15v r g = 4.7 ohms module i c chip i c fig.6 diode typical forward characteristics 0 50 100 150 200 250 300 350 400 450 500 0 0.5 1.0 1.5 2.0 2.5 3.0 foward voltage, v f - (v) foward current, i f - (a) t j = 25 ? c t j = 125 ? c v f is measured at power busbars and not the auxiliary terminals fig.7 diode reverse bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 700 reverse voltage, v r - (v) reverse recovery current, i rr - (a) ir(a) t j = 125 ? c
DIM250WHS06-S000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 7/8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. fig. 15 package details nominal weight: 420g module outline type code: w 3(c1) 1(e1c2) 2(e2) 6(g 2 ) 7(e 2 ) 5(e 1 ) 4(g 1 )
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 5 3 . fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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