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switchmode ? npn bipolar power transistor for switching power supply applications the bul146/bul146f have an applications specific stateoftheart die designed for use in fluorescent electric lamp ballasts to 130 watts and in switchmode power supplies for all types of electronic equipment. these high voltage/high speed transistors offer the following: ? improved efficiency due to low base drive requirements: high and flat dc current gain fast switching no coil required in base circuit for turnoff (no current tail) ? full characterization at 125 c ? two packages choices: standard to220 or isolated to220 ? parametric distributions are tight and consistent lottolot ? bul146f, case 221d, is ul recognized to 3500 v rms : file # e69369 maximum ratings rating sym- bol bul146 bul146f unit collectoremitter sustaining voltage v ceo 400 vdc collectoremitter breakdown voltage v ces 700 vdc emitterbase voltage v ebo 9.0 vdc collector current continuous peak(1) i c i cm 6.0 15 adc base current continuous peak(1) i b i bm 4.0 8.0 adc rms isolation voltage: (2) (for 1 sec, r.h. 30%, t c = 25 c) v isol1 v isol2 v isol3 4500 3500 1500 volts total device dissipation (t c = 25 c) derate above 25 c p d 100 0.8 40 0.32 watts w/ c operating and storage temperature t j , t stg 65 to 150 c thermal characteristics rating sym- bol bul146 bul146f unit thermal resistance junction to case junction to ambient r q jc r q ja 1.25 62.5 3.125 62.5 c/w maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds t l 260 c on semiconductor ? semiconductor components industries, llc, 2001 june, 2001 rev. 5 1 publication order number: bul146/d bul146 bul146f power transistor 6.0 amperes 700 volts 40 and 100 watts bul146 case 221a09 to220ab case 221d02 isolated to220 type bul146f
bul146 bul146f http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 400 vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo 100 m adc collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 125 c) collector cutoff current (v ce = 500 v, v eb = 0) (t c = 125 c) i ces 100 500 100 m adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo 100 m adc (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics baseemitter saturation voltage (i c = 1.3 adc, i b = 0.13 adc) baseemitter saturation voltage (i c = 3.0 adc, i b = 0.6 adc) v be(sat) 0.82 0.93 1.1 1.25 vdc collectoremitter saturation voltage (i c = 1.3 adc, i b = 0.13 adc) (t c = 125 c) collectoremitter saturation voltage (i c = 3.0 adc, i b = 0.6 adc) (t c = 125 c) v ce(sat) 0.22 0.20 0.30 0.30 0.5 0.5 0.7 0.7 vdc dc current gain (i c = 0.5 adc, v ce = 5.0 vdc) (t c = 125 c) dc current gain (i c = 1.3 adc, v ce = 1.0 vdc) (t c = 125 c) dc current gain (i c = 3.0 adc, v ce = 1.0 vdc) (t c = 125 c) dc current gain (i c = 10 madc, v ce = 5.0 vdc) h fe 14 12 12 8.0 7.0 10 30 20 20 13 12 20 34 dynamic characteristics current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) f t 14 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob 95 150 pf input capacitance (v eb = 8.0 v) c ib 1000 1500 pf dynamic saturation volt- (i c = 1.3 adc i 300 madc 1.0 m s (t c = 125 c) 2.5 6.5 y a csaua o o age: determined 1.0 m s and 30 m s res p ectively after i b1 = 300 madc v cc = 300 v) 3.0 m s (t c = 125 c) v 0.6 2.5 v 3.0 m s respectively after rising i b1 reaches 90% of final i b1 (i c = 3.0 adc i 0 6 adc 1.0 m s (t c = 125 c) v ce(dsat) 3.0 7.0 v final i b1 (see figure 18) i b1 = 0.6 adc v cc = 300 v) 3.0 m s (t c = 125 c) 0.75 1.4
bul146 bul146f http://onsemi.com 3 switching characteristics: resistive load (d.c. 10%, pulse width = 20 m s) turnon time (i c = 1.3 adc, i b1 = 0.13 adc i b2 = 0.65 adc, v cc = 300 v) (t c = 125 c) t on 100 90 200 ns turnoff time (t c = 125 c) t off 1.35 1.90 2.5 m s turnon time (i c = 3.0 adc, i b1 = 0.6 adc i b1 = 1.5 adc, v cc = 300 v) (t c = 125 c) t on 90 100 150 ns turnoff time (t c = 125 c) t off 1.7 2.1 2.5 m s switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) fall time (i c = 1.3 adc, i b1 = 0.13 adc i b2 = 0.65 adc) (t c = 125 c) t fi 115 120 200 ns storage time (t c = 125 c) t si 1.35 1.75 2.5 m s crossover time (t c = 125 c) t c 200 210 350 ns fall time (i c = 3.0 adc, i b1 = 0.6 adc i b2 = 1.5 adc) (t c = 125 c) t fi 85 100 150 ns storage time (t c = 125 c) t si 1.75 2.25 2.5 m s crossover time (t c = 125 c) t c 175 200 300 ns fall time (i c = 3.0 adc, i b1 = 0.6 adc i b2 = 0.6 adc) (t c = 125 c) t fi 80 210 180 ns storage time (t c = 125 c) t si 2.6 4.5 3.8 m s crossover time (t c = 125 c) t c 230 400 350 ns
bul146 bul146f http://onsemi.com 4 h fe , dc current gain i c , collector current (amps) t j = 125 c c, capacitance (pf) 0.01 100 i c , collector current (amps) figure 1. dc current gain @ 1 volt h fe , dc current gain figure 2. dc current gain @ 5 volts v ce , voltage (v) figure 3. collector saturation region figure 4. collectoremitter saturation voltage figure 5. baseemitter saturation region figure 6. capacitance 10 1 110 100 10 1 0.01 0.1 1 10 2 0.01 i b , base current (ma) 10 1 0.01 0.01 i c collector current (amps) 0.1 1.2 1 0.8 0.4 0.01 i c , collector current (amps) 0.1 1 10 1000 100 1 v ce , collector-emitter voltage (volts) 1 1000 1 0 0.1 110 10000 10 0.1 0.1 1 10 10 100 t j = 25 c t j = -20 c v ce = 1 v t j = 125 c t j = 25 c t j = -20 c v ce = 5 v i c = 1 a 2 a 3 a v ce , voltage (v) i c /i b = 10 i c /i b = 5 t j = 25 c t j = 125 c v be , voltage (v) 1.1 0.9 0.7 0.6 t j = 25 c t j = 125 c i c /i b = 5 i c /i b = 10 5 a 6 a t j = 25 c 0.5 typical static characteristics t j = 25 c f = 1 mhz c ob c ib
bul146 bul146f http://onsemi.com 5 i c , collector current (amps) figure 7. resistive switching, t on i c collector current (amps) i c , collector current (amps) t j = 125 c 0 1000 i c , collector current (amps) figure 8. resistive switching, t off t, time (ns) figure 9. inductive storage time, t si figure 10. inductive storage time, t si (h fe ) figure 11. inductive switching, t c and t fi i c /i b = 5 figure 12. inductive switching, t c and t fi i c /i b = 10 800 0 48 4000 2000 0 2500 03 h fe , forced gain 4 250 50 0 0 i c , collector current (amps) 478 200 150 50 1500 0 67 250 100 2 258 t j = 25 c i b(off) = i c /2 v cc = 300 v pw = 20 m s i c /i b = 5 t si , storage time (ns) i c = 3 a i c = 1.3 a 200 150 100 6 600 400 200 i c /i b = 5 i c /i b = 10 i b(off) = i c /2 v cc = 300 v pw = 20 m s i c /i b = 10 048 26 500 1000 1500 2500 3000 3500 t, time (ns) t, time (ns) 13467 500 1000 2000 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c 5 4000 2000 0 500 1000 1500 2500 3000 3500 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h 123 56 t, time (ns) i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c t c t fi 0478 12 3 56 t, time (ns) i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t c t fi t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 t j = 25 c t j = 125 c t j = 25 c t j = 125 c typical switching characteristics (i b2 = i c /2 for all switching)
bul146 bul146f http://onsemi.com 6 i c , collector current (amps) v ce , collector-emitter voltage (volts) h fe , forced gain t c , cross-over time (ns) 3 130 h fe , forced gain figure 13. inductive fall time t fi , fall time (ns) figure 14. inductive crossover time i c , collector current (amps) figure 15. forward bias safe operating area figure 16. reverse bias switching safe operating area figure 17. forward bias power derating 110 60 515 250 150 50 100 10 v ce , collector-emitter voltage (volts) 7 6 0 0 200 1,0 0,8 0,2 0,0 20 t c , case temperature ( c) 80 140 160 1 0.01 3 600 800 4 100 1000 dc (bul146) 5 ms v be(off) t c 125 c i c /i b 4 l c = 500 m h power derating factor 0,6 0,4 67891011121314 70 80 90 100 120 i c = 3 a i c = 1.3 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c 35 15 4 67891011121314 200 100 i c = 3 a i c = 1.3 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c 10 0.1 1 ms 10 m s 1 m s 400 2 1 4 5 0 v -1, 5 v -5 v 40 60 100 120 second breakdown derating thermal derating guaranteed safe operating area information there are two limitations on the power handling ability of a tran- sistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second break- down limitations do not derate the same as thermal limitations. al- lowable current at the voltages shown in figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j(pk) may be calculated from the data in figure 20. at any case tem- peratures, thermal limitations will reduce the power that can be han- dled to values less than the limitations imposed by second break- down. for inductive loads, high voltage and current must be sus- tained simultaneously during turnoff with the basetoemitter junction reversebiased. the safe level is specified as a reverse biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an ava- lanche mode. typical switching characteristics (i b2 = i c /2 for all switching) extended soa
bul146 bul146f http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 figure 18. dynamic saturation voltage measurements time v ce volts i b figure 19. inductive switching measurements 1 m s 3 m s 90% i b dyn 1 m s dyn 3 m s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi table 1. inductive load switching drive circuit +15 v 1 m f 150 w 3 w 100 w 3 w mpf930 +10 v 50 w common -v off 500 m f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 w 3 w 100 m f i out a 1 m f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1 0.01 t, time (ms) figure 20. typical thermal response (z q jc (t)) for bul146 r(t), transient thermal resistance (normalized) r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0.02 0.1 d = 0.5 single pulse 0.01 0.1 1 10 100 1000 0.1 1 0.05 typical thermal response
bul146 bul146f http://onsemi.com 8 r q jc (t) = r(t) r q jc r q jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 t, time (ms) figure 21. typical thermal response for bul146f r(t), transient thermal resistance (normalized) 0.2 0.1 0.01 0.10 1.00 10.00 100.00 1000 0.10 1.00 0.02 0.05 single pulse d = 0.5 typical thermal response
bul146 bul146f http://onsemi.com 9 mounted fully isolated package leads heatsink 0.110 min figure 22a. screw or clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip mounted fully isolated package leads heatsink clip 0.107 min mounted fully isolated package leads heatsink 0.107 min figure 22b. clip mounting position for isolation test number 2 figure 22c. screw mounting position for isolation test number 3 test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 i n . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not recom- mend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 23. typical mounting techniques for isolated package figure 23a. screwmounted figure 23b. clipmounted mounting information** ** for more information about mounting power semiconductors see application note an1040.
bul146 bul146f http://onsemi.com 10 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 2: pin 1. base 2. emitter 3. collector
bul146 bul146f http://onsemi.com 11 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r case 221d02 (isolated to220 type) ul recognized: file #e69369 issue d
bul146 bul146f http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bul146/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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