1 ? ha-5002/883 monolithic, wideband, high slew rate, high output current buffer description the ha-5002/883 is a monolithic, wideband, high slew rate, high output current, buffer amplifier. utilizing the advantages of the harris dielectric isolation tech- nologies, the ha-5002/883 current buffer offers 1300v/ s slew rate typically and 1000v/ s minimum with 110mhz of bandwidth. the 100ma minimum output current capability is enhanced by a 3 ? output impedance. the monolithic ha-5002/883 will replace the hybrid lh0002 with corresponding performance increases. these charac- teristics range from the 3m ? (typ) input impedance to the increased output voltage swing. monolithic design technolo- gies have allowed a more precise buffer to be developed with more than an order of magnitude smaller gain error. the voltage gain is 0.98 guaranteed minimum with a 1k ? load and 0.96 minimum with a 100 ? load. the ha-5002/883 will provide many present hybrid users with a higher degree of reliability and at the same time increase overall circuit performance. ordering information part number temperature range package ha2-5002/883 -55 o c to +125 o c8 pin can ha4-5002/883 -55 o c to +125 o c 20 lead ceramic lcc features ? this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. ? voltage gain (r l = 1k ? ) . . . . . . . . . . . . . . . . . 0.98 (min) 0.995 (typ) (r l = 100 ? ) . . . . . . . . . . . . . . . . 0.96 (min) 0.971 (typ) ? high input impedance . . . . . . . . . . . . . . . . . 1.5m ? (min) 3m ? (typ) ? low output impedance . . . . . . . . . . . . . . . . . . 5 ? (max) 3 ? (typ) ? very high slew rate . . . . . . . . . . . . . . . .1000v/ s (min) 1300v/ s (typ) ? wide small signal bandwidth. . . . . . . . . 110mhz (typ) ? high output current . . . . . . . . . . . . . . . . . 100ma (min) ? high pulsed output current . . . . . . . . . . . 400ma (max) ? monolithic dielectric isolation construction ? replaces hybrid lh0002 applications ? line driver ? data acquisition ? 110mhz buffer ? high power current booster ? high power current source ? sample and holds ? radar cable driver ? video products april 2002 spec number 511017-883 fn3705.1 pinouts ha-5002/883 (clcc) top view ha-5002/883 (metal can) top view 4 5 6 7 8 9101112 13 3212019 15 14 18 17 16 nc nc nc nc nc nc nc nc nc nc nc nc nc v 2 - v 1 + nc out in v 2 + v 1 - 2 4 6 1 3 7 5 8 out nc nc in v 1 - v 2 - v 2 + v 1 + caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2002. all rights reserved
2 ha-5002/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . 44v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . equal to supplies peak output current (50ms on, 1s off) . . . . . . . . . . . . . . . . . . 400ma junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <4000v lead temperature (soldering 10s). . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc ceramic lcc package . . . . . . . . . . . . . . 80 o c/w 30 o c/w metal can package . . . . . . . . . . . . . . . . . 160 o c/w 70 o c/w package power dissipation limit at +75 o c for t j +175 o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54w metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mw package power dissipation derating factor above +75 o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mw/ o c metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mw/ o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indica ted in the operational sections of this specification is not i mplied. ????: 1. ja is measured with the component mounted on a low effective thermal conductivity test board in free air. see tech brief tb379 for details. operating conditions operating temperature range. . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . 12v to 15v r l 100 ? table 1. dc electrical performance characteristics device tested at: v supply = 12v and 15v, r source = 50 ? , c load 10pf, v in = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max input offset voltage v io1 v sup = 15v 1 +25 o c -20 20 mv 2, 3 +125 o c, -55 o c -30 30 mv v io2 v sup = 12v 1 +25 o c -20 20 mv 2, 3 +125 o c, -55 o c -30 30 mv input bias current i b1 v sup = 15v, r s = 1k ? 1+25 o c-77 a 2, 3 +125 o c, -55 o c -10 10 a i b2 v sup = 12v, r s = 1k ? 1+25 o c-77 a 2, 3 +125 o c, -55 o c -10 10 a voltage gain 1 +av 1 v sup = 12v, r l = 1k ? , v in = 10v 1+25 o c0.98-v/v 2, 3 +125 o c, -55 o c0.98 - v/v -av 1 v sup = 12v, r l = 1k ? , v in = -10v 1+25 o c0.98-v/v 2, 3 +125 o c, -55 o c0.98 - v/v voltage gain 2 +av 2 v sup = 12v, r l = 100 ? , v in = 10v 1+25 o c0.96-v/v -av 2 v sup = 12v, r l = 100 ? , v in = -10v 1+25 o c0.96-v/v voltage gain 3 +av 3 v sup = 15v, r l = 100 ? , v in = 10v 1+25 o c0.96-v/v -av 3 v sup = 15v, r l = 100 ? , v in = -10v 1+25 o c0.96-v/v voltage gain 4 +av 4 v sup = 15v, r l = 1k ? , v in = +10v 1+25 o c0.99-v/v 2, 3 +125 o c, -55 o c0.99 - v/v -av 4 v sup = 15v, r l = 1k ? , v in = -10v 1+25 o c0.99-v/v 2, 3 +125 o c, -55 o c0.99 - v/v spec number 511017-883
3 spec number 511017-883 ha-5002/883 output voltage swing +v out1 v sup = 15v, r l = 100 ? , v in = +15v 1+25 o c10-v 2, 3 +125 o c, -55 o c10 - v -v out1 v sup = 15v, r l = 100 ? , v in = -15v 1+25 o c--10v 2, 3 +125 o c, -55 o c--10v +v out2 v sup = 15v, r l = 1k ? , v in = +15v 1+25 o c10-v 2, 3 +125 o c, -55 o c10 - v -v out2 v sup = 15v, r l = 1k ? , v in = -15v 1+25 o c--10v 2, 3 +125 o c, -55 o c--10v +v out3 v sup = 12v, r l = 1k ? , v in = +12v 1+25 o c10-v 2, 3 +125 o c, -55 o c10 - v -v out3 v sup = 12v, r l = 1k ? , v in = -12v 1+25 o c--10v 2, 3 +125 o c, -55 o c--10v output current +i out1 v sup = 15v, v out = +10v 1+25 o c 100 - ma 2, 3 +125 o c, -55 o c 100 - ma -i out1 v sup = 15v, v out = -10v 1+25 o c - -100 ma 2, 3 +125 o c, -55 o c - -100 ma +i out2 v sup = 12v, v out = +10v 1+25 o c 100 - ma 2, 3 +125 o c, -55 o c 100 - ma -i out2 v sup = 12v, v out = -10v 1+25 o c - -100 ma 2, 3 +125 o c, -55 o c - -100 ma power supply rejection ratio +psrr 1 ? v sup = 5v, v+ = +20v, v- = -15v, v+ = +10v, v- = -15v 1+25 o c54-db 2, 3 +125 o c, -55 o c54 - db -psrr 1 ? v sup = 5v, v+ = +15v, v- = -20v, v+ = +15v, v- = -10v 1+25 o c54-db 2, 3 +125 o c, -55 o c54 - db +psrr 2 ? v sup = 5v, v+ = +17v, v- = -12v, v+ = +7v, v- = -12v 1+25 o c54-db 2, 3 +125 o c, -55 o c54 - db -psrr 2 ? v sup = 5v, v+ = +12v, v- = -17v, v+ = +12v, v- = -7v 1+25 o c54-db 2, 3 +125 o c, -55 o c54 - db table 1. dc electrical performance characteristics (continued) device tested at: v supply = 12v and 15v, r source = 50 ? , c load 10pf, v in = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max
4 spec number 511017-883 ha-5002/883 power supply current +icc 1 v sup = 15v, v out = 0v 1+25 o c-10ma 2, 3 +125 o c, -55 o c- 10ma -icc 1 v sup = 15v, v out = 0v 1+25 o c-10-ma 2, 3 +125 o c, -55 o c-10 - ma +icc 2 v sup = 12v, v out = 0v 1+25 o c-10ma 2, 3 +125 o c, -55 o c- 10ma -icc 2 v sup = 12v, v out = 0v 1+25 o c-10-ma 2, 3 +125 o c, -55 o c-10 - ma table 2. ac electrical performance characteristics table 2 intentionally left blank. see ac specifications in table 3 table 3. electrical performance characteristics device characterized at: v supply = 15v or 12v, r load = 1k ? , c load 10pf, unless otherwise specified. parameters symbol conditions notes temperature limits units min max input resistance r in1 v sup = 15v 1 +25 o c1.5-m ? r in2 v sup = 12v 1 +25 o c1.5-m ? slew rate +sr 1 v sup = 15v, v out = -5v to +5v 1+25 o c 1000 - v/ s +125 o c, -55 o c 1000 - v/ s -sr 1 v sup = 15v, v out = +5v to -5v 1+25 o c 1000 - v/ s +125 o c, -55 o c 1000 - v/ s +sr 2 v sup = 12v, v out = -5v to +5v 1+25 o c 1000 - v/ s +125 o c, -55 o c 1000 - v/ s -sr 2 v sup = 12v, v out = +5v to -5v 1+25 o c 1000 - v/ s +125 o c, -55 o c 1000 - v/ s rise and fall time t r v sup = 15v or 12v, v out = 0 to +500mv 1, 2 +25 o c - 10 ns 1, 2 +125 o c, -55 o c - 10 ns t f v sup = 15v or 12v, v out = 0 to -500mv 1, 2 +25 o c - 10 ns 1, 2 +125 o c, -55 o c - 10 ns table 1. dc electrical performance characteristics (continued) device tested at: v supply = 12v and 15v, r source = 50 ? , c load 10pf, v in = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max
5 ha-5002/883 spec number 511017-883 overshoot +os v sup = 12v or 15v, v out = 0 to +500mv 1+25 o c-30% +125 o c, -55 o c- 30 % -os v sup = 12v or 15v, v out = 0 to -500mv 1+25 o c-30% +125 o c, -55 o c- 30 % quiescent power consumption pc 1 v sup = 15v, v in = 0v, i out = 0ma 1, 3 +25 o c - 300 mw +125 o c, -55 o c - 300 mw pc 2 v sup = 12v, v in = 0v, i out = 0ma 1, 3 +25 o c - 240 mw +125 o c, -55 o c - 240 mw output resistance r out1 v sup = 12v 1 +25 o c-5 ? r out2 v sup = 12v 1 +25 o c-5 ? notes: 1. parameters listed in table 3 are controlled via design or proc ess parameters and are not directly tested at final production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. measured between 10% and 90% points. 3. quiescent power consumption based upon quiescent supply current test maximum. (no load on outputs.) table 4. electrical test requirements mil-std-883 test requirements subgroups (see table 1) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3 group a test requirements 1, 2, 3 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only. table 3. electrical performance characteristics (continued) device characterized at: v supply = 15v or 12v, r load = 1k ? , c load 10pf, unless otherwise specified. parameters symbol conditions notes temperature limits units min max
6 all intersil u.s. products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com sales office headquarters north america intersil corporation 7585 irvine center drive suite 100 irvine, ca 92618 tel: (949) 341-7000 fax: (949) 341-7123 intersil corporation 2401 palm bay rd. palm bay, fl 32905 tel: (321) 724-7000 fax: (321) 724-7946 europe intersil europe sarl ave. william graisse, 3 1006 lausanne switzerland tel: +41 21 6140560 fax: +41 21 6140579 asia intersil corporation unit 1804 18/f guangdong water building 83 austin road tst, kowloon hong kong tel: +852 2723 6339 fax: +852 2730 1433 ha-5002/883 die characteristics die dimensions: 81 x 80 x 19 mils 1 mils 2050 x 2030 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 20k ? 2k ? glassivation: type: nitride thickness: 7k ? 0.7k ? worst case current density: 0.7 x 10 5 a/cm 2 at 3.6ma substrate potential (powered up): v1- transistor count: 27 process: bipolar dielectric isolation metallization mask layout ha-5002/883 v 1 - in out v 2 + v 1 + (alt) v 1 - (alt) v 2 - v 1 + spec number 511017-883
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