1 power f-mos fets unit: mm 2sk2573 (tentative) silicon n-channel power f-mos fet n features l avalanche energy capacity guaranteed l high-speed switching l low on-resistance l no secondary breakdown n applications l contactless relay l diving circuit for a solenoid l driving circuit for a motor l control equipment l switching power supply 1: gate 2: drain 3: source top-3e package n electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance diode forward voltage input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time fall time turn-off time (delay time) thermal resistance between channel and case thermal resistance between channel and atmosphere symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t on t f t d(off) r th(ch-c) r th(ch-a) conditions v ds = 400v, v gs = 0 v gs = 20v, v ds = 0 i d = 1ma, v gs = 0 v ds = 25v, i d = 1ma v gs = 10v, i d = 10a v ds = 25v, i d = 10a i dr = 20a, v gs = 0 v ds = 20v, v gs = 0, f = 1mhz v dd = 150v, i d = 10a v gs = 10v, r l = 15 w min 500 1 7.2 typ 0.32 12 3000 430 175 150 140 480 max 100 1 5 0.4 - 2.8 1.25 41.67 unit m a m a v v w s v pf pf pf ns ns ns c/w c/w n absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 500 30 20 40 20 100 3 150 - 55 to +150 unit v v a a mj w c c * l = 0.1mh, i l = 20a, 1 pulse 15.50.5 26.50.5 22.00.5 23.4 18.60.5 3.30.3 5.50.3 2.0 0.70.1 2.0 2.0 1.2 10.0 3.00.3 f 3.20.1 4.5 5.450.3 123 5.450.3 1.10.1 2.00.2 4.0 5? 5? 5? 5? 5? 5? 0.70.1
2 power f-mos fets 2sk2573 area of safe operation (aso) p d ? ta ias ? l-load i d ? v gs r ds(on) ? i d c iss , c oss , c rss ? v ds | y fs | ? i d t on , t f , t d(off) ? i d 050 40 10 30 20 0 16 12 4 10 14 8 2 6 v ds =25v t c =25?c drain current i d ( a ) forward transfer admittance |y fs | ( s ) 10 C1 11010 2 10 3 10 C1 10 2 10 1 non repetitive pulse t c =25?c t=1ms 10ms 100ms dc i d i dp drain to source voltage v ds ( v ) drain current i d ( a ) 0 200 50 150 100 10 10000 1000 100 30 300 3000 c iss c oss c rss f=1mhz t c =25?c drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 10 C2 10 C1 110 10 C1 10 2 10 1 e=20mj t c =25?c l-load ( mh ) avalanche current ias ( a ) 010 8 26 4 0 30 25 20 15 10 5 v ds =25v t c =25?c gate to source voltage v gs ( v ) drain current i d ( a ) 0 160 40 120 80 140 20 100 60 0 160 120 40 100 140 80 20 60 p d =3.0w (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (1) (2) (3) ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) 050 40 10 30 20 0 1.2 1.0 0.8 0.6 0.4 0.2 t c =25?c v gs =10v 15v drain current i d ( a ) drain to source on-resistance r ds(on) ( w ) 025 20 515 10 0 800 600 200 500 700 400 100 300 v cc =150 v gs =10v t c =25?c t d(off) t on t f drain current i d ( a ) switching time t on ,t f ,t d(off) ( m s )
3 power f-mos fets 2sk2573 r th(t) ? t 10 C3 10 2 10 C2 1 10 C1 10 10 3 10 C2 10 C1 1 10 10 2 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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